Growth and humidity-dependent electrical properties of bulk-like MoS2 thin films on Si

RSC Advances ◽  
2015 ◽  
Vol 5 (91) ◽  
pp. 74329-74335 ◽  
Author(s):  
Y. J. Liu ◽  
L. Z. Hao ◽  
W. Gao ◽  
Y. M. Liu ◽  
G. X. Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Molybdenum Disulfide ◽  
Room Temperature ◽  
Dc Magnetron Sputtering ◽  
Humidity Sensing ◽  
Si Substrates ◽  
Sensing Characteristics

Bulk-like molybdenum disulfide (MoS2) thin films were deposited on Si substrates using a dc magnetron sputtering technique and n-MoS2/p-Si junctions show excellent humidity sensing characteristics at room temperature.

Effects of annealing ambient on oxygen vacancies and phase transition temperature of VO2 thin films

RSC Advances ◽  
2016 ◽  
Vol 6 (83) ◽  
pp. 79383-79388 ◽  
Author(s):  
H. Y. Xu ◽  
Y. H. Huang ◽  
S. Liu ◽  
K. W. Xu ◽  
F. Ma ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Transition Temperature ◽  
Magnetron Sputtering ◽  
Direct Current ◽  
Room Temperature ◽  
Oxygen Vacancies ◽  
Dc Magnetron Sputtering ◽  
Si Substrates ◽  
Vo2 Thin Films

VO2 thin films are prepared on Si substrates by direct-current (DC) magnetron sputtering at room temperature and annealed in vacuum at different argon pressures.

Silicon Germanium Oxide (SixGeyO1-x-y) Infrared Sensitive Material for Uncooled Detectors

2010 ◽  
Vol 1245 ◽  
Author(s):  
Reza Anvari ◽  
Qi Cheng ◽  
Muhammad Lutful Hai ◽  
Truc Phan Bui ◽  
A. J. Syllaios ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Silicon Germanium ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Germanium Oxide ◽  
Temperature Coefficient Of Resistance ◽  
Sensitive Material

AbstractThis paper presents the formation and the characterization of silicon germanium oxide (SixGeyO1-x-y) infrared sensitive material for uncooled microbolometers. RF magnetron sputtering was used to simultaneously deposit Si and Ge thin films in an Ar/O2 environment at room temperature. The effects of varying Si and O composition on the thin film's electrical properties which include temperature coefficient of resistance (TCR) and resistivity were investigated. The highest achieved TCR and the corresponding resistivity at room temperature were -5.41 %/K and 3.16×103 ohm cm using Si0.039Ge0.875O0.086 for films deposited at room temperature.

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