scholarly journals Interface studies of well-controlled polymer bilayers and field-effect transistors prepared by a mixed-solvent method

RSC Advances ◽  
2018 ◽  
Vol 8 (21) ◽  
pp. 11272-11279 ◽  
Author(s):  
Fan Zhang ◽  
Yufeng Hu ◽  
Zhidong Lou ◽  
Xige Xin ◽  
Meng Zhang ◽  
...  
Keyword(s):  
Field Effect ◽  
Mixed Solvent ◽  
Field Effect Transistors ◽  
Dielectric Interface ◽  
Solvent Method ◽  
Polymer Bilayers ◽  
Orthogonal Solvent

A mixture of an orthogonal solvent of the bottom polymer and a good solvent of the top polymer is used as the solvent of the top layer to prepare polymer bilayers. The trap densities at the semiconductor/dielectric interface of the corresponding transistor are evaluated.

Quantitative photon-probe evaluation of trap-containing channel/dielectric interface in organic field effect transistors

2010 ◽  
Vol 20 (13) ◽  
pp. 2659 ◽  
Author(s):  
Kimoon Lee ◽  
Byoung H. Lee ◽  
Kwang H. Lee ◽  
Ji Hoon Park ◽  
Myung M. Sung ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Dielectric Interface

Printing Semiconductor-Insulator Polymer Bilayers for High-Performance Coplanar Field-Effect Transistors

2017 ◽  
Vol 30 (2) ◽  
pp. 1704695 ◽  
Author(s):  
Laju Bu ◽  
Mengxing Hu ◽  
Wanlong Lu ◽  
Ziyu Wang ◽  
Guanghao Lu
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Polymer Bilayers

Modification of Semiconductor-Dielectric Interface in Organic Light-emitting Field-effect Transistors

2009 ◽  
Vol 1154 ◽  
Author(s):  
Yan Wang ◽  
Ryotaro Kumashiro ◽  
Naoya Komatsu ◽  
Katsumi Tanigaki
Keyword(s):  
Single Crystal ◽  
Electron Mobility ◽  
Gate Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Hole Mobility ◽  
Light Emitting ◽  
Dielectric Interface ◽  
Crystal Field Effect ◽  
Organic Light

AbstractIn this work, ambipolar rubrene single crystal field-effect transistors (FETs) with PMMA modification layer and Au/Ca as electrodes were fabricated. The electron mobility was studied in these devices. PMMA modification layer on the surface of SiO2 is necessary for electron behavior. We found that the device with PMMA modified insulator and Au-Ca asymmetric metals possessed hole mobility and electron mobility of 1.27 and 0.017 cm−2/Vs, respectively. Furthermore, the shift of light emitting with applied gate voltage was observed in this device.

The role of hybrid dielectric interfaces in improving the performance of multilayer InSe transistors

2020 ◽  
Vol 8 (20) ◽  
pp. 6701-6709
Author(s):  
Shichao Zhang ◽  
Yunfeng Qiu ◽  
Huihui Yang ◽  
Dao Wang ◽  
Yunxia Hu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Device Performance ◽  
Layered Semiconductor ◽  
Dielectric Interface ◽  
Dielectric Interfaces

In graphene-like 2D layered semiconductor-based field-effect transistors (FETs), the device performance is strongly influenced by a semiconductor-dielectric interface.

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