Solution-processed n-type organic thin-film transistors with high field-effect mobility

2005 ◽  
Vol 87 (20) ◽  
pp. 203504 ◽  
Author(s):  
Masayuki Chikamatsu ◽  
Shuichi Nagamatsu ◽  
Yuji Yoshida ◽  
Kazuhiro Saito ◽  
Kiyoshi Yase ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
High Field ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Field Effect Mobility ◽  
Solution Processed

The importance of spinning speed in fabrication of spin-coated organic thin film transistors: Film morphology and field effect mobility

2014 ◽  
Vol 104 (23) ◽  
pp. 233306 ◽  
Author(s):  
Kenji Kotsuki ◽  
Hiroshige Tanaka ◽  
Seiji Obata ◽  
Sven Stauss ◽  
Kazuo Terashima ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Organic Thin Film Transistors ◽  
Film Morphology ◽  
Organic Thin Film ◽  
Field Effect Mobility ◽  
Spinning Speed

Spin-on Polymer Gate Dielectric for High Performance Organic Thin Film Transistors

1999 ◽  
Vol 558 ◽  
Author(s):  
C.D. Sheraw ◽  
D.J. Gundlach ◽  
T.N. Jackson
Keyword(s):  
Thin Film ◽  
Surface Roughness ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Gate Dielectric ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Field Effect Mobility ◽  
Parylene C ◽  
Polymeric Dielectrics

ABSTRACTWe have investigated the polymeric insulators benzocyclobutene (BCB), parylene C and polyimide for use as gate dielectrics in pentacene organic thin film transistors (TFTs). Atomic force microscopy (AFM) was used to examine the surface roughness of the polymeric dielectrics and the morphology of pentacene films deposited onto them. X-ray diffraction was used to examine the molecular ordering of pentacene films deposited onto the polymeric dielectrics. We find a correlation between the surface roughness of the gate dielectric and the grain size in deposited pentacene films, with smooth surfaces yielding larger, more dendritic grains. Despite significant changes in film morphology, pentacene TFTs using BCB, parylene C, or polyimide as the gate dielectric have performance comparable to devices using SiO2 as the gate dielectric. These results suggest that there is not a strong correlation between pentacene film grain size and field-effect mobility for these devices. Pentacene TFTs using BCB as the gate dielectric had field-effect mobility as high as 0.7 cm2/V-s, on/off ratio > 107, subthreshold slope less than 2 V/decade, and negative threshold voltage, making them an attractive candidate for use in organic-based large-area electronic applications on flexible substrates.

Flexible Organic Thin-Film Transistors Fabricated on Polydimethylsiloxane Elastomer Substrates

2015 ◽  
Vol 15 (10) ◽  
pp. 7513-7517 ◽  
Author(s):  
Soon-Won Jung ◽  
Jae Bon Koo ◽  
Chan Woo Park ◽  
Bock Soon Na ◽  
Ji-Young Oh ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Gate Dielectric ◽  
Vinylidene Fluoride ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Field Effect Mobility ◽  
Bending Radius ◽  
Voltage Swing

In this study, we fabricated flexible organic thin-film transistors (OTFTs) on a polydimethysiloxane (PDMS) elastomer substrate using blends of poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] and poly(methyl methacrylate) (PMMA) and amorphous conjugated polymer poly(9,9- dioctylfuorene-co-bithiophene) (F8T2) as the gate dielectric and semiconducting layer, respectively. All the processes were performed at elastomer-compatible temperatures of below 100 °C. We confirmed the basic properties of the P(VDF-TrFE):PMMA blend film on the PDMS substrate, and the characteristics of the fabricated flexible OTFTs were also evaluated. A subthreshold voltage swing of 2.5 V/decade, an Ion/Ioff ratio greater than 105, field-effect mobility of 1.2×10−3 cm2 V−1 s−1, and a 10−11 A gate leakage current were obtained. These characteristics did not degrade at a bending radius of 1 cm. For the OTFTs, the endurable maximum strain without degradation in the field-effect mobility of the PDMS elastomers was approximately 2%.

Temperature Dependence of Field-Effect Mobility in Organic Thin-Film Transistors: Similarity to Inorganic Transistors

2016 ◽  
Vol 16 (4) ◽  
pp. 3219-3222 ◽  
Author(s):  
Jun Okada ◽  
Takashi Nagase ◽  
Takashi Kobayashi ◽  
Hiroyoshi Naito
Keyword(s):  
Thin Film ◽  
Temperature Dependence ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Carrier Transport ◽  
Organic Thin Film Transistors ◽  
Localized States ◽  
Organic Thin Film ◽  
Field Effect Mobility ◽  
Oxide Semiconductors

Carrier transport in solution-processed organic thin-film transistors (OTFTs) based on dioctylben-zothienobenzothiophene (C8-BTBT) has been investigated in a wide temperature range from 296 to 10 K. The field-effect mobility shows thermally activated behavior whose activation energy becomes smaller with decreasing temperature. The temperature dependence of field-effect mobility found in C8-BTBT is similar to that of others materials: organic semiconducting polymers, amorphous oxide semiconductors and hydrogenated amorphous silicon. These results indicate that hopping transport between isoenergetic localized states becomes dominated in a low temperature regime in these materials.

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