Characterization of Electronic Properties of Two-dimensional Refractory Selenides and Tellurides

MRS Advances ◽  
2016 ◽  
Vol 1 (47) ◽  
pp. 3229-3234
Author(s):  
Chandan Biswas ◽  
Gustavo A. Lara Saenz ◽  
Dalal Fadil ◽  
Anupama B. Kaul

ABSTRACTTransition metal dichalcogenides (TMDs) are emerging among the potential alternatives to graphene. The monolayer of TMDs can easily be exfoliated mechanically and their electronic properties can also be tuned by controlling the number of layers. TMDs possess an advantage over graphene by controlling band gap magnitude appropriate for the electronic and optoelectronic applications. Here we show, mechanically exfoliated TMDs such as NbSe2 and MoTe2 exhibit metallic and fluctuating conductance behavior respectively. Metallic conduction in NbSe2 was investigated under atmospheric conditions and compered with vacuum conditions. Furthermore, NbSe2 resistance was measured at low temperature up to 5.6 K. The above electronic investigations clearly demonstrate ohmic and fluctuating conduction in NbSe2 and MoTe2 respectively which could be applicable for electronic and optoelectronic devices.

2020 ◽  
Vol 22 (25) ◽  
pp. 14088-14098
Author(s):  
Amine Slassi ◽  
David Cornil ◽  
Jérôme Cornil

The rise of van der Waals hetero-structures based on transition metal dichalcogenides (TMDs) opens the door to a new generation of optoelectronic devices.


RSC Advances ◽  
2015 ◽  
Vol 5 (23) ◽  
pp. 17572-17581 ◽  
Author(s):  
Hongsheng Liu ◽  
Nannan Han ◽  
Jijun Zhao

Monolayer transition metal dichalcogenides (TMDs) stand out in two-dimensional (2D) materials due to their potential applications in future microelectronic and optoelectronic devices.


Nano Research ◽  
2016 ◽  
Vol 9 (6) ◽  
pp. 1543-1560 ◽  
Author(s):  
He Tian ◽  
Matthew L. Chin ◽  
Sina Najmaei ◽  
Qiushi Guo ◽  
Fengnian Xia ◽  
...  

2020 ◽  
Vol 10 ◽  
pp. 184798042095509
Author(s):  
Ankit Kumar Verma ◽  
Federico Raffone ◽  
Giancarlo Cicero

Two-dimensional transition metal dichalcogenides have gained great attention because of their peculiar physical properties that make them interesting for a wide range of applications. Lately, alloying between different transition metal dichalcogenides has been proposed as an approach to control two-dimensional phase stability and to obtain compounds with tailored characteristics. In this theoretical study, we predict the phase diagram and the electronic properties of Mo xTi1− xS2 at varying stoichiometry and show how the material is metallic, when titanium is the predominant species, while it behaves as a p-doped semiconductor, when approaching pure MoS2 composition. Correspondingly, the thermodynamically most stable phase switches from the tetragonal to the hexagonal one. Further, we present an example which shows how the proposed alloys can be used to obtain new vertical two-dimensional heterostructures achieving effective electron/hole separation.


RSC Advances ◽  
2019 ◽  
Vol 9 (64) ◽  
pp. 37195-37200 ◽  
Author(s):  
Lin Wang ◽  
Wenyan Wang ◽  
Quan Wang ◽  
Xiaochun Chi ◽  
Zhihui Kang ◽  
...  

It is important to determine the time-dependent evolution of the excited monolayer WS2, which will provide a basis for the reasonable design of optoelectronic devices based on two-dimensional transition metal dichalcogenides.


2020 ◽  
Vol 2 (6) ◽  
pp. 2333-2338
Author(s):  
Liang Guo ◽  
Chun-An Chen ◽  
Zhuquan Zhang ◽  
Daniele M. Monahan ◽  
Yi-Hsien Lee ◽  
...  

Two-dimensional electronic spectroscopy (2DES) provides dual perspectives for characterizing exciton lineshape in monolayer transition metal dichalcogenides (TMDCs), allowing discrimination of homogeneous and inhomogeneous linewidths.


2021 ◽  
Author(s):  
Mubashir A. Kharadi ◽  
Gul Faroz A. Malik ◽  
Farooq A. Khanday

2D materials like transition metal dichalcogenides, black phosphorous, silicene, graphene are at the forefront of being the most potent 2D materials for optoelectronic applications because of their exceptional properties. Several application-specific photodetectors based on 2D materials have been designed and manufactured due to a wide range and layer-dependent bandgaps. Different 2D materials stacked together give rise to many surprising electronic and optoelectronic phenomena of the junctions based on 2D materials. This has resulted in a lot of popularity of 2D heterostructures as compared to the original 2D materials. This chapter presents the progress of optoelectronic devices (photodetectors) based on 2D materials and their heterostructures.


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