scholarly journals Transparent amorphous strontium titanate resistive memories with transient photo-response

Nanoscale ◽  
2017 ◽  
Vol 9 (38) ◽  
pp. 14690-14702 ◽  
Author(s):  
Taimur Ahmed ◽  
Sumeet Walia ◽  
Jeeson Kim ◽  
Hussein Nili ◽  
Rajesh Ramanathan ◽  
...  
Keyword(s):  
Strontium Titanate ◽  
Transient Response ◽  
Oxygen Vacancies ◽  
Conductive Filament ◽  
Photo Response ◽  
Optical Excitations ◽  
Evolution Of Oxygen

Highly transparent SrTiO3 resistive memories with transient response to optical excitations are demonstrated and the evolution of oxygen vacancies with the location of a conductive filament is optically mapped.

scholarly journals Oxygen vacancies in strontium titanate: A DFT+DMFT study

2021 ◽  
Vol 3 (2) ◽  
Author(s):  
Jaime Souto-Casares ◽  
Nicola A. Spaldin ◽  
Claude Ederer
Keyword(s):  
Strontium Titanate ◽  
Oxygen Vacancies

scholarly journals Dynamics of oxygen vacancies in strontium titanate

2015 ◽  
Vol 71 (a1) ◽  
pp. s64-s64
Author(s):  
M. Zschornak ◽  
J. Hanzig ◽  
H. Stöcker ◽  
C. Richter ◽  
M. Nentwich ◽  
...  
Keyword(s):  
Strontium Titanate ◽  
Oxygen Vacancies

scholarly journals Effect of thermochemical treatments on laser-induced luminescence spectra from strontium titanate: comparison with swift ion-beam irradiation experiments

2021 ◽  
Vol 75 (12) ◽  
Author(s):  
M. L. Crespillo ◽  
J. T. Graham ◽  
F. Agulló-López ◽  
Y. Zhang ◽  
W. J. Weber
Keyword(s):  
Strontium Titanate ◽  
Oxygen Vacancies ◽  
Ion Beam ◽  
Energy Levels ◽  
Electronic Energy ◽  
Luminescence Spectra ◽  
Optical Transitions ◽  
Beam Irradiation ◽  
Ion Beam Irradiation ◽  
Reducing Atmosphere

AbstractResults recently reported on the effect of thermochemical treatments on the (He-Cd) laser-excited emission spectra of strontium titanate (STO) are re-analyzed here and compared with results obtained under ion-beam irradiation. Contributing bands centered at 2.4 eV and 2.8 eV, which appear under laser excitation, present intensities dependent upon previous thermal treatments in oxidizing (O2) or reducing atmosphere (H2). As a key result, the emission band centered at 2.8 eV is clearly enhanced in samples exposed to a reducing atmosphere. From a comparison with the ionoluminescence data, it is concluded that the laser-excited experiments can be rationalized within a framework developed from ion-beam excitation studies. In particular, the band at 2.8 eV, sometimes attributed to oxygen vacancies, behaves as expected for optical transitions from conduction-band (CB) states to the ground state level of the self-trapped exciton center. The band at 2.0 eV reported in ion-beam irradiated STO, and attributed to oxygen vacancies, is not observed in laser-excited crystals. As a consequence of our analysis, a consistent scheme of electronic energy levels and optical transitions can now be reliably offered for strontium titanate. Graphical abstract

Hydroxyl-Dependent Evolution of Oxygen Vacancies Enables the Regeneration of BiOCl Photocatalyst

2017 ◽  
Vol 9 (19) ◽  
pp. 16620-16626 ◽  
Author(s):  
Sujuan Wu ◽  
Jiawei Xiong ◽  
Jianguo Sun ◽  
Zachary D. Hood ◽  
Wen Zeng ◽  
...  
Keyword(s):  
Oxygen Vacancies ◽  
Evolution Of Oxygen

scholarly journals Effect of oxygen vacancies on intrinsic dielectric permittivity of strontium titanate ceramics

2018 ◽  
Vol 126 (5) ◽  
pp. 263-268 ◽  
Author(s):  
Takuya HOSHINA ◽  
Ryuichi SASE ◽  
Junji NISHIYAMA ◽  
Hiroaki TAKEDA ◽  
Takaaki TSURUMI
Keyword(s):  
Dielectric Permittivity ◽  
Strontium Titanate ◽  
Oxygen Vacancies ◽  
Effect Of Oxygen ◽  
Titanate Ceramics

First-principles investigation of the conductive filament configuration in rutile TiO2-x ReRAM

2012 ◽  
Vol 1430 ◽  
Author(s):  
Liang Zhao ◽  
Seong-Geon Park ◽  
Blanka Magyari-Köpe ◽  
Yoshio Nishi
Keyword(s):  
High Resistance ◽  
First Principles ◽  
Electronic Structures ◽  
Density Functional ◽  
Oxygen Vacancies ◽  
Conductive Filament ◽  
Low Resistance ◽  
Vacancy Ordering ◽  
Calculation Results ◽  
Resistance State

ABSTRACTThe interactions and ordering of oxygen vacancies in rutile TiO2 were thoroughly investigated by density functional calculations to search for atomic configurations of the conductive filament. As random isolated vacancies could not support the low-resistance state conduction in TiO2 ReRAM, vacancy ordering was introduced in [110] and [001] directions of the lattice to study the electronic structures. The calculation results revealed that a di-vacancy chain in [001] direction makes the electrons delocalized in that direction, which is identified as a possible configuration of the conductive filament. This low-resistance state can be effectively disrupted by moving oxygen vacancies out of the filament to reach high-resistance states.

scholarly journals Evolution of the conductive filament system in HfO2-based memristors observed by direct atomic-scale imaging

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Ying Zhang ◽  
Ge-Qi Mao ◽  
Xiaolong Zhao ◽  
Yu Li ◽  
Meiyun Zhang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Atomic Scale ◽  
Core Shell ◽  
Conductive Filament ◽  
Dynamic Changes ◽  
Filament System ◽  
Transmission Electron ◽  
Composition And Structure ◽  
Memory Applications

AbstractThe resistive switching effect in memristors typically stems from the formation and rupture of localized conductive filament paths, and HfO2 has been accepted as one of the most promising resistive switching materials. However, the dynamic changes in the resistive switching process, including the composition and structure of conductive filaments, and especially the evolution of conductive filament surroundings, remain controversial in HfO2-based memristors. Here, the conductive filament system in the amorphous HfO2-based memristors with various top electrodes is revealed to be with a quasi-core-shell structure consisting of metallic hexagonal-Hf6O and its crystalline surroundings (monoclinic or tetragonal HfOx). The phase of the HfOx shell varies with the oxygen reservation capability of the top electrode. According to extensive high-resolution transmission electron microscopy observations and ab initio calculations, the phase transition of the conductive filament shell between monoclinic and tetragonal HfO2 is proposed to depend on the comprehensive effects of Joule heat from the conductive filament current and the concentration of oxygen vacancies. The quasi-core-shell conductive filament system with an intrinsic barrier, which prohibits conductive filament oxidation, ensures the extreme scalability of resistive switching memristors. This study renovates the understanding of the conductive filament evolution in HfO2-based memristors and provides potential inspirations to improve oxide memristors for nonvolatile storage-class memory applications.

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