Reduced hydrogen diffusion in strained amorphous SiO2: understanding ageing in MOSFET devices

2016 ◽  
Vol 4 (34) ◽  
pp. 8104-8110 ◽  
Author(s):  
S. Arash Sheikholeslam ◽  
Hegoi Manzano ◽  
Cristian Grecu ◽  
André Ivanov
Keyword(s):  
Activation Energy ◽  
Silicon Dioxide ◽  
Amorphous Silicon ◽  
Hydrogen Diffusion ◽  
Diffusion Activation Energy ◽  
Amorphous Sio2 ◽  
Amorphous Silicon Dioxide ◽  
Diffusion Activation

Hydrogen diffusion activation energy in amorphous silicon dioxide is reduced by straining the material, which can reduce aging of MOSFETs.

Silicon-Hydrogen Bonding and Hydrogen Diffusion in Amorphous Silicon

1995 ◽  
Vol 377 ◽  
Author(s):  
Chris G. Van De Walle ◽  
R. A. Street
Keyword(s):  
Activation Energy ◽  
Amorphous Silicon ◽  
First Principles ◽  
Density Functional ◽  
Hydrogen Diffusion ◽  
Chemical Potential ◽  
Energy Levels ◽  
Diffusion Activation Energy ◽  
Quantitative Identification ◽  
Diffusion Activation

ABSTRACTDespite its importance for technological applications, the behavior of hydrogen in amorphous silicon is not fully understood. In particular, the anomalously low activation energy (1.5 eV) for hydrogen diffusion has remained unexplained. We investigate the interaction of hydrogen with dangling bonds using first-principles pseudopotential-density-functional calculations. Our analysis shows that the diffusion activation energy should be measured from the hydrogen chemical potential, and that this level should be identified with the formation energy of Si-H bonds. A quantitative identification of the energy levels with experimental observables is then possible.

Hydrogen Diffusion in Boron Doped Diamond: Evidence of Hydrogen-Boron Interactions

1998 ◽  
Vol 510 ◽  
Author(s):  
J. Chevallier ◽  
B. Theys ◽  
C. Grattepain ◽  
A. Deneuville ◽  
E. Gheeraert
Keyword(s):  
Activation Energy ◽  
Boron Concentration ◽  
Hydrogen Diffusion ◽  
Diffusion Activation Energy ◽  
Boron Doped Diamond ◽  
Boron Doped ◽  
Hydrogen Ionization ◽  
Diffusion Temperature ◽  
And Diffusion ◽  
Diffusion Activation

AbstractDeuterium diffusion has been investigated in boron doped diamond as a function of the diffusion temperature and the boron concentration. The results show that, up to 480°C, hydrogen diffusion is limited by the boron concentration with a diffusion activation energy of 0.35 eV for [B] = 5×1019 cm−3. This first experimental evidence of deuterium-boron interactions in diamond is interpreted as the result of hydrogen ionization and diffusion of fairly mobile protons which form pairs with negatively charged boron acceptors

Photoluminescence from amorphous SiO2/Silicon/amorphous SiO2single quantum well structures

2000 ◽  
Vol 638 ◽  
Author(s):  
Y.Q. Wang ◽  
Y. Ishikawa ◽  
N. Shibata
Keyword(s):  
Quantum Well ◽  
Silicon Dioxide ◽  
Amorphous Silicon ◽  
Room Temperature ◽  
Peak Position ◽  
Single Quantum ◽  
Amorphous Sio2 ◽  
Single Quantum Well ◽  
Quantum Well Structures ◽  
Amorphous Silicon Dioxide

AbstractAmorphous silicon dioxide/silicon/amorphous silicon dioxide single quantum well structures were fabricated by oxygen implantation followed by thermal oxidation. No photoluminescence (PL) was observed from the as grown samples. We found that annealing in hydrogen allows the single quantum well (SQW) structures to emit two-peak (blue and yellow) PL at room temperature (RT). The blue PL (2.9 eV) does not change with the thickness of Si layers or the temperature. The yellow peak varied from 2.0 eV to 2.4 eV with thinning of the Si layer from 5 nm to 0.5 nm. Lowering the temperature also changed the yellow peak position of the 1.5 nm Si-SQW structure from 2.3 eV (RT) to 2.6 eV (8.4 K). We conclude that the blue PL is from SiO2 and the yellow PL is caused by a recombination process in the Si-SQW.

scholarly journals Thermally stimulated oxygen desorption in Sr2FeMoO6-δ

2018 ◽  
Vol 4 (1) ◽  
pp. 1-5 ◽  
Author(s):  
Nikolay A. Kalanda
Keyword(s):  
Activation Energy ◽  
Oxygen Diffusion ◽  
Gas Flow ◽  
Oxygen Vacancies ◽  
Early Stage ◽  
Diffusion Activation Energy ◽  
Energy Calculation ◽  
Heating Rates ◽  
Oxygen Desorption ◽  
Diffusion Activation

Polycrystalline Sr2FeMoO6-δ specimens have been obtained by solid state synthesis from partially reduced SrFeO2,52 and SrMoO4 precursors. It has been shown that during oxygen desorption from the Sr2FeMoO6-δ compound in polythermal mode in a 5%H2/Ar gas flow at different heating rates, the oxygen index 6-δ depends on the heating rate and does not achieve saturation at T = 1420 K. Oxygen diffusion activation energy calculation using the Merzhanov method has shown that at an early stage of oxygen desorption from the Sr2FeMoO6-δ compound the oxygen diffusion activation energy is the lowest Еа = 76.7 kJ/mole at δ = 0.005. With an increase in the concentration of oxygen vacancies, the oxygen diffusion activation energy grows to Еа = 156.3 kJ/mole at δ = 0.06. It has been found that the dδ/dt = f (Т) and dδ/dt = f (δ) functions have a typical break which allows one to divide oxygen desorption in two process stages. It is hypothesized that an increase in the concentration of oxygen vacancies Vo•• leads to their mutual interaction followed by ordering in the Fe/Mo-01 crystallographic planes with the formation of various types of associations.

scholarly journals Сравнительный фотолюминесцентный анализ точечных дефектов в SiO-=SUB=-2-=/SUB=-, индуцированных имплантацией ионов Ar-=SUP=-+-=/SUP=- и облучением нейтронами

2019 ◽  
Vol 45 (5) ◽  
pp. 24
Author(s):  
И.П. Щербаков ◽  
А.Е. Чмель
Keyword(s):  
Silicon Dioxide ◽  
Amorphous Silicon ◽  
Point Defects ◽  
Photoluminescence Spectrum ◽  
Thermal Neutrons ◽  
Optical Transitions ◽  
Atomic Collisions ◽  
Amorphous Silicon Dioxide ◽  
Spectral Bands ◽  
Atomic Nuclei

AbstractThe introduction of Si^+ ions and ions of other elements into amorphous silicon dioxide during their interaction causes damage to the structural bonds, which is observed in the vibrational spectral bands. Pure SiO_2 has no optical transitions but the bands of induced point defects appear in the photoluminescence spectrum when ions/neutrons are introduced. The generation of photoluminescence-active defects by fluxes of Ar^+ ion and thermal neutrons is compared. It is shown that the nature of damage to the structure is associated with both the specifics of the synthesis/processing of the material and the features of the interaction between the substance and ions (atomic collisions) and neutrons (collisions with atomic nuclei).

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