Geometric and electronic structure of multilayered graphene: synergy of the nondirective ripples and the number of layers

2018 ◽  
Vol 20 (4) ◽  
pp. 2230-2237 ◽  
Author(s):  
Ting Ting Cui ◽  
Jian Chen Li ◽  
Wang Gao ◽  
Qing Jiang
Keyword(s):  
Electronic Structure ◽  
Electronic Properties ◽  
Two Dimensional ◽  
Free Standing ◽  
Number Of Layers

According to the Mermin–Wagner theorem, ripple deformation is ubiquitous in a two-dimensional (2D) free-standing sheet, influencing the electronic properties.

SEMICONDUCTING GRAPHENE

Nano LIFE ◽  
2012 ◽  
Vol 02 (03) ◽  
pp. 1230009 ◽  
Author(s):  
PRASHANT P. SHINDE ◽  
VIJAY KUMAR
Keyword(s):  
Electronic Structure ◽  
Band Gap ◽  
Electronic Properties ◽  
Dirac Point ◽  
Physical Mechanism ◽  
Two Dimensional

This article reviews the fundamental aspects of the electronic structure of two-dimensional graphene and modification of the electronic structure at the Dirac point in order to create a band gap. We discuss how the states near the Dirac point are affected by confinement, adsorption and interaction with a substrate. The physical mechanism for controlling the electronic properties of graphene by BN doping is discussed in detail and this looks like a promising way for making semiconducting graphene for applications.

scholarly journals Spontaneous doping of two-dimensional NaCl films with Cr atoms: aggregation and electronic structure

Nanoscale ◽  
2015 ◽  
Vol 7 (6) ◽  
pp. 2366-2373 ◽  
Author(s):  
Zhe Li ◽  
Hsin-Yi Tiffany Chen ◽  
Koen Schouteden ◽  
Ewald Janssens ◽  
Chris Van Haesendonck ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Work Function ◽  
Electronic Properties ◽  
Two Dimensional

Upon deposition of Cr atoms on ultrathin NaCl/Au(111) films they form substituting dopants either replacing Na or Cl ions, thereby changing the electronic properties of the film and in particular the work function.

scholarly journals Effect of Substrate on Structural and Electronic Properties of Au-Pd, Au-Pt and Au-Ag Atomic Chains

2020 ◽  
pp. 7-18
Author(s):  
Mudra R. Dave ◽  
A. C. Sharma
Keyword(s):  
Electronic Structure ◽  
Electronic Properties ◽  
Magnetic Moment ◽  
Ground State ◽  
Substrate Effect ◽  
Free Standing ◽  
Cu Substrate ◽  
Structural And Electronic Properties ◽  
Atomic Chains

We report structure and electronic properties of Au-Pd, Au-Pt and Au-Ag bimetallic atomic chains absorbed on NiAl(110) and Cu(110) substrate. It is found that the presence of substrate significantly influences the electronic structure of the chains. Atoms of single chains of Au-Pd, Au-Pt and Au-Ag bind more strongly with Ni atoms of NiAl substrate, as compared with Cu atoms in Cu(110). The interaction between chain atoms is found stronger than the chain-substrate atoms, when chains are placed on Cu substrate, while it is other way round in case of chains on NiAl substrate. Effect of change in positions of atoms in bimetallic chains in presence of substrate is studied by placing double chains of Au-Pd, Au-Pt and Au-Ag on Cu (110) substrate in three different configurations. It is found that Au-Pd and Au-Pt bimetallic chains stabilize in double zigzag topology, when placed on Cu (110) substrate. While Au-Ag chains exhibit ladder topology on Cu(110) substrate. Ferromagnetism that is observed in ground state of free standing chains of Au-Pd and Au-Pt is not found when chains are absorbed on NiAl(110) and Cu(110) substrate. It is likely that the interaction between chain and substrate atoms results to zero magnetic moment.

Electronic structure of free-standing InP and InAs nanowires

2006 ◽  
Vol 21 (11) ◽  
pp. 2927-2935 ◽  
Author(s):  
B. Lassen ◽  
M. Willatzen ◽  
R. Melnik ◽  
L.C. Lew Yan Voon
Keyword(s):  
Electronic Structure ◽  
Electronic Properties ◽  
Experimental Work ◽  
Band Gaps ◽  
Free Standing ◽  
Effective Masses ◽  
Inas Nanowires ◽  
Spurious Solution ◽  
Solution Problem

An eight-band k·p theory that does not suffer from the spurious solution problem is demonstrated. It is applied to studying the electronic properties of InP and InAs free-standing nanowires. Band gaps and effective masses are reported as a function of size, shape, and orientation of the nanowires. We compare our results with experimental work and with other calculations.

