Zn(ii)-based metal–organic framework: an exceptionally thermally stable, guest-free low dielectric material

2017 ◽  
Vol 5 (6) ◽  
pp. 1508-1513 ◽  
Author(s):  
Shruti Mendiratta ◽  
Muhammad Usman ◽  
Chun-Chi Chang ◽  
Yung-Chi Lee ◽  
Jenq-Wei Chen ◽  
...  

An exceptional thermally stable, chemically stable and guest-free Zn-based metal–organic framework exhibits low dielectric behaviour.

2014 ◽  
Vol 2 (19) ◽  
pp. 3762-3768 ◽  
Author(s):  
Muhammad Usman ◽  
Cheng-Hua Lee ◽  
Dung-Shing Hung ◽  
Shang-Fan Lee ◽  
Chih-Chieh Wang ◽  
...  

A Sr-based metal–organic framework exhibits an intrinsic low dielectric constant after removing the water molecules. A low dielectric constant and high thermal stability make this compound a candidate for use as a low-k material.


RSC Advances ◽  
2019 ◽  
Vol 9 (28) ◽  
pp. 16183-16186 ◽  
Author(s):  
W. Xu ◽  
S. S. Yu ◽  
H. Zhang ◽  
H. B. Duan

A MOFs compound [NH2(CH3)2]2[Zn3(bpdc)4]·3DMF (1) shows two step dielectric relaxation and its guest-free framework (1′) possesses an ultra-low κ value of 1.80 (at 100 kHz) over a wide temperature range and high thermal stability.


2013 ◽  
Vol 13 (9) ◽  
pp. 4125-4130 ◽  
Author(s):  
Yameng Li ◽  
Zhanfeng Ju ◽  
Benlai Wu ◽  
Daqiang Yuan

2014 ◽  
Vol 38 (6) ◽  
pp. 2254-2257 ◽  
Author(s):  
Ping-Chun Guo ◽  
Tian-Yu Chen ◽  
Xiao-Ming Ren ◽  
Wei-Hua Ning ◽  
Wanqin Jin

A metal–organic-framework compound shows novel three-step dielectric relaxations arising from reorientational motion of polar guest molecules and its guest-free framework is a low-κ dielectric material.


2006 ◽  
Vol 110 (43) ◽  
pp. 21509-21520 ◽  
Author(s):  
Kai Chung Szeto ◽  
Karl Petter Lillerud ◽  
Mats Tilset ◽  
Morten Bjørgen ◽  
Carmelo Prestipino ◽  
...  

2020 ◽  
Vol 8 (24) ◽  
pp. 11958-11965 ◽  
Author(s):  
Arif I. Inamdar ◽  
Abhishek Pathak ◽  
Muhammad Usman ◽  
Kuan-Ru Chiou ◽  
Pei-Hsien Tsai ◽  
...  

A high-κ copper-based metal–organic framework with unusual dielectric behaviour and outstanding water resistant properties was successfully designed for self-protecting microelectronic devices as gate dielectrics.


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