Gate voltage-dependent magnetoresistance of Zn0.8Co0.2O:H

RSC Advances ◽  
2016 ◽  
Vol 6 (100) ◽  
pp. 97555-97559 ◽  
Author(s):  
Miyeon Cheon ◽  
Yong Chan Cho ◽  
Chae-Ryong Cho ◽  
Chul Hong Park ◽  
Se-Young Jeong
Keyword(s):  
Gate Voltage ◽  
Carrier Density ◽  
Voltage Dependent ◽  
Negative Gate Voltage

The magnetoresistance (MR) of ZnCoO:H was measured at 7 K to verify the MR dependency on carrier density. It was found that MR increased with negative gate voltage. This increase in MR is not caused by an increase in pMR, but by a decrease in nMR.

1200 V SiC IE-UMOSFET with Low On-Resistance and High Threshold Voltage

2017 ◽  
Vol 897 ◽  
pp. 497-500 ◽  
Author(s):  
Shinsuke Harada ◽  
Yusuke Kobayashi ◽  
A. Kinoshita ◽  
N. Ohse ◽  
Takahito Kojima ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Gate Voltage ◽  
Gate Oxide ◽  
Critical Issue ◽  
High Threshold ◽  
Trade Off ◽  
Negative Gate Voltage

A critical issue with the SiC UMOSFET is the need to develop a shielding structure for the gate oxide at the trench bottom without any increase in the JFET resistance. This study describes our new UMOSFET named IE-UMOSFET, which we developed to cope with this trade-off. A simulation showed that a low on-resistance is accompanied by an extremely low gate oxide field even with a negative gate voltage. The low RonA was sustained as Vth increases. The RonA values at VG=25 V (Eox=3.2 MV/cm) and VG=20V (Eox=2.5 MV/cm), respectively, for the 3mm x 3mm device were 2.4 and 2.8 mWcm2 with a lowest Vth of 2.4 V, and 3.1 and 4.4 mWcm2 with a high Vth of 5.9 V.

Assessment of off-state negative gate voltage requirements for IGBTs

1998 ◽  
Vol 13 (3) ◽  
pp. 436-440 ◽  
Author(s):  
N. McNeill ◽  
Kuang Sheng ◽  
B.W. Williams ◽  
S.J. Finney
Keyword(s):  
Gate Voltage ◽  
Negative Gate Voltage

Bootstrap Voltage and Dead Time Behavior in GaN DC–DC Buck Converter With a Negative Gate Voltage

2016 ◽  
Vol 31 (10) ◽  
pp. 7161-7170 ◽  
Author(s):  
Philipp Marc Roschatt ◽  
Stephen Pickering ◽  
Richard A. McMahon
Keyword(s):  
Gate Voltage ◽  
Dead Time ◽  
Buck Converter ◽  
Time Behavior ◽  
Negative Gate Voltage

Controlled Ambipolar Doping and Gate Voltage Dependent Carrier Diffusion Length in Lead Sulfide Nanowires

Nano Letters ◽  
2012 ◽  
Vol 12 (11) ◽  
pp. 5890-5896 ◽  
Author(s):  
Yiming Yang ◽  
Jiao Li ◽  
Hengkui Wu ◽  
Eunsoon Oh ◽  
Dong Yu
Keyword(s):  
Lead Sulfide ◽  
Gate Voltage ◽  
Diffusion Length ◽  
Carrier Diffusion ◽  
Voltage Dependent

scholarly journals Usage and Limitation of Standard Mobility Models for TCAD Simulation of Nanoscaled FD-SOI MOSFETs

2015 ◽  
Vol 2015 ◽  
pp. 1-9 ◽  
Author(s):  
A. Ciprut ◽  
A. Chelly ◽  
A. Karsenty
Keyword(s):  
Gate Voltage ◽  
Series Resistance ◽  
Mobility Models ◽  
Soi Mosfet ◽  
Semiempirical Approach ◽  
Voltage Dependent ◽  
Channel Thickness ◽  
Dependent Series ◽  
Tcad Simulation ◽  
Or Gate

TCAD tools have been largely improved in the last decades in order to support both process and device complementary simulations which are usually based on continuously developed models following the technology progress. In this paper, we compare between experimental and TCAD simulated results of two kinds of nanoscale devices: ultrathin body (UTB) and nanoscale Body (NSB) SOI-MOSFET devices, sharing the sameW/Lratio but having a channel thickness ratio of 10 : 1 (46 nm and 4.6 nm, resp.). The experimental transferI-Vcharacteristics were found to be surprisingly different by several orders of magnitude. We analyzed this result by considering the severe mobility degradation and the influence of a large gate voltage dependent series resistance (RSD). TCAD tools do not usually considerRSDto be either channel thickness or gate voltage dependent. After observing a clear discrepancy between the mobility values extracted from our measurements and those modeled by the available TCAD models, we propose a new semiempirical approach to model the transfer characteristics.

Gate Voltage Dependent 1/f Noise Variance Model in n-Channel MOSFETs

2014 ◽  
Author(s):  
Y. Arai ◽  
H. Aoki ◽  
F. Abe ◽  
S. Todoroki ◽  
R. Khatami ◽  
...  
Keyword(s):  
Gate Voltage ◽  
Noise Variance ◽  
Variance Model ◽  
Voltage Dependent
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