scholarly journals Dielectric interface-dependent spatial charge distribution in ambipolar polymer semiconductors embedded in dual-gate field-effect transistors

2016 ◽  
Vol 109 (4) ◽  
pp. 043301 ◽  
Author(s):  
Jiyoul Lee ◽  
W. S. Christian Roelofs ◽  
Rene A. J. Janssen ◽  
Gerwin H. Gelinck
Keyword(s):  
Charge Distribution ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Dielectric Interface ◽  
Polymer Semiconductors ◽  
Spatial Charge ◽  
Dual Gate

scholarly journals Increasing the noise margin in organic circuits using dual gate field-effect transistors

2008 ◽  
Vol 92 (14) ◽  
pp. 143304 ◽  
Author(s):  
M. Spijkman ◽  
E. C. P. Smits ◽  
P. W. M. Blom ◽  
D. M. de Leeuw ◽  
Y. Bon Saint Côme ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Noise Margin ◽  
Dual Gate

High Performance Organic Field-Effect Transistors and Integrated Inverters

2001 ◽  
Vol 665 ◽  
Author(s):  
A. Ullmann ◽  
J. Ficker ◽  
W. Fix ◽  
H. Rost ◽  
W. Clemens ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Drain Current ◽  
Organic Field Effect Transistors ◽  
Metal Contacts ◽  
Gate Electrodes ◽  
Polymer Semiconductors ◽  
Set Up

ABSTRACTIntegrated plastic circuits (IPCs) will become an integral component of future low cost electronics. For low cost processes IPCs have to be made of all-polymer Transistors. We present our recent results on fabrication of Organic Field-Effect Transistors (OFETs) and integrated inverters. Top-gate transistors were fabricated using polymer semiconductors and insulators. The source-drain structures were defined by standard lithography of Au on a flexible plastic film, and on top of these electrodes, poly(3-alkylthiophene) (P3AT) as semiconductor, and poly(4-hydroxystyrene) (PHS) as insulator were homogeneously deposited by spin-coating. The gate electrodes consist of metal contacts. With this simple set-up, the transistors exhibit excellent electric performance with a high source-drain current at source - drain and gate voltages below 30V. The characteristics show very good saturation behaviour for low biases and are comparable to results published for precursor pentacene. With this setup we obtain a mobility of 0.2cm2/Vs for P3AT. Furthermore, we discuss organic integrated inverters exhibiting logic capability. All devices show shelf-lives of several months without encapsulation.

Hf₀.₅Zr₀.₅O₂ Ferroelectric Embedded Dual-Gate MoS₂ Field Effect Transistors for Memory Merged Logic Applications

2020 ◽  
Vol 41 (10) ◽  
pp. 1600-1603
Author(s):  
Kailiang Huang ◽  
Minglong Zhai ◽  
Xueyuan Liu ◽  
Bing Sun ◽  
Hudong Chang ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Dual Gate
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