Structural and thermoelectric properties of n-type isocubanite CuFe2S3

2017 ◽  
Vol 4 (3) ◽  
pp. 424-432 ◽  
Author(s):  
Tristan Barbier ◽  
David Berthebaud ◽  
Raymond Frésard ◽  
Oleg I. Lebedev ◽  
Emmanuel Guilmeau ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Point Defects ◽  
Thermoelectric Performance ◽  
Effective Strategy

An effective strategy to enhance thermoelectric performance consists of scattering phonons by point defects, such as the ones intrinsic to the n-type isocubanite CuFe2S3.

Prediction of improved thermoelectric performance by ordering in double half-Heusler materials

2020 ◽  
Vol 8 (44) ◽  
pp. 23590-23598
Author(s):  
Shuping Guