Recent advances in the fabrication of graphene–ZnO heterojunctions for optoelectronic device applications

2018 ◽  
Vol 6 (15) ◽  
pp. 3815-3833 ◽  
Author(s):  
Feng-Xia Liang ◽  
Yang Gao ◽  
Chao Xie ◽  
Xiao-Wei Tong ◽  
Zhong-Jun Li ◽  
...  
Keyword(s):  
Synergistic Effects ◽  
Optoelectronic Device ◽  
Research Interest ◽  
Recent Advances ◽  
Device Applications ◽  
Photoelectric Devices

Recently, by taking advantage of the synergistic effects of both graphene and ZnO, various photoelectric devices that combine graphene and ZnO have exhibited excellent device performances and attracted increasing research interest.

Recent advances in one-dimensional organic p–n heterojunctions for optoelectronic device applications

2016 ◽  
Vol 4 (40) ◽  
pp. 9388-9398 ◽  
Author(s):  
Qingyuan Li ◽  
Shang Ding ◽  
Weigang Zhu ◽  
Linlin Feng ◽  
Huanli Dong ◽  
...  
Keyword(s):  
Optoelectronic Device ◽  
Organic P ◽  
One Dimensional ◽  
Recent Advances ◽  
Device Applications ◽  
Optoelectronic Applications ◽  
Organic Heterojunctions

Recent advances in various one-dimensional organic heterojunctions including their synthesis and optoelectronic applications are summarized in this MiniRev article.

TEM and cathodoluminescence of precipitates in II-VI semiconductors

1988 ◽  
Vol 46 ◽  
pp. 488-489
Author(s):  
Joanna L. Batstone
Keyword(s):  
Crystal Growth ◽  
Band Gap ◽  
Local Strain ◽  
Wide Band ◽  
Optoelectronic Device ◽  
Wide Band Gap ◽  
Bulk Crystal Growth ◽  
Transmission Electron ◽  
Device Applications ◽  
Stoichiometry Control

Interest in II-VI semiconductors centres around optoelectronic device applications. The wide band gap II-VI semiconductors such as ZnS, ZnSe and ZnTe have been used in lasers and electroluminescent displays yielding room temperature blue luminescence. The narrow gap II-VI semiconductors such as CdTe and HgxCd1-x Te are currently used for infrared detectors, where the band gap can be varied continuously by changing the alloy composition x.Two major sources of precipitation can be identified in II-VI materials; (i) dopant introduction leading to local variations in concentration and subsequent precipitation and (ii) Te precipitation in ZnTe, CdTe and HgCdTe due to native point defects which arise from problems associated with stoichiometry control during crystal growth. Precipitation is observed in both bulk crystal growth and epitaxial growth and is frequently associated with segregation and precipitation at dislocations and grain boundaries. Precipitation has been observed using transmission electron microscopy (TEM) which is sensitive to local strain fields around inclusions.

In(Ga)N Nanowire Heterostructures and Optoelectronic Device Applications

2011 ◽  
Vol 1 (2) ◽  
pp. 123-139
Author(s):  
Saeed Fathololoumi ◽  
Hieu P. T. Nguyen ◽  
Zetian Mi
Keyword(s):  
Optoelectronic Device ◽  
Nanowire Heterostructures ◽  
Device Applications

In(Ga)N Nanowire Heterostructures and Optoelectronic Device Applications

2011 ◽  
Vol 1 (2) ◽  
pp. 123-139 ◽  
Author(s):  
Saeed Fathololoumi ◽  
Hieu P. T. Nguyen ◽  
Zetian Mi
Keyword(s):  
Optoelectronic Device ◽  
Nanowire Heterostructures ◽  
Device Applications

Synthesis and Electrochemical Properties of NiFe-Se/rGO Nanocomposites

2020 ◽  
Vol 13 ◽  
Author(s):  
Rouwei Yan ◽  
Biao Xu ◽  
K. P. Annamalai ◽  
Tianlu Chen ◽  
Zhiming Nie ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Graphene Oxide ◽  
Energy Storage ◽  
Synergistic Effects ◽  
Nitrogen Adsorption ◽  
Storage Device ◽  
Energy Storage And Conversion ◽  
Step Method ◽  
Practical Applications ◽  
Device Applications