Characterization of Electronic Properties of Two-dimensional Refractory Selenides and Tellurides

MRS Advances ◽  
2016 ◽  
Vol 1 (47) ◽  
pp. 3229-3234
Author(s):  
Chandan Biswas ◽  
Gustavo A. Lara Saenz ◽  
Dalal Fadil ◽  
Anupama B. Kaul
Keyword(s):  
Low Temperature ◽  
Electronic Properties ◽  
Transition Metal Dichalcogenides ◽  
Optoelectronic Devices ◽  
Two Dimensional ◽  
Atmospheric Conditions ◽  
Number Of Layers ◽  
Metallic Conduction ◽  
Metal Dichalcogenides

ABSTRACTTransition metal dichalcogenides (TMDs) are emerging among the potential alternatives to graphene. The monolayer of TMDs can easily be exfoliated mechanically and their electronic properties can also be tuned by controlling the number of layers. TMDs possess an advantage over graphene by controlling band gap magnitude appropriate for the electronic and optoelectronic applications. Here we show, mechanically exfoliated TMDs such as NbSe2 and MoTe2 exhibit metallic and fluctuating conductance behavior respectively. Metallic conduction in NbSe2 was investigated under atmospheric conditions and compered with vacuum conditions. Furthermore, NbSe2 resistance was measured at low temperature up to 5.6 K. The above electronic investigations clearly demonstrate ohmic and fluctuating conduction in NbSe2 and MoTe2 respectively which could be applicable for electronic and optoelectronic devices.

scholarly journals Two-dimensional and tubular structures of misfit compounds: Structural and electronic properties

2014 ◽  
Vol 5 ◽  
pp. 2171-2178 ◽  
Author(s):  
Tommy Lorenz ◽  
Jan-Ole Joswig ◽  
Gotthard Seifert
Keyword(s):  
Electronic Structure ◽  
Physical Properties ◽  
Electronic Properties ◽  
Two Dimensional ◽  
Tubular Structures ◽  
Lattice Constants ◽  
Complex Series ◽  
Structural And Electronic Properties ◽  
Interlayer Bonding ◽  
Insight Into

Misfit layer compounds are structures that consist of two sublattices differing in at least one of their lattice constants. The two different layers are stacked either an alternating or in a more complex series resulting in mono- or multi-layer misfit compounds. To date, planar and bent misfit structures, such as tubes, scrolls or nanoparticles, have been synthesized and interesting magnetic and physical properties have been observed as a result of their special structures. Based on these observations, we present an overview of such misfit systems and summarize and discuss their electronic structure as well as the interlayer bonding behaviour, which is not completely understood yet. Furthermore, a more detailed insight into the SnS–SnS2 system is given, which was the first tubular misfit compound that has been synthesized and extensively investigated.

Electronic properties of quasi two-dimensional transition metals chalcogenides with low-dimensional magnetism

Doklady BGUIR ◽  
2020 ◽  
Vol 18 (7) ◽  
pp. 87-95
Author(s):  
M. S. Baranava ◽  
P. A. Praskurava
Keyword(s):  
Transition Metal ◽  
Transition Metals ◽  
Exchange Interaction ◽  
Electronic Properties ◽  
Metal Atom ◽  
Transition Metal Atom ◽  
Two Dimensional ◽  
Transition Metal Atoms ◽  
Ground Magnetic ◽  
Low Dimensional

The search for fundamental physical laws which lead to stable high-temperature ferromagnetism is an urgent task. In addition to the already synthesized two-dimensional materials, there remains a wide list of possible structures, the stability of which is predicted theoretically. The article suggests the results of studying the electronic properties of MAX3 (M = Cr, Fe, A = Ge, Si, X = S, Se, Te) transition metals based compounds with nanostructured magnetism. The research was carried out using quantum mechanical simulation in specialized VASP software and calculations within the Heisenberg model. The ground magnetic states of twodimensional MAX3 and the corresponding energy band structures are determined. We found that among the systems under study, CrGeTe3 is a semiconductor nanosized ferromagnet. In addition, one is a semiconductor with a bandgap of 0.35 eV. Other materials are antiferromagnetic. The magnetic moment in MAX3 is localized on the transition metal atoms: in particular, the main one on the d-orbital of the transition metal atom (and only a small part on the p-orbital of the chalcogen). For CrGeTe3, the exchange interaction integral is calculated. The mechanisms of the formation of magnetic order was established. According to the obtained exchange interaction integrals, a strong ferromagnetic order is formed in the semiconductor plane. The distribution of the projection density of electronic states indicates hybridization between the d-orbital of the transition metal atom and the p-orbital of the chalcogen. The study revealed that the exchange interaction by the mechanism of superexchange is more probabilistic.

First-principles study of two-dimensional bilayer GaN: structure, electronic properties and temperature effect

2019 ◽  
Vol 58 (SC) ◽  
pp. SCCB35 ◽  
Author(s):  
Tomoe Yayama ◽  
Anh Khoa Augustin Lu ◽  
Tetsuya Morishita ◽  
Takeshi Nakanishi
Keyword(s):  
Temperature Effect ◽  
Electronic Properties ◽  
First Principles ◽  
Two Dimensional ◽  
First Principles Study

Electronic structure of two-dimensional electron gases at differently prepared indium arsenide surfaces

2021 ◽  
Vol 555 ◽  
pp. 149516
Author(s):  
Jacek J. Kolodziej ◽  
Dawid Wutke ◽  
Jakub Lis ◽  
Natalia Olszowska
Keyword(s):  
Electronic Structure ◽  
Indium Arsenide ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Electron Gases

scholarly journals Structural, elastic, and electronic properties of chemically functionalized boron phosphide monolayer

RSC Advances ◽  
2021 ◽  
Vol 11 (15) ◽  
pp. 8552-8558
Author(s):  
Tuan V. Vu ◽  
A. I. Kartamyshev ◽  
Nguyen V. Hieu ◽  
Tran D. H. Dang ◽  
Sy-Ngoc Nguyen ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Surface Functionalization ◽  
Two Dimensional ◽  
Boron Phosphide

Surface functionalization is one of the useful techniques for modulating the mechanical and electronic properties of two-dimensional systems.

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