Prediction of the Current-Voltage Characteristics and the Bipolar Resistive Switching Mechanism in Polymer-Based Sandwiched Structures

2019 ◽  
Vol 75 (5) ◽  
pp. 409-414 ◽  
Author(s):  
Muhammad Naeem Awais ◽  
Muhammad Naeem Shehzad
Keyword(s):  
Resistive Switching ◽  
Bipolar Resistive Switching ◽  
Switching Mechanism ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Resistive Switching Mechanism

Poly-NiO/Nb:SrTiO3 Based Resistive Switching Device for Nonvolatile Random Access Memory

2012 ◽  
Vol 605-607 ◽  
pp. 1944-1947
Author(s):  
Cheng Hu ◽  
Yong Dan Zhu
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Carrier Injection ◽  
Forming Process ◽  
Switching Characteristic ◽  
Bipolar Resistive Switching ◽  
Retention Characteristic ◽  
Injection Process ◽  
Current Voltage ◽  
Current Voltage Characteristics

The bipolar resistive switching characteristic of Ag/poly-NiO/Nb:SrTiO3/In device has been investigated in this letter. The current-voltage characteristics of the device shows reproducible and pronounced bipolar resistive switching after 2V forming process and the resistive switching ratio RHRS/RLRS can reach 104 at the read voltage -0.5V. Multilevel memories can be realized by changing the max reverse voltages and show well retention characteristic even after several sweeping cycles. The results have been discussed in terms of carrier injection process via defects at the interface of the poly-NiO and Nb:SrTiO3.

A flexible organic memory device with a clearly disclosed resistive switching mechanism

2019 ◽  
Vol 64 ◽  
pp. 209-215 ◽  
Author(s):  
Giulia Casula ◽  
Yan Busby ◽  
Alexis Franquet ◽  
Valentina Spampinato ◽  
Laurent Houssiau ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Memory Device ◽  
Organic Memory ◽  
Switching Mechanism ◽  
Organic Memory Device ◽  
Resistive Switching Mechanism

Using post-breakdown conduction study in a MIS structure to better understand the resistive switching mechanism in an MIM stack

2011 ◽  
Vol 22 (45) ◽  
pp. 455702 ◽  
Author(s):  
Xing Wu ◽  
Kin-Leong Pey ◽  
Nagarajan Raghavan ◽  
Wen-Hu Liu ◽  
Xiang Li ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Mis Structure ◽  
Switching Mechanism ◽  
Resistive Switching Mechanism

Characterization of interfacial barrier charging as a resistive switching mechanism in Ag/Sb2Te3/Ag heterojunctions

2018 ◽  
Vol 20 (27) ◽  
pp. 18200-18206 ◽  
Author(s):  
Xinran Cao ◽  
Caimin Meng ◽  
Jing Li ◽  
Jun Wang ◽  
Yafei Yuan ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Switching Mechanism ◽  
Multilevel Memory ◽  
Resistive Switching Mechanism

The memristive nature of Ag/Sb2Te3/Ag heterostructural cells was systematically characterized and potentially extended to a novel multilevel memory concept.

scholarly journals Biomaterial-Induced Stable Resistive Switching Mechanism in TiO2 Thin Films: The Role of Active Interstitial Sites/Ions in Minimum Current Leakage and Superior Bioactivity

ACS Omega ◽  
2020 ◽  
Vol 5 (30) ◽  
pp. 19050-19060
Author(s):  
Misbah Sehar Abbasi ◽  
Muhammad Sultan Irshad ◽  
Naila Arshad ◽  
Iftikhar Ahmed ◽  
Muhammad Idrees ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Tio2 Thin Films ◽  
Current Leakage ◽  
Switching Mechanism ◽  
Resistive Switching Mechanism

scholarly journals Improved Stability and Controllability in ZrN-Based Resistive Memory Device by Inserting TiO2 Layer

Micromachines ◽  
2020 ◽  
Vol 11 (10) ◽  
pp. 905
Author(s):  
Junhyeok Choi ◽  
Sungjun Kim
Keyword(s):  
Data Storage ◽  
Resistive Switching ◽  
Memory Device ◽  
Comparison Study ◽  
Tio2 Layer ◽  
Bipolar Resistive Switching ◽  
Resistive Switching Memory ◽  
Current Voltage ◽  
Improved Stability ◽  
Switching Characteristics

In this work, the enhanced resistive switching of ZrN-based resistive switching memory is demonstrated by embedding TiO2 layer between Ag top electrode and ZrN switching layer. The Ag/ZrN/n-Si device exhibits unstable resistive switching as a result of the uncontrollable Ag migration. Both unipolar and bipolar resistive switching with high RESET current were observed. Negative-SET behavior in the Ag/ZrN/n-Si device makes set-stuck, causing permanent resistive switching failure. On the other hand, the analogue switching in the Ag/TiO2/ZrN/n-Si device, which could be adopted for the multi-bit data storage applications, is obtained. The gradual switching in Ag/TiO2/ZrN/n-Si device is achieved, possibly due to the suppressed Ag diffusion caused by TiO2 inserting layer. The current–voltage (I–V) switching characteristics of Ag/ZrN/n-Si and Ag/TiO2/ZrN/n-Si devices can be well verified by pulse transient. Finally, we established that the Ag/TiO2/ZrN/n-Si device is suitable for neuromorphic application through a comparison study of conductance update. This paper paves the way for neuromorphic application in nitride-based memristor devices.

scholarly journals Effects of top electrode material in hafnium-oxide-based memristive systems on highly-doped Si

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Sueda Saylan ◽  
Haila M. Aldosari ◽  
Khaled Humood ◽  
Maguy Abi Jaoude ◽  
Florent Ravaux ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Hafnium Oxide ◽  
Complementary Metal Oxide Semiconductor ◽  
Differential Resistance ◽  
Oxide Semiconductor ◽  
Bipolar Resistive Switching ◽  
Current Voltage ◽  
Device Structures ◽  
Memristive Systems ◽  
P Type

Abstract This work provides useful insights into the development of HfO2-based memristive systems with a p-type silicon bottom electrode that are compatible with the complementary metal–oxide–semiconductor technology. The results obtained reveal the importance of the top electrode selection to achieve unique device characteristics. The Ag/HfO2/Si devices have exhibited a larger memory window and self-compliance characteristics. On the other hand, the Au/HfO2/Si devices have displayed substantial cycle-to-cycle variation in the ON-state conductance. These device characteristics can be used as an indicator for the design of resistive-switching devices in various scenes such as, memory, security, and sensing. The current–voltage (I–V) characteristics of Ag/HfO2/Si and Au/HfO2/Si devices under positive and negative bias conditions have provided valuable information on the ON and OFF states of the devices and the underlying resistive switching mechanisms. Repeatable, low-power, and forming-free bipolar resistive switching is obtained with both device structures, with the Au/HfO2/Si devices displaying a poorer device-to-device reproducibility. Furthermore, the Au/HfO2/Si devices have exhibited N-type negative differential resistance (NDR), suggesting Joule-heating activated migration of oxygen vacancies to be responsible for the SET process in the unstable unipolar mode.

Research on resistive switching mechanism of multi-filaments formation/rupture in nickel oxide thin films

2017 ◽  
Vol 201 ◽  
pp. 169-172 ◽  
Author(s):  
Yuxiang Luo ◽  
Sipei Shao ◽  
Huijun Hu ◽  
Jingjing Li ◽  
Jingshi Shen ◽  
...  
Keyword(s):  
Thin Films ◽  
Nickel Oxide ◽  
Resistive Switching ◽  
Oxide Thin Films ◽  
Switching Mechanism ◽  
Resistive Switching Mechanism ◽  
Nickel Oxide Thin Films
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