scholarly journals Spontaneous doping of two-dimensional NaCl films with Cr atoms: aggregation and electronic structure

Nanoscale ◽  
2015 ◽  
Vol 7 (6) ◽  
pp. 2366-2373 ◽  
Author(s):  
Zhe Li ◽  
Hsin-Yi Tiffany Chen ◽  
Koen Schouteden ◽  
Ewald Janssens ◽  
Chris Van Haesendonck ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Work Function ◽  
Electronic Properties ◽  
Two Dimensional

Upon deposition of Cr atoms on ultrathin NaCl/Au(111) films they form substituting dopants either replacing Na or Cl ions, thereby changing the electronic properties of the film and in particular the work function.

A simple molecular design for tunable two-dimensional imine covalent organic frameworks for optoelectronic applications

2020 ◽  
Vol 22 (37) ◽  
pp. 21360-21368
Author(s):  
Vivek K. Yadav ◽  
Showkat H. Mir ◽  
Vipin Mishra ◽  
Thiruvancheril G. Gopakumar ◽  
Jayant K. Singh
Keyword(s):  
Electronic Structure ◽  
Work Function ◽  
Carrier Mobility ◽  
Molecular Design ◽  
Optoelectronic Properties ◽  
Two Dimensional ◽  
Covalent Organic Frameworks ◽  
Semiconducting Materials ◽  
Optoelectronic Applications

We systematically study the electronic structure, carrier mobility and work function of imine based 2D-COFs. The bandgaps of these semiconducting materials can be tailored by doping with nitrogen for tunable electronic/optoelectronic properties.

scholarly journals Electronic structural critique of interesting thermal and optical properties of C17Ge germagraphene

2020 ◽  
Vol 22 (16) ◽  
pp. 8606-8615 ◽  
Author(s):  
Sujoy Datta ◽  
Debnarayan Jana
Keyword(s):  
Optical Properties ◽  
Electronic Structure ◽  
Thermal Properties ◽  
Work Function ◽  
Hall Conductivity ◽  
Two Dimensional ◽  
Spin Hall Conductivity

We report a theoretical attempt to understand the involvement of the electronic structure in producing spin Hall conductivity and in determining the optical and thermal properties of germagraphene, a buckled two-dimensional material with low work function.

SEMICONDUCTING GRAPHENE

Nano LIFE ◽  
2012 ◽  
Vol 02 (03) ◽  
pp. 1230009 ◽  
Author(s):  
PRASHANT P. SHINDE ◽  
VIJAY KUMAR
Keyword(s):  
Electronic Structure ◽  
Band Gap ◽  
Electronic Properties ◽  
Dirac Point ◽  
Physical Mechanism ◽  
Two Dimensional

This article reviews the fundamental aspects of the electronic structure of two-dimensional graphene and modification of the electronic structure at the Dirac point in order to create a band gap. We discuss how the states near the Dirac point are affected by confinement, adsorption and interaction with a substrate. The physical mechanism for controlling the electronic properties of graphene by BN doping is discussed in detail and this looks like a promising way for making semiconducting graphene for applications.

Geometric and electronic structure of multilayered graphene: synergy of the nondirective ripples and the number of layers

2018 ◽  
Vol 20 (4) ◽  
pp. 2230-2237 ◽  
Author(s):  
Ting Ting Cui ◽  
Jian Chen Li ◽  
Wang Gao ◽  
Qing Jiang
Keyword(s):  
Electronic Structure ◽  
Electronic Properties ◽  
Two Dimensional ◽  
Free Standing ◽  
Number Of Layers

According to the Mermin–Wagner theorem, ripple deformation is ubiquitous in a two-dimensional (2D) free-standing sheet, influencing the electronic properties.

scholarly journals Two-dimensional and tubular structures of misfit compounds: Structural and electronic properties

2014 ◽  
Vol 5 ◽  
pp. 2171-2178 ◽  
Author(s):  
Tommy Lorenz ◽  
Jan-Ole Joswig ◽  
Gotthard Seifert
Keyword(s):  
Electronic Structure ◽  
Physical Properties ◽  
Electronic Properties ◽  
Two Dimensional ◽  
Tubular Structures ◽  
Lattice Constants ◽  
Complex Series ◽  
Structural And Electronic Properties ◽  
Interlayer Bonding ◽  
Insight Into

Misfit layer compounds are structures that consist of two sublattices differing in at least one of their lattice constants. The two different layers are stacked either an alternating or in a more complex series resulting in mono- or multi-layer misfit compounds. To date, planar and bent misfit structures, such as tubes, scrolls or nanoparticles, have been synthesized and interesting magnetic and physical properties have been observed as a result of their special structures. Based on these observations, we present an overview of such misfit systems and summarize and discuss their electronic structure as well as the interlayer bonding behaviour, which is not completely understood yet. Furthermore, a more detailed insight into the SnS–SnS2 system is given, which was the first tubular misfit compound that has been synthesized and extensively investigated.

