scholarly journals Surface engineering to achieve organic ternary memory with a high device yield and improved performance

2017 ◽  
Vol 8 (3) ◽  
pp. 2344-2351 ◽  
Author(s):  
Xiang Hou ◽  
Xin Xiao ◽  
Qian-Hao Zhou ◽  
Xue-Feng Cheng ◽  
Jing-Hui He ◽  
...  

Organic memories fabricated on surface-engineered indium tin oxide show the highest ternary yield (82%) to date and better performance.

2009 ◽  
Vol 1212 ◽  
Author(s):  
Seungkeun Choi ◽  
William J Potscavage ◽  
Bernard Kippelen

AbstractWe report on the improved performance of large-area organic solar cells and modules by integrating metal grids directly with the indium tin oxide (ITO), thereby reducing the series resistance contribution from the ITO. Devices with different areas (0.1, 7, and 36.4 cm2) were prepared to study the area-dependency of the organic solar cells based on pentacene and C60 heterojunctions. Modules were prepared in which four individual cells (7 cm2) were connected in series and parallel. For the series connected modules, VOC scales linearly with the number of cells while parallel connected modules exhibited multiplied current density as expected.


2003 ◽  
Vol 785 ◽  
Author(s):  
Otto J. Gregory ◽  
Tao You

ABSTRACTA ceramic strain gage based on reactively sputtered indium tin oxide thin films is being developed to monitor the structural integrity of components employed in aerospace propulsion systems that operate at temperatures in excess of 1500°C. When relatively thick indium-tin-oxide (ITO) strain gages were prepared by reactive sputtering in oxygen:argon atmospheres and annealed in nitrogen, an extremely stable piezoresistive response was observed at temperatures as high as 1530°C. SEM and AFM of these sensor surfaces after high temperature exposure revealed a partially sintered microstructure with interconnected nanoporosity. Specifically, the microstructure consisted of a contiguous network of uniform sized ITO particles with well-defined necks between individual particles. When these microstructures were compared to those of relatively thin ITO sensors sputtered in nitrogen:argon:oxygen atmospheres, i.e. ITO films prepared in a nitrogen rich plasma, the average pore size and particle size was estimated to be an order of magnitude smaller than those associate with thick ITO sensors. In the nitrogen sputtered films, enhanced electrical conduction along the surfaces of the contiguous ITO particles resulted in a very stable and large piezoresistive response with a gage factor of 11.4 and a drift rate of 0.0001%/hour at 1560°C. The improved performance realized when the ITO films were processed in nitrogen may be extended to other ITO based sensors including gas sensors and the advantages of films processed in this manner will be discussed.


2001 ◽  
Author(s):  
Robert L. Nelson ◽  
James G. Grote ◽  
Jeremy B. Huddleston ◽  
John S. Zetts ◽  
Frank K. Hopkins

2020 ◽  
Vol 13 (4) ◽  
pp. 722-727
Author(s):  
ZHU Ye-xin ◽  
◽  
◽  
LI Ya-nan ◽  
SHI Wei-jie ◽  
...  

1986 ◽  
Vol 22 (23) ◽  
pp. 1266 ◽  
Author(s):  
D.G. Parker ◽  
P.G. Say

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