scholarly journals l-Alanine capping of ZnO nanorods: increased carrier concentration in ZnO/CuI heterojunction diode

RSC Advances ◽  
2018 ◽  
Vol 8 (10) ◽  
pp. 5350-5361 ◽  
Author(s):  
E. Indubala ◽  
M. Dhanasekar ◽  
V. Sudha ◽  
E. J. Padma Malar ◽  
P. Divya ◽  
...  
Keyword(s):  
Amino Acid ◽  
Carrier Concentration ◽  
Zno Nanorods ◽  
Heterojunction Diode ◽  
Heterojunction Diodes ◽  
Simple Amino Acid

ZnO nanorods were capped with a simple amino acid, viz., l-Alanine to increase the carrier concentration and improve the performance of ZnO/CuI heterojunction diodes.

Selective and Sensitive Ratiometric Detection of Hg(II) Ions Using a Simple Amino Acid Based Sensor

2011 ◽  
Vol 13 (19) ◽  
pp. 5028-5031 ◽  
Author(s):  
Mi-Hwa Yang ◽  
Ponnaboina Thirupathi ◽  
Keun-Hyeung Lee
Keyword(s):  
Amino Acid ◽  
Ratiometric Detection ◽  
Simple Amino Acid

scholarly journals Electrical Characterization of Si/ZnO Nanorod PN Heterojunction Diode

2020 ◽  
Vol 2020 ◽  
pp. 1-9 ◽  
Author(s):  
Sadia Muniza Faraz ◽  
Wakeel Shah ◽  
Naveed Ul Hassan Alvi ◽  
Omer Nur ◽  
Qamar Ul Wahab
Keyword(s):  
Conduction Band ◽  
Zno Nanorods ◽  
Electrical Characterization ◽  
Interface State ◽  
State Density ◽  
Average Height ◽  
Zno Nanorod ◽  
Heterojunction Diode ◽  
Rectification Factor

The electrical characterization of p-Silicon (Si) and n-Zinc oxide (ZnO) nanorod heterojunction diode has been performed. ZnO nanorods were grown on p-Silicon substrate by the aqueous chemical growth (ACG) method. The SEM image revealed high density, vertically aligned hexagonal ZnO nanorods with an average height of about 1.2 μm. Electrical characterization of n-ZnO nanorods/p-Si heterojunction diode was done by current-voltage (I-V), capacitance-voltage (C-V), and conductance-voltage (G-V) measurements at room temperature. The heterojunction exhibited good electrical characteristics with diode-like rectifying behaviour with an ideality factor of 2.7, rectification factor of 52, and barrier height of 0.7 V. Energy band (EB) structure has been studied to investigate the factors responsible for small rectification factor. In order to investigate nonidealities, series resistance and distribution of interface state density (NSS) below the conduction band (CB) were extracted with the help of I-V and C-V and G-V measurements. The series resistances were found to be 0.70, 0.73, and 0.75 KΩ, and density distribution interface states from 8.38 × 1012 to 5.83 × 1011 eV−1 cm−2 were obtained from 0.01 eV to 0.55 eV below the conduction band.

scholarly journals Growth Condition-Oriented Defect Engineering for Changes in Au–ZnO Contact Behavior from Schottky to Ohmic and Vice Versa

Nanomaterials ◽  
2018 ◽  
Vol 8 (12) ◽  
pp. 980 ◽  
Author(s):  
Abu Rana ◽  
Hyun-Seok Kim
Keyword(s):  
Schottky Barrier ◽  
Carrier Concentration ◽  
Carrier Transport ◽  
Defect Density ◽  
High Surface ◽  
Zno Nanorods ◽  
Schottky Contact ◽  
Oxygen Plasma Treatment ◽  
Defect Engineering ◽  
Contact Behavior

ZnO has the built-in characteristics of both ionic and covalent compound semiconductors, which makes the metal–ZnO carrier transport mechanism quite intricate. The growth mechanism-centric change in ZnO defect density and carrier concentration also makes the contact formation and behavior unpredictable. This study investigates the uncertainty in Au–ZnO contact behavior for application-oriented research and the development on ZnO nanostructures. Herein, we explain the phenomenon for how Au–ZnO contact could be rectifying or non-rectifying. Growth method-dependent defect engineering was exploited to explain the change in Schottky barrier heights at the Au–ZnO interface, and the change in device characteristics from Schottky to Ohmic and vice versa. The ZnO nanorods were fabricated via aqueous chemical growth (ACG) and microwave-assisted growth (MAG) methods. For further investigations, one ACG sample was doped with Ga, and another was subjected to oxygen plasma treatment (OPT). The ACG and Ga-doped ACG samples showed a quasi-Ohmic and Ohmic behavior, respectively, because of a high surface and subsurface level donor defect-centric Schottky barrier pinning at the Au–ZnO interface. However, the ACG-OPT and MAG samples showed a more pronounced Schottky contact because of the presence of low defect-centric carrier concentration via MAG, and the removal of the surface accumulation layer via the OPT process.

Insertion of oximic and hydroxamic functions into one simple amino acid creates a new family of powerful chelating agents

1998 ◽  
pp. 1089-1090 ◽  
Author(s):  
Agnieszka Dobosz ◽  
Igor O. Fritsky ◽  
Aldona Karaczyn ◽  
Henryk Kozłowski ◽  
Tatiana Yu. Sliva ◽  
...  
Keyword(s):  
Amino Acid ◽  
Chelating Agents ◽  
New Family ◽  
Simple Amino Acid

scholarly journals Effect of Annealing Atmosphere on the Diode Behaviour of ZnO/Si Heterojunction

2021 ◽  
Author(s):  
Sadia Muniza Faraz ◽  
Syed Riaz un Nabi Jafri ◽  
Zarreen Tajvar ◽  
Naveed ul Hassan Alvi ◽  
Qamar-ul Wahab ◽  
...  
Keyword(s):  
Ideality Factor ◽  
Room Temperature ◽  
Series Resistance ◽  
Zno Nanorods ◽  
Annealing Atmosphere ◽  
Electrical Characteristics ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Growth Method ◽  
Heterojunction Diodes

The effect of thermal annealing atmosphere on the electrical characteristics of Zinc oxide (ZnO) nanorods/p-Silicon (Si) diodes is investigated. ZnO nanorods are grown by low-temperature aqueous solution growth method and annealed in Nitrogen and Oxygen atmosphere. As-grown and annealed nanorods are studied by scanning electron microscopy (SEM) and photoluminescence (PL) spectroscopy. Electrical characteristics of ZnO/Si heterojunction diodes are studied by current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature. Improvements in rectifying behaviour, ideality factor, carrier concentration, and series resistance are observed after annealing. The ideality factor of 4.4 for as-grown improved to 3.8 and for Nitrogen and Oxygen annealed improved to 3.5 nanorods diodes. The series resistances decreased from 1.6 to 1.8 times after annealing. An overall improved behaviour is observed for oxygen annealed heterojunction diodes. The study suggests that by controlling the ZnO nanorods annealing temperatures and atmospheres the electronic and optoelectronic properties of ZnO devices can be improved.

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