Background : Renewable energies are in great demand because of the shortage of traditional fossil energy and the associated environmental problems. Ni and Se-based materials are recently studied for energy storage and conversion owing to their reasonable conductivities and enriched redox activities as well as abundance. However, their electrochemical performance is still unsatisfactory for practical applications. Objective: To enhance the capacitance storage of Ni-Se materials via modification of their physiochemical properties with Fe. Methods: A two-step method was carried out to prepare FeNi-Se loaded reduced graphene oxide (FeNi-Se/rGO). In the first step, metal salts and graphene oxide (GO) were mixed under basic condition and autoclaved to obtain hydroxide intermediates. As a second step, selenization process was carried out to acquire FeNi-Se/rGO composites. Results: X-ray diffraction measurements (XRD), nitrogen adsorption at 77K, scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were carried out to study the structures, porosities and the morphologies of the composites. Electrochemical measurements revealed that FeNi-Se/rGO notably enhanced capacitance than the NiSe/G composite. This enhanced performance was mainly attributed to the positive synergistic effects of Fe and Ni in the composites, which not only had influence on the conductivity of the composite but also enhanced redox reactions at different current densities. Conclusion: NiFe-Se/rGO nanocomposites were synthesized in a facile way. The samples were characterized physicochemically and electrochemically. NiFeSe/rGO giving much higher capacitance storage than the NiSe/rGO explained that the nanocomposites could be an electrode material for energy storage device applications.

ε-InSe single crystals grown by a horizontal gradient freeze method

CrystEngComm ◽  
2020 ◽  
Vol 22 (45) ◽  
pp. 7864-7869
Author(s):  
Maojun Sun ◽  
Wei Wang ◽  
Qinghua Zhao ◽  
Xuetao Gan ◽  
Yuanhui Sun ◽  
...  
Keyword(s):  
Single Crystals ◽  
Optoelectronic Device ◽  
Indium Selenide ◽  
Horizontal Gradient ◽  
Device Applications

Indium selenide (InSe) single crystals have been considered as promising candidates for future optical, electrical, and optoelectronic device applications.

Discotic columnar liquid-crystalline polymer semiconducting materials with high charge-carrier mobility via rational macromolecular engineering

2017 ◽  
Vol 8 (21) ◽  
pp. 3286-3293 ◽  
Author(s):  
Bin Mu ◽  
Xingtian Hao ◽  
Jian Chen ◽  
Qian Li ◽  
Chunxiu Zhang ◽  
...  
Keyword(s):  
Liquid Crystalline ◽  
Cost Effective ◽  
Crystalline Polymer ◽  
Charge Carrier Mobility ◽  
Optoelectronic Device ◽  
Side Chain ◽  
Liquid Crystal Polymers ◽  
Semiconducting Materials ◽  
Organic Semiconducting Materials ◽  
Device Applications

Well-prepared side-chain discotic liquid crystal polymers with shorter spacers in ordered columnar phases are fascinating and promising cost-effective, solution-processable organic semiconducting materials for various potential optoelectronic device applications.

Optical Properties of Zinc Sulphide Thin Films Coated with Aqueous Organic Dye Extract for Solar and Optoelectronic Device Applications

2021 ◽  
Vol 50 (5) ◽  
pp. 2576-2583
Author(s):  
Uche Paul Onochie ◽  
Sunday Chukwuyem Ikpeseni ◽  
Anthony Egwu Igweoko ◽  
Hilary Ijeoma Owamah ◽  
Chinecherem Collins Aluma ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Optoelectronic Device ◽  
Zinc Sulphide ◽  
Organic Dye ◽  
Device Applications

Optical and structural studies of some zinc calcium borate glasses for optoelectronic device applications

2021 ◽  
Vol 32 (7) ◽  
pp. 9392-9399
Author(s):  
Hosam M. Gomaa ◽  
I. S. Yahia ◽  
B. M. A. Makram ◽  
Ahmed H. El-Dosokey ◽  
Saeid M. Elkatlawy
Keyword(s):  
Optoelectronic Device ◽  
Borate Glasses ◽  
Structural Studies ◽  
Calcium Borate ◽  
Device Applications
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