Polymer/oxide bilayer dielectric for hysteresis-minimized 1 V operating 2D TMD transistors
By inserting hydroxyl-group free organic dielectric between hydrophilic oxide dielectric and 2D TMD channel, highly stable 2D FETs are achieved. This concept was successfully extended to a practical device application such as stable 1 V operation of 2D MoTe2 FET.
2003 ◽
Vol 2
(1)
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pp. 14
2001 ◽
Vol 73
(2)
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pp. 153
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2020 ◽
Vol 23
(2)
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pp. 111-118
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