scholarly journals The oxidation kinetics of thin nickel films between 250 and 500 °C

2017 ◽  
Vol 19 (13) ◽  
pp. 9045-9052 ◽  
Author(s):  
Y. Unutulmazsoy ◽  
R. Merkle ◽  
D. Fischer ◽  
J. Mannhart ◽  
J. Maier
Keyword(s):  
Grain Boundary ◽  
Oxidation Kinetics ◽  
Boundary Diffusion ◽  
Grain Boundary Diffusion ◽  
Diffusion Controlled ◽  
Ni Oxidation ◽  
Thin Nickel ◽  
P Diffusion ◽  
Kinetics Of ◽  
Nio Films

Diffusion controlled Ni oxidation is enhanced by fast grain boundary diffusion in growing nanocrystalline NiO films.

Diffusion Mechanisms in Nanocrystalline and Nanolaminated Au-Cu

2007 ◽  
Vol 266 ◽  
pp. 13-28 ◽  
Author(s):  
Alan F. Jankowski
Keyword(s):  
Low Temperature ◽  
Grain Boundary ◽  
Grain Growth ◽  
Boundary Diffusion ◽  
Bulk Diffusion ◽  
Grain Boundary Diffusion ◽  
Dominant Mechanism ◽  
Temperature Range ◽  
Diffusion Mechanisms ◽  
Kinetics Of

Thermal anneal treatments are used to identify the temperature range of the two dominant diffusion mechanisms – bulk and grain boundary. To assess the transition between mechanisms, the low temperature range for bulk diffusion is established utilizing the decay of static concentration waves in composition-modulated nanolaminates. These multilayered structures are synthesized using vapor deposition methods as thermal evaporation and magnetron sputtering. However, at low temperature the kinetics of grain-boundary diffusion are much faster than bulk diffusion. The synthesis of Au-Cu alloys (0-20 wt.% Cu) with grain sizes as small as 5 nm is accomplished using pulsed electro-deposition. Since the nanocrystalline grain structure is thermally unstable, these structures are ideal for measuring the kinetics of grain boundary diffusion as measured by coarsening of grain size with low temperature anneal treatments. A transition in the dominant mechanism for grain growth from grain boundary to bulk diffusion is found with an increase in temperature. The activation energy for bulk diffusion is found to be 1.8 eV·atom-1 whereas that for grain growth at low temperatures is only 0.2 eV·atom-1. The temperature for transitioning from the dominant mechanism of grain boundary to bulk diffusion is found to be 57% of the alloy melt temperature and is dependent on composition.

scholarly journals Determination of Grain Boundary Diffusion Coefficients in C-Regime by Hwang-Balluffi Method: Silver Diffusion in Pd

2009 ◽  
Vol 289-292 ◽  
pp. 763-767 ◽  
Author(s):  
Z. Balogh ◽  
Z. Erdélyi ◽  
Dezső L. Beke ◽  
Alain Portavoce ◽  
Christophe Girardeaux ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Diffusion Coefficients ◽  
Boundary Diffusion ◽  
Grain Boundary Diffusion ◽  
Controlled Processes ◽  
Diffusion Controlled ◽  
Arrhenius Function ◽  
Data Points ◽  
Accumulation Kinetics

Diffusion controlled processes play a crucial role in the degradation of technical materials. At low temperatures the most significant of them is the diffusion along grain boundaries. In thin film geometry one of the best methods for determining the grain boundary (GB) diffusion coefficient of an impurity element is the Hwang-Balluffi method, in which a surface sensitive technique is used to follow the surface accumulation kinetics. Results of grain boundary diffusion measurements, carried out in our laboratory by this method in three different materials systems (Ag/Pd, Ag/Cu and Au/Ni) are reviewed. In case of Ag diffusion along Pd GBs the surface accumulation was followed by AES method. The data points can be well fitted by an Arrhenius function with an activation energy Q=0.99eV

Grain-boundary diffusion-controlled stress concentration in polycrystals

2003 ◽  
Vol 83 (1) ◽  
pp. 29-38 ◽  
Author(s):  
D. Moldovan ◽  
D. Wolf ◽  
S. R. Phillpot ◽  
A. K. Mukherjee ◽  
H. Gleiter
Keyword(s):  
Stress Concentration ◽  
Grain Boundary ◽  
Boundary Diffusion ◽  
Grain Boundary Diffusion ◽  
Diffusion Controlled

Diffusion of Arsenic and Phosphorus in Laserprocessed-Polycrystalline-Silicon-Thin-Films

1981 ◽  
Vol 5 ◽  
Author(s):  
H. Baumgart ◽  
H. J. Leamy ◽  
L. E. Trimble ◽  
C. J. Doherty ◽  
G. K. Celler
Keyword(s):  
Thin Films ◽  
Grain Boundary ◽  
Boundary Diffusion ◽  
Diffusion Length ◽  
Grain Boundary Diffusion ◽  
Silicon Thin Films ◽  
P Diffusion ◽  
Ion Laser ◽  
Si Films

ABSTRACTGrain boundary diffusion of arsenic and phosphorus in laser processed polycrystalline Si films has been investigated. Mesa diodes were fabricated in LPCVD Si thin films on SiO2 and subsequently recrystallized by cw Ar ion laser processing to form large grain material. The diffusion length of enhanced As and P diffusion along grain boundaries intersecting the p-n junction has been measured by the EBIC technique. Quantitative experimentation allowed determination of the grain boundary diffusion coefficients of As and P in the temperature range from 900°C to 1250°C.

scholarly journals Grain Boundary Diffusion Controlled Creep of Polycrystalline Ni-Zn Ferrite

1973 ◽  
Vol 81 (933) ◽  
pp. 203-210
Author(s):  
Tomozo NISHIKAWA ◽  
Toshihiko NISHIDA ◽  
Kenzo IWAMOTO ◽  
Hiroshi SHOMON ◽  
Isao UEI
Keyword(s):  
Grain Boundary ◽  
Boundary Diffusion ◽  
Grain Boundary Diffusion ◽  
Diffusion Controlled ◽  
Zn Ferrite
Sign in / Sign up

Export Citation Format

Share Document