An all-in-one memory cell based on a homopolymer with a pyrene side chain and its volatile and nonvolatile resistive switch behaviors

2018 ◽  
Vol 9 (9) ◽  
pp. 1139-1146 ◽  
Author(s):  
Hongliang Wang ◽  
Feng Zhou ◽  
Linxin Wu ◽  
Xiong Xiao ◽  
Pei-Yang Gu ◽  
...  
Keyword(s):  
Memory Cell ◽  
Side Chain ◽  
Memory Devices ◽  
Resistive Switch

Memory devices based on PMPPE exhibit a rewritable ternary memory behaviour (0, 1, 2, three conductivity states).

scholarly journals Novel Conjugated Side Chain Fluorinated Polymers Based on Fluorene for Light‐Emitting and Ternary Flash Memory Devices

ChemistryOpen ◽  
2019 ◽  
Vol 8 (10) ◽  
pp. 1267-1275 ◽  
Author(s):  
Qian Zhang ◽  
Dongge Ma ◽  
Dianzhong Wen ◽  
Cheng Wang ◽  
Xuduo Bai ◽  
...  
Keyword(s):  
Flash Memory ◽  
Side Chain ◽  
Memory Devices ◽  
Fluorinated Polymers ◽  
Light Emitting

A Leakage Current Model for “Flash-like”, Non-Volatile Resistive Switch Memory Cell

2005 ◽  
Vol 889 ◽  
Author(s):  
Herbert Schroeder
Keyword(s):  
Leakage Current ◽  
Current Model ◽  
Thermionic Emission ◽  
Memory Cell ◽  
Wide Band ◽  
Metallic Ions ◽  
Carrier Injection ◽  
Resistive Switch ◽  
Metal Insulator Metal ◽  
Switch Memory

ABSTRACTAn advanced leakage current model combining the electronic carrier injection /ejection at the electrode interfaces (described by thermionic emission) with the film conduction properties of a thin dielectric film (modelled as wide band gap semiconductor) is used to describe the current-voltage (I-V) curve of a flash-like resistive switch memory cell. Such a cell consists of a metal-insulator-metal capacitor structure with some embedded charge storage elements within the dielectric, e.g. a floating electrode (like in the gate of a “Flash”) or some metallic ions or clusters, which can be charged or discharged by an applied voltage or current. The resulting different conductance levels can be used for a resistive switching memory cell. This contribution presents calculated simulation results on I-V curves in dependence on polarity and concentration of the stored charge as well as on other parameters such as dielectric constant, background homogeneous defect densities in the dielectric and electrode properties. These parameters show a large influence on the switching ratio S = R(high) / R(low), an important parameter for the application in a device.

Two-terminal resistive switching memory devices with a polymer film embedded with nanoparticles

2015 ◽  
Vol 3 (28) ◽  
pp. 7243-7261 ◽  
Author(s):  
Jianyong Ouyang
Keyword(s):  
Polymer Film ◽  
Resistive Switching ◽  
Memory Devices ◽  
Resistive Switch ◽  
Resistive Switching Memory ◽  
Switching Memory

This article reviews the recent development of resistive switch devices with a polymer film blended with nanoparticles.

Nonvolatile memory devices based on polyimides bearing noncoplanar twisted biphenyl units containing carbazole and triphenylamine side-chain groups

2011 ◽  
Vol 21 (39) ◽  
pp. 15643 ◽  
Author(s):  
Yue-Qin Li ◽  
Run-Chen Fang ◽  
An-Min Zheng ◽  
Yue-Ying Chu ◽  
Xian Tao ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
Side Chain ◽  
Memory Devices ◽  
Nonvolatile Memory Devices

Pyrene-Incorporated Side Chain in π-Conjugated Polymers for Non-Volatile Transistor-Type Memory Devices with Improved Stretchability

2021 ◽  
Vol 3 (4) ◽  
pp. 2109-2119
Author(s):  
Yan-Cheng Lin ◽  
Chih-Chien Hung ◽  
Chun-Kai Chen ◽  
Yun-Chi Chiang ◽  
Li-Che Hsu ◽  
...  
Keyword(s):  
Conjugated Polymers ◽  
Side Chain ◽  
Memory Devices

Design and synthesis of conjugated polymers containing Pt(ii) complexes in the side-chain and their application in polymer memory devices

2012 ◽  
Vol 22 (19) ◽  
pp. 9576 ◽  
Author(s):  
Peng Wang ◽  
Shu-Juan Liu ◽  
Zhen-Hua Lin ◽  
Xiao-Chen Dong ◽  
Qiang Zhao ◽  
...  
Keyword(s):  
Conjugated Polymers ◽  
Side Chain ◽  
Memory Devices ◽  
Design And Synthesis ◽  
Polymer Memory

A new CML memory cell for high density memory devices

1979 ◽  
Author(s):  
M. Sekine ◽  
S. Sinozaki ◽  
A. Menjo ◽  
S. Saito
Keyword(s):  
Memory Cell ◽  
High Density ◽  
Memory Devices

WORM memory devices based on conformation change of a PVK derivative with a rigid spacer in side chain

2010 ◽  
Vol 123 (2-3) ◽  
pp. 685-689 ◽  
Author(s):  
Yuanhua Liu ◽  
Najun Li ◽  
Xuewei Xia ◽  
Qingfeng Xu ◽  
Jianfeng Ge ◽  
...  
Keyword(s):  
Side Chain ◽  
Memory Devices ◽  
Conformation Change ◽  
Rigid Spacer
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