scholarly journals Luminescent properties of europium titanium phosphate thin films deposited by atomic layer deposition

RSC Advances ◽  
2017 ◽  
Vol 7 (13) ◽  
pp. 8051-8059 ◽  
Author(s):  
Michael N. Getz ◽  
Per-Anders Hansen ◽  
Helmer Fjellvåg ◽  
Ola Nilsen
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Structural Characterization ◽  
Atomic Layer ◽  
Luminescent Properties ◽  
Titanium Phosphate ◽  
The Novel ◽  
Layer Deposition ◽  
Novel Material

Optical and structural characterization of luminescent thin films of the novel material europium titanium phosphate, deposited by atomic layer deposition.

scholarly journals Tuning of Emission Wavelength of CaS:Eu by Addition of Oxygen Using Atomic Layer Deposition

Materials ◽  
2021 ◽  
Vol 14 (20) ◽  
pp. 5966
Author(s):  
José Rosa ◽  
Jouko Lahtinen ◽  
Jaakko Julin ◽  
Zhipei Sun ◽  
Harri Lipsanen
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Luminescent Properties ◽  
Blue Shift ◽  
Inorganic Materials ◽  
Emission Wavelength ◽  
Layer Deposition ◽  
Fine Control ◽  
Novel Material ◽  
Luminescent Centers

Atomic layer deposition (ALD) technology has unlocked new ways of manipulating the growth of inorganic materials. The fine control at the atomic level allowed by ALD technology creates the perfect conditions for the inclusion of new cationic or anionic elements of the already-known materials. Consequently, novel material characteristics may arise with new functions for applications. This is especially relevant for inorganic luminescent materials where slight changes in the vicinity of the luminescent centers may originate new emission properties. Here, we studied the luminescent properties of CaS:Eu by introducing europium with oxygen ions by ALD, resulting in a novel CaS:EuO thin film. We study structural and photoluminescent properties of two different ALD deposited Eu doped CaS thin films: Eu(thd)3 which reacted with H2S forming CaS:Eu phosphor, or with O3 originating a CaS:EuO phosphor. It was found that the emission wavelength of CaS:EuO was 625.8 nm whereas CaS:Eu was 647 nm. Thus, the inclusion of O2− ions by ALD in a CaS:Eu phosphor results in the blue-shift of 21.2 nm. Our results show that ALD can be an effective way to introduce additional elements (e.g., anionic elements) to engineer the physical properties (e.g., inorganic phosphor emissions) for photonics and optoelectronics.

Atomic Layer Deposition and Characterization of Erbium Oxide-Doped Zirconium Oxide Thin Films

2010 ◽  
Vol 157 (10) ◽  
pp. G193 ◽  
Author(s):  
Aile Tamm ◽  
Marianna Kemell ◽  
Jekaterina Kozlova ◽  
Timo Sajavaara ◽  
Massimo Tallarida ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Zirconium Oxide ◽  
Atomic Layer ◽  
Erbium Oxide ◽  
Oxide Thin Films ◽  
Layer Deposition

Atomic layer deposition and characterization of Ga-doped ZnO thin films

2007 ◽  
Vol 42 (1-6) ◽  
pp. 172-175 ◽  
Author(s):  
K. Saito ◽  
Y. Hiratsuka ◽  
A. Omata ◽  
H. Makino ◽  
S. Kishimoto ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Zno Thin Films ◽  
Layer Deposition ◽  
Doped Zno
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