Large-area niobium disulfide thin films as transparent electrodes for devices based on two-dimensional materials

Nanoscale ◽  
2018 ◽  
Vol 10 (3) ◽  
pp. 1056-1062 ◽  
Author(s):  
Hunyoung Bark ◽  
Yongsuk Choi ◽  
Jaehyuck Jung ◽  
Jung Hwa Kim ◽  
Hyukjoon Kwon ◽  
...  
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Two Dimensional ◽  
Deposition Method ◽  
Transparent Electrodes ◽  
Large Area ◽  
Two Dimensional Materials ◽  
Niobium Disulfide

Large-area NbS2 films have been synthesized by using the chemical vapor deposition method and exhibited their potential as transparent electrodes for 2D semiconductor devices.

scholarly journals Thermodynamics Controlled Sharp Transformation from InP to GaP Nanowires via Introducing Trace Amount of Gallium

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Zhenzhen Tian ◽  
Xiaoming Yuan ◽  
Ziran Zhang ◽  
Wuao Jia ◽  
Jian Zhou ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Driving Force ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Nanowire Growth ◽  
Calphad Approach ◽  
Deposition Method ◽  
Large Area ◽  
Growth Phenomenon

AbstractGrowth of high-quality III–V nanowires at a low cost for optoelectronic and electronic applications is a long-term pursuit of research. Still, controlled synthesis of III–V nanowires using chemical vapor deposition method is challenge and lack theory guidance. Here, we show the growth of InP and GaP nanowires in a large area with a high density using a vacuum chemical vapor deposition method. It is revealed that high growth temperature is required to avoid oxide formation and increase the crystal purity of InP nanowires. Introduction of a small amount of Ga into the reactor leads to the formation of GaP nanowires instead of ternary InGaP nanowires. Thermodynamic calculation within the calculation of phase diagrams (CALPHAD) approach is applied to explain this novel growth phenomenon. Composition and driving force calculations of the solidification process demonstrate that only 1 at.% of Ga in the catalyst is enough to tune the nanowire formation from InP to GaP, since GaP nucleation shows a much larger driving force. The combined thermodynamic studies together with III–V nanowire growth studies provide an excellent example to guide the nanowire growth.

Fabrication of PTFE thin films by dual catalytic chemical vapor deposition method

2008 ◽  
Vol 516 (5) ◽  
pp. 687-690 ◽  
Author(s):  
Hiroaki Yasuoka ◽  
Masahiro Yoshida ◽  
Ken Sugita ◽  
Keisuke Ohdaira ◽  
Hideyuki Murata ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Deposition Method ◽  
Catalytic Chemical Vapor Deposition
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