2017 47th European Solid-State Device Research Conference (ESSDERC)
Latest Publications

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Published By IEEE

9781509059782

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Modeling of dynamic trap density increase for aging simulation of any MOSFET circuits

2017 47th European Solid-State Device Research Conference (ESSDERC) ◽

10.1109/essderc.2017.8066624 ◽

2017 ◽

Cited By ~ 1

Author(s):

M. Miura-Mattausch ◽

H. Miyamoto ◽

H. Kikuchihara ◽

D. Navarro ◽

T. K. Maiti ◽

...

Keyword(s):

Density Increase ◽

Trap Density

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Ultrathin lateral unidirectional bipolar-type insulated-gate transistor as pH sensor

2017 47th European Solid-State Device Research Conference (ESSDERC) ◽

10.1109/essderc.2017.8066643 ◽

2017 ◽

Author(s):

Qinghua Han ◽

Anran Gao ◽

Keyvan Narimani ◽

Yuelin Wang ◽

Tie Li ◽

...

Keyword(s):

Ph Sensor ◽

Bipolar Type

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Radical oxidation process for hybrid SAM/HfOx gate dielectrics in MoS2 FETs

2017 47th European Solid-State Device Research Conference (ESSDERC) ◽

10.1109/essderc.2017.8066605 ◽

2017 ◽

Author(s):

Takamasa Kawanago ◽

Ryo Ikoma ◽

Tomoaki Oba ◽

Hiroyuki Takagi

Keyword(s):

Oxidation Process ◽

Gate Dielectrics ◽

Radical Oxidation

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Anti-ferroelectric ZrO2, an enabler for low power non-volatile 1T-1C and 1T random access memories

2017 47th European Solid-State Device Research Conference (ESSDERC) ◽

10.1109/essderc.2017.8066616 ◽

2017 ◽

Cited By ~ 4

Author(s):

M. Pesic ◽

M. Hoffmann ◽

C. Richter ◽

S. Slesazeck ◽

T. Kampfe ◽

...

Keyword(s):

Low Power ◽

Random Access

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A novel approach for scalable sensor arrays using cantilever field-effect transistors

2017 47th European Solid-State Device Research Conference (ESSDERC) ◽

10.1109/essderc.2017.8066644 ◽

2017 ◽

Author(s):

Andreas Hessel ◽

Stefan Scholz ◽

Alexander Pelger ◽

Albert Pfander ◽

Joachim Knoch

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Sensor Arrays ◽

Novel Approach

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Random telegraph signal noise in tunneling field-effect transistors with S below 60 mV/decade

2017 47th European Solid-State Device Research Conference (ESSDERC) ◽

10.1109/essderc.2017.8066586 ◽

2017 ◽

Author(s):

Markus Hellenbrand ◽

Elvedin Memisevic ◽

Johannes Svensson ◽

Erik Lind ◽

Lars-Erik Wernersson

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Random Telegraph Signal ◽

Signal Noise ◽

Tunneling Field Effect Transistors

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Hybrid InGaAs/SiGe CMOS circuits with 2D and 3D monolithic integration

2017 47th European Solid-State Device Research Conference (ESSDERC) ◽

10.1109/essderc.2017.8066637 ◽

2017 ◽

Author(s):

V. Deshpande ◽

H. Hahn ◽

V. Djara ◽

E. O'Connor ◽

D. Caimi ◽

...

Keyword(s):

Monolithic Integration ◽

Cmos Circuits ◽

2D And 3D

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Nanometer CMOS characterization and compact modeling at deep-cryogenic temperatures

2017 47th European Solid-State Device Research Conference (ESSDERC) ◽

10.1109/essderc.2017.8066591 ◽

2017 ◽

Cited By ~ 7

Author(s):

R. M. Incandela ◽

L. Song ◽

H.A.R. Homulle ◽

F. Sebastiano ◽

E. Charbon ◽

...

Keyword(s):

Compact Modeling ◽

Cryogenic Temperatures ◽

Nanometer Cmos

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On the understanding of cathode related trapping effects in GaN-on-Si Schottky diodes

2017 47th European Solid-State Device Research Conference (ESSDERC) ◽

10.1109/essderc.2017.8066608 ◽

2017 ◽

Author(s):

W. Vandendaele ◽

T. Lorin ◽

R. Gwoziecki ◽

Y. Baines ◽

J. Biscarrat ◽

...

Keyword(s):

Schottky Diodes ◽

Gan On Si ◽

Trapping Effects

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Single event effects and total ionising dose in 600V Si-on-SiC LDMOS transistors for rad-hard space applications

2017 47th European Solid-State Device Research Conference (ESSDERC) ◽

10.1109/essderc.2017.8066635 ◽

2017 ◽

Cited By ~ 1

Author(s):

K. Ben Ali ◽

P. M. Gammon ◽

C. W. Chan ◽

F. Li ◽

V. Pathirana ◽

...

Keyword(s):

Single Event ◽

Space Applications ◽

Single Event Effects

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2017 47th European Solid-State Device Research Conference (ESSDERC)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Modeling of dynamic trap density increase for aging simulation of any MOSFET circuits

Ultrathin lateral unidirectional bipolar-type insulated-gate transistor as pH sensor

Radical oxidation process for hybrid SAM/HfOx gate dielectrics in MoS2 FETs

Anti-ferroelectric ZrO2, an enabler for low power non-volatile 1T-1C and 1T random access memories

A novel approach for scalable sensor arrays using cantilever field-effect transistors

Random telegraph signal noise in tunneling field-effect transistors with S below 60 mV/decade

Hybrid InGaAs/SiGe CMOS circuits with 2D and 3D monolithic integration

Nanometer CMOS characterization and compact modeling at deep-cryogenic temperatures

On the understanding of cathode related trapping effects in GaN-on-Si Schottky diodes

Single event effects and total ionising dose in 600V Si-on-SiC LDMOS transistors for rad-hard space applications

2017 47th European Solid-State Device Research Conference (ESSDERC)
Latest Publications