Electrically driven assembly of CdTe quantum dots into photoconductive microwires

2015 ◽  
Vol 3 (8) ◽  
pp. 1645-1648 ◽  
Author(s):  
Gaurav Maheshwari ◽  
Mona Mittal ◽  
Sameer Sapra ◽  
Shalini Gupta

Low energy, low cost quantum dot nanocrystal assembly into one-dimensional microwires for optoelectronic device applications.

2009 ◽  
Vol 2009 ◽  
pp. 1-4
Author(s):  
Nebojša Romčević ◽  
Maja Romčević ◽  
Radmila Kostić ◽  
Dušanka Stojanović ◽  
Aleksandra Milutinović ◽  
...  

We present photoluminescence (PL) measurements of two different, 3 monolayers and 12 monolayers (ml), CdTe self-assembled quantum dot (SAQD) samples. The spectra were recorded in the temperature range 20 K–300 K, with photoexcitation over the ZnTe barrier layer. PL spectra displayed two main emission bands. High-energy PL emission(E1)is ZnTe LO like phonon- (ωLO= 204.2 cm−1(3 ml),ωLO= 207.3 cm−1(12 ml)) assisted deexcitation. Dominant low-energy band(E2)presents the direct deexcitation to ground state of the CdTe quantum dots.


RSC Advances ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 1966-1970 ◽  
Author(s):  
Chao-Xi Chen ◽  
Yu-Han Li ◽  
Yun-Lu Zhou ◽  
Jun-Hao Zhang ◽  
Qi-Zhuang Wei ◽  
...  

A reusable magnetic-quantum dot material with good magnetic property and high fluorescence retention can qualitatively and quantitatively detect four kinds of antibiotics.


2001 ◽  
Vol 7 (S2) ◽  
pp. 202-203
Author(s):  
T. Topuria ◽  
P. Möck ◽  
N.D. Browning ◽  
L.V. Titova ◽  
M. Dobrowolska ◽  
...  

CdSe/ZnSe based semiconductor quantum dot (Q D) structures are a promising candidate for optoelectronic device applications. However, key to the luminescence properties is the cation distribution and ordering on the atomic level within the CdSe QDs/agglomerates. Here the Z contrast imaging technique in the scanning transmission electron microscope (STEM) is employed to study multisheet (Cd,Zn,Mn)Se QD structures. Since Z-contrast is an incoherent imaging technique, problems associated with strain contrast in conventional TEM are avoided an accurate size and composition determinations can be made.For this work we used a JEOL JEM 201 OF field emission STEM/TEM. The sample was grown by molecular beam epitaxy in order to achieve vertical self-ordering of Cd rich quasi-2D platelet This sample comprises 8 sequences of 10 ML (2.83 nm)Zn0.9Mn0.1Se cladding layer and 0.3 ML (0.09 nm) CdSe sheet, a further 10 ML of Zn0.9Mn0.1Se, and a 50 nm ZnSe capping layer.


The Analyst ◽  
2015 ◽  
Vol 140 (19) ◽  
pp. 6748-6757 ◽  
Author(s):  
Xuanping Tan ◽  
Jidong Yang ◽  
Qin Li ◽  
Qiong Yang

This paper reports a quantum dot (QD)-based “off–on” fluorescent biosensor specifically for the determination of glutathione (GSH) with high sensitivity.


2017 ◽  
Vol 5 (45) ◽  
pp. 23960-23966 ◽  
Author(s):  
Kunyuan Lu ◽  
Yongjie Wang ◽  
Jianyu Yuan ◽  
Zequn Cui ◽  
Guozheng Shi ◽  
...  

New-generation solar cells based on colloidal lead chalcogenide (PbX) quantum dots (CQDs) are promising low-cost solution-processed photovoltaics.


2015 ◽  
Vol 2 (1) ◽  
pp. 60-67 ◽  
Author(s):  
Simanta Kundu ◽  
Santanu Bhattacharyya ◽  
Amitava Patra

The efficient resonance energy transfer from CdTe quantum dots (donors) to Nile Red dye (acceptor) encapsulated PMMA nanoparticles for light harvesting is described.


2014 ◽  
Vol 668-669 ◽  
pp. 818-821
Author(s):  
Hai Yan Wang ◽  
Ya Ting Zhang ◽  
Xiao Xian Song ◽  
Lu Fan Jin ◽  
Hai Tao Dai ◽  
...  

With the breakthrough of mobility in quantum dot electric field transistors (Q-EFTs), the potential application in these functional devices has revealed and been paid more attentions, due to flexibility in design, low cost, facility for processing and large area. One of the most important applications of FETs is the photoconductive detector. However, these functional FETs have less been reported. In this work, colloidal PbS Q-FETs were successfully fabricated by reasonable structure design and layer-by-layer depositon technique PbS quantum-dots. The bipolar property was demonstrated by the output and transfer characteristics, as devices work in I and III quadrants simultaneously. The mobilities of electron and hole are 0.16 cm2/(V⋅s) and 0.28 cm2/(V⋅s), respectively. Q-FETs work as photoconductive detectors at both positive and negative gate bias voltages. Under constant gate bias, photocurrent increase exponentially with the intensity of light. The responding region consisted with the absorption range of PbS quantum dots. A linearity was found in drain voltage and incidence of laser power, the ratio was attributing to 0.0019 (μW⋅V)-1.


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