scholarly journals The Importance of Oxygen Vacancies in Nanocrystalline WO3–x Thin Films Prepared by DC Magnetron Sputtering for Achieving High Photoelectrochemical Efficiency

2017 ◽  
Vol 121 (13) ◽  
pp. 7412-7420 ◽  
Author(s):  
Malin B. Johansson ◽  
Andreas Mattsson ◽  
Sten-Eric Lindquist ◽  
Gunnar A. Niklasson ◽  
Lars Österlund
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Oxygen Vacancies ◽  
Dc Magnetron Sputtering

Effects of annealing ambient on oxygen vacancies and phase transition temperature of VO2 thin films

RSC Advances ◽  
2016 ◽  
Vol 6 (83) ◽  
pp. 79383-79388 ◽  
Author(s):  
H. Y. Xu ◽  
Y. H. Huang ◽  
S. Liu ◽  
K. W. Xu ◽  
F. Ma ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Transition Temperature ◽  
Magnetron Sputtering ◽  
Direct Current ◽  
Room Temperature ◽  
Oxygen Vacancies ◽  
Dc Magnetron Sputtering ◽  
Si Substrates ◽  
Vo2 Thin Films

VO2 thin films are prepared on Si substrates by direct-current (DC) magnetron sputtering at room temperature and annealed in vacuum at different argon pressures.

The Effect of Annealing on the Electrical and Optical Properties of Cu-In-O Thin Films

2011 ◽  
Vol 287-290 ◽  
pp. 2125-2130
Author(s):  
Fan Ye ◽  
Xing Min Cai ◽  
Ping Fan ◽  
Dong Ping Zhang ◽  
Li Jun Liu
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Oxygen Vacancies ◽  
Optical Band Gap ◽  
Dc Magnetron Sputtering ◽  
Electrical And Optical Properties ◽  
Annealing Temperatures ◽  
Almost All

Cu-In-O composite thin films were deposited by reactive DC magnetron sputtering with two composite targets. The films were annealed in air at 400 °C for 3 hours and the effect of annealing was investigated. The samples are polycrystalline and contain mainly In2O3mixed with CuO. Annealing dose not further oxidize the samples, possibly due to the low annealing temperatures. Annealing slightly improves the crystalline quality of the films. Annealing increases the transmittances of almost all the samples by annihilating oxygen vacancies and hence widening the optical band gap. The conductivity of the samples is due to In2O3but is compensated by CuO inside the films and annealing greatly reduces the conductivity by driving out the oxygen vacancies. The In target partly masked with a Cu plate provides more convenience in adjusting the composition and properties of Cu-In-O films.

Preparing transparent cobalt-doped ZnO thin films by DC magnetron sputtering

2017 ◽  
Vol 4 (5) ◽  
pp. 6311-6316 ◽  
Author(s):  
Pongladda Panyajirawut ◽  
Nattha Pratumsuwan ◽  
Kornkamon Meesombad ◽  
Kridsana Thanawattana ◽  
Artit Chingsungnoen ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Zno Thin Films ◽  
Dc Magnetron Sputtering ◽  
Doped Zno

Characterization of Ti–Zr–V thin films deposited by DC and unipolar pulsed DC magnetron sputtering

Vacuum ◽  
2021 ◽  
Vol 188 ◽  
pp. 110200
Author(s):  
Sihui Wang ◽  
Wei Wei ◽  
Yonghao Gao ◽  
Haibin Pan ◽  
Yong Wang
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Dc Magnetron Sputtering ◽  
Pulsed Dc ◽  
Pulsed Dc Magnetron Sputtering

The influence of pressure and magnetic field on the deposition of epitaxial TiBx thin films from DC magnetron sputtering

Vacuum ◽  
2020 ◽  
Vol 177 ◽  
pp. 109355
Author(s):  
Nils Nedfors ◽  
Daniel Primetzhofer ◽  
Igor Zhirkov ◽  
Justinas Palisaitis ◽  
Per O.Å. Persson ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Dc Magnetron Sputtering

On‐axis dc magnetron sputtering of large area high quality YBa2Cu3O7superconducting thin films

1992 ◽  
Vol 61 (3) ◽  
pp. 348-350 ◽  
Author(s):  
Y. Z. Zhang ◽  
L. Li ◽  
Y. Y. Zhao ◽  
B. R. Zhao ◽  
J. W. Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Dc Magnetron Sputtering ◽  
Large Area ◽  
High Quality

Transparent Conductive Cu-In-O Thin Films Deposited by Reactive DC Magnetron Sputtering with Different Targets

2011 ◽  
Vol 239-242 ◽  
pp. 2752-2755
Author(s):  
Fan Ye ◽  
Xing Min Cai ◽  
Fu Ping Dai ◽  
Dong Ping Zhang ◽  
Ping Fan ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Optical Band Gap ◽  
Diffraction Peak ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Flow Rates ◽  
X Ray ◽  
Equal Distance ◽  
Transmittance Curve

Transparent conductive Cu-In-O thin films were deposited by reactive DC magnetron sputtering. Two types of targets were used. The first was In target covered with a fan-shaped Cu plate of the same radius and the second was Cu target on which six In grains of 1.5mm was placed with equal distance between each other. The samples were characterized with scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), UV/VIS spectrophotometer, four-probe measurement etc. SEM shows that the surfaces of all the samples are very smooth. EDX shows that the samples contain Cu, In as well as O, and different targets result in different atomic ratios of Cu to In. A diffraction peak related to rhombohedra-centered In2O3(012) is observed in the XRD spectra of all the samples. For both the two targets, the transmittance decreases with the increase of O2flow rates. The direct optical band gap of all the samples is also estimated according to the transmittance curve. For both the two targets, different O2flow rates result in different sheet resistances and conductivities. The target of Cu on In shows more controllability in the composition and properties of Cu-In-O films.

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