Electronic properties of quasi two-dimensional transition metals chalcogenides with low-dimensional magnetism

Doklady BGUIR ◽  
2020 ◽  
Vol 18 (7) ◽  
pp. 87-95
Author(s):  
M. S. Baranava ◽  
P. A. Praskurava
Keyword(s):  
Transition Metal ◽  
Transition Metals ◽  
Exchange Interaction ◽  
Electronic Properties ◽  
Metal Atom ◽  
Transition Metal Atom ◽  
Two Dimensional ◽  
Transition Metal Atoms ◽  
Ground Magnetic ◽  
Low Dimensional

The search for fundamental physical laws which lead to stable high-temperature ferromagnetism is an urgent task. In addition to the already synthesized two-dimensional materials, there remains a wide list of possible structures, the stability of which is predicted theoretically. The article suggests the results of studying the electronic properties of MAX3 (M = Cr, Fe, A = Ge, Si, X = S, Se, Te) transition metals based compounds with nanostructured magnetism. The research was carried out using quantum mechanical simulation in specialized VASP software and calculations within the Heisenberg model. The ground magnetic states of twodimensional MAX3 and the corresponding energy band structures are determined. We found that among the systems under study, CrGeTe3 is a semiconductor nanosized ferromagnet. In addition, one is a semiconductor with a bandgap of 0.35 eV. Other materials are antiferromagnetic. The magnetic moment in MAX3 is localized on the transition metal atoms: in particular, the main one on the d-orbital of the transition metal atom (and only a small part on the p-orbital of the chalcogen). For CrGeTe3, the exchange interaction integral is calculated. The mechanisms of the formation of magnetic order was established. According to the obtained exchange interaction integrals, a strong ferromagnetic order is formed in the semiconductor plane. The distribution of the projection density of electronic states indicates hybridization between the d-orbital of the transition metal atom and the p-orbital of the chalcogen. The study revealed that the exchange interaction by the mechanism of superexchange is more probabilistic.

First-principles study of two-dimensional bilayer GaN: structure, electronic properties and temperature effect

2019 ◽  
Vol 58 (SC) ◽  
pp. SCCB35 ◽  
Author(s):  
Tomoe Yayama ◽  
Anh Khoa Augustin Lu ◽  
Tetsuya Morishita ◽  
Takeshi Nakanishi
Keyword(s):  
Temperature Effect ◽  
Electronic Properties ◽  
First Principles ◽  
Two Dimensional ◽  
First Principles Study

Electronic structure of two-dimensional electron gases at differently prepared indium arsenide surfaces

2021 ◽  
Vol 555 ◽  
pp. 149516
Author(s):  
Jacek J. Kolodziej ◽  
Dawid Wutke ◽  
Jakub Lis ◽  
Natalia Olszowska
Keyword(s):  
Electronic Structure ◽  
Indium Arsenide ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Electron Gases

scholarly journals Structural, elastic, and electronic properties of chemically functionalized boron phosphide monolayer

RSC Advances ◽  
2021 ◽  
Vol 11 (15) ◽  
pp. 8552-8558
Author(s):  
Tuan V. Vu ◽  
A. I. Kartamyshev ◽  
Nguyen V. Hieu ◽  
Tran D. H. Dang ◽  
Sy-Ngoc Nguyen ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Surface Functionalization ◽  
Two Dimensional ◽  
Boron Phosphide

Surface functionalization is one of the useful techniques for modulating the mechanical and electronic properties of two-dimensional systems.

scholarly journals Effect of the sample work function on alkali metal dosing induced electronic structure change

2021 ◽  
pp. 147045
Author(s):  
Saegyeol Jung ◽  
Yukiaki Ishida ◽  
Minsoo Kim ◽  
Masamichi Nakajima ◽  
Shigeyuki Ishida ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Alkali Metal ◽  
Work Function ◽  
Structure Change
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