Recent advances in one-dimensional organic p–n heterojunctions for optoelectronic device applications

2016 ◽  
Vol 4 (40) ◽  
pp. 9388-9398 ◽  
Author(s):  
Qingyuan Li ◽  
Shang Ding ◽  
Weigang Zhu ◽  
Linlin Feng ◽  
Huanli Dong ◽  
...  
Keyword(s):  
Optoelectronic Device ◽  
Organic P ◽  
One Dimensional ◽  
Recent Advances ◽  
Device Applications ◽  
Optoelectronic Applications ◽  
Organic Heterojunctions

Recent advances in various one-dimensional organic heterojunctions including their synthesis and optoelectronic applications are summarized in this MiniRev article.

scholarly journals Science and applications of wafer-scale crystalline carbon nanotube films prepared through controlled vacuum filtration

2019 ◽  
Vol 6 (3) ◽  
pp. 181605 ◽  
Author(s):  
Weilu Gao ◽  
Junichiro Kono
Keyword(s):  
Materials Science ◽  
Optoelectronic Device ◽  
Filtration Method ◽  
Vacuum Filtration ◽  
One Dimensional ◽  
Wafer Scale ◽  
Device Applications ◽  
Spectroscopy Studies ◽  
Physical Phenomena ◽  
Filtration Technique

Carbon nanotubes (CNTs) make an ideal one-dimensional (1D) material platform for the exploration of novel physical phenomena under extremely strong quantum confinement. The 1D character of electrons, phonons and excitons in individual CNTs features extraordinary electronic, thermal and optical properties. Since their discovery in 1991, they have been continuing to attract interest in various disciplines, including chemistry, materials science, physics and engineering. However, the macroscopic manifestation of 1D properties is still limited, despite significant efforts for decades. Recently, a controlled vacuum filtration method has been developed for the preparation of wafer-scale films of crystalline chirality-enriched CNTs, and such films have enabled exciting new fundamental studies and applications. In this review, we will first discuss the controlled vacuum filtration technique, and then summarize recent discoveries in optical spectroscopy studies and optoelectronic device applications using films prepared by this technique.

Recent advances in the fabrication of graphene–ZnO heterojunctions for optoelectronic device applications

2018 ◽  
Vol 6 (15) ◽  
pp. 3815-3833 ◽  
Author(s):  
Feng-Xia Liang ◽  
Yang Gao ◽  
Chao Xie ◽  
Xiao-Wei Tong ◽  
Zhong-Jun Li ◽  
...  
Keyword(s):  
Synergistic Effects ◽  
Optoelectronic Device ◽  
Research Interest ◽  
Recent Advances ◽  
Device Applications ◽  
Photoelectric Devices

Recently, by taking advantage of the synergistic effects of both graphene and ZnO, various photoelectric devices that combine graphene and ZnO have exhibited excellent device performances and attracted increasing research interest.

scholarly journals Recent Advances in Strain-Induced Piezoelectric and Piezoresistive Effect-Engineered 2D Semiconductors for Adaptive Electronics and Optoelectronics

2020 ◽  
Vol 12 (1) ◽  
Author(s):  
Feng Li ◽  
Tao Shen ◽  
Cong Wang ◽  
Yupeng Zhang ◽  
Junjie Qi ◽  
...  
Keyword(s):  
Scientific Community ◽  
Strain Engineering ◽  
Future Research ◽  
Research Directions ◽  
Piezoresistive Effect ◽  
One Dimensional ◽  
Recent Advances ◽  
2D Semiconductors ◽  
Device Applications ◽  
Future Research Directions

AbstractThe development of two-dimensional (2D) semiconductors has attracted widespread attentions in the scientific community and industry due to their ultra-thin thickness, unique structure, excellent optoelectronic properties and novel physics. The excellent flexibility and outstanding mechanical strength of 2D semiconductors provide opportunities for fabricated strain-sensitive devices and utilized strain tuning their electronic and optic–electric performance. The strain-engineered one-dimensional materials have been well investigated, while there is a long way to go for 2D semiconductors. In this review, starting with the fundamental theories of piezoelectric and piezoresistive effect resulted by strain, following we reviewed the recent simulation works of strain engineering in novel 2D semiconductors, such as Janus 2D and 2D-Xene structures. Moreover, recent advances in experimental observation of strain tuning PL spectra and transport behavior of 2D semiconductors are summarized. Furthermore, the applications of strain-engineered 2D semiconductors in sensors, photodetectors and nanogenerators are also highlighted. At last, we in-depth discussed future research directions of strain-engineered 2D semiconductor and related electronics and optoelectronics device applications.

Recent advances in one-dimensional halide perovskites for optoelectronic applications

Nanoscale ◽  
2018 ◽  
Vol 10 (45) ◽  
pp. 20963-20989 ◽  
Author(s):  
Ting Qiu ◽  
Yanqiang Hu ◽  
Feng Xu ◽  
Zhong Yan ◽  
Fan Bai ◽  
...  
Keyword(s):  
Metal Halide ◽  
Perovskite Nanocrystals ◽  
One Dimensional ◽  
Synthesis Techniques ◽  
Recent Advances ◽  
Metal Halide Perovskite ◽  
Halide Perovskites ◽  
Halide Perovskite ◽  
Optoelectronic Applications

This article reviews the achievements in synthesis techniques and nanoscale optoelectronic applications based on one-dimensional metal–halide perovskite nanocrystals.

Electrically driven assembly of CdTe quantum dots into photoconductive microwires

2015 ◽  
Vol 3 (8) ◽  
pp. 1645-1648 ◽  
Author(s):  
Gaurav Maheshwari ◽  
Mona Mittal ◽  
Sameer Sapra ◽  
Shalini Gupta
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Low Cost ◽  
Optoelectronic Device ◽  
Low Energy ◽  
Cdte Quantum Dots ◽  
One Dimensional ◽  
Device Applications ◽  
Nanocrystal Assembly

Low energy, low cost quantum dot nanocrystal assembly into one-dimensional microwires for optoelectronic device applications.

Tunable electronic and dielectric properties of β-phosphorene nanoflakes for optoelectronic applications

RSC Advances ◽  
2016 ◽  
Vol 6 (104) ◽  
pp. 101835-101845 ◽  
Author(s):  
Pradeep Bhatia ◽  
Ram Swaroop ◽  
Ashok Kumar
Keyword(s):  
Density Functional Theory ◽  
Dielectric Properties ◽  
Dielectric Response ◽  
Density Functional ◽  
Energy Gap ◽  
Optoelectronic Device ◽  
Functional Theory ◽  
Device Applications ◽  
Optoelectronic Applications

Electronic and dielectric properties of β-phosphorene nanoflakes in various configurations using density functional theory are reported. The tunable energy gap and dielectric response make these nanoflakes potential candidates for optoelectronic device applications.

TEM and cathodoluminescence of precipitates in II-VI semiconductors

1988 ◽  
Vol 46 ◽  
pp. 488-489
Author(s):  
Joanna L. Batstone
Keyword(s):  
Crystal Growth ◽  
Band Gap ◽  
Local Strain ◽  
Wide Band ◽  
Optoelectronic Device ◽  
Wide Band Gap ◽  
Bulk Crystal Growth ◽  
Transmission Electron ◽  
Device Applications ◽  
Stoichiometry Control

Interest in II-VI semiconductors centres around optoelectronic device applications. The wide band gap II-VI semiconductors such as ZnS, ZnSe and ZnTe have been used in lasers and electroluminescent displays yielding room temperature blue luminescence. The narrow gap II-VI semiconductors such as CdTe and HgxCd1-x Te are currently used for infrared detectors, where the band gap can be varied continuously by changing the alloy composition x.Two major sources of precipitation can be identified in II-VI materials; (i) dopant introduction leading to local variations in concentration and subsequent precipitation and (ii) Te precipitation in ZnTe, CdTe and HgCdTe due to native point defects which arise from problems associated with stoichiometry control during crystal growth. Precipitation is observed in both bulk crystal growth and epitaxial growth and is frequently associated with segregation and precipitation at dislocations and grain boundaries. Precipitation has been observed using transmission electron microscopy (TEM) which is sensitive to local strain fields around inclusions.

In(Ga)N Nanowire Heterostructures and Optoelectronic Device Applications

2011 ◽  
Vol 1 (2) ◽  
pp. 123-139
Author(s):  
Saeed Fathololoumi ◽  
Hieu P. T. Nguyen ◽  
Zetian Mi
Keyword(s):  
Optoelectronic Device ◽  
Nanowire Heterostructures ◽  
Device Applications

In(Ga)N Nanowire Heterostructures and Optoelectronic Device Applications

2011 ◽  
Vol 1 (2) ◽  
pp. 123-139 ◽  
Author(s):  
Saeed Fathololoumi ◽  
Hieu P. T. Nguyen ◽  
Zetian Mi
Keyword(s):  
Optoelectronic Device ◽  
Nanowire Heterostructures ◽  
Device Applications
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