Vertical charge transport through transition metal dichalcogenides – a quantitative analysis

Nanoscale ◽  
2017 ◽  
Vol 9 (48) ◽  
pp. 19108-19113 ◽  
Author(s):  
Yuqi Zhu ◽  
Ruiping Zhou ◽  
Feng Zhang ◽  
Joerg Appenzeller

Effective mass in the vertical direction of MoS2 and WSe2 has been extracted for the first time.

Author(s):  
Sai Manoj Gali ◽  
David Beljonne

Transition Metal Dichalcogenides (TMDCs) are emerging as promising two-dimensional (2D) materials. Yet, TMDCs are prone to inherent defects such as chalcogen vacancies, which are detrimental to charge transport. Passivation of...


Nanoscale ◽  
2018 ◽  
Vol 10 (42) ◽  
pp. 19906-19915 ◽  
Author(s):  
Li Yang ◽  
Hao Wu ◽  
Wenfeng Zhang ◽  
Zhenhua Chen ◽  
Jie Li ◽  
...  

The instability concern for molybdenum- and tungsten-based transition-metal dichalcogenides (TMDCs) was clarified by anomalous oxidation dynamics and impact on electrical transport properties for the first time.


2020 ◽  
Vol 12 (31) ◽  
pp. 35337-35344
Author(s):  
Baojun Pan ◽  
Kenan Zhang ◽  
Changchun Ding ◽  
Zhen Wu ◽  
Qunchao Fan ◽  
...  

2021 ◽  
Author(s):  
Xin Tang ◽  
Han Ye ◽  
Wenjun Liu ◽  
Yumin Liu ◽  
Zhenlin Guo ◽  
...  

Janus transition metal dichalcogenides with unique physical properties have attracted increasing research interest for their energy and catalytic applications recently. In this paper, we first time investigate the lithiation behavior...


1996 ◽  
Vol 441 ◽  
Author(s):  
S. Tiefenbacher ◽  
C. Pettenkofer ◽  
W. Jaegermann

AbstractEpitaxial WS2 films have been grown on MoTe2 (0001) van der Waals faces using W(CO)6 and SnS2 as precursors. Despite a lattice mismatch of 10.3 % the film shows high crystalline quality. The interface is atomically abrupt and shows no interface dangling bonds as deduced from photoemission results (XPS, UPS). The growing overlayer nucleates on the flat (0001) terraces and not on steps as suggested from STM-measurements. For thin epilayers Moiré superstructures in LEED have been measured for the first time in semiconductor heteroepitaxy. From the intensity variation of the LEED spots with energy a corrugation of the overlayer film can be deduced. Based on these results a mechanism of van der Waals epitaxy is suggested.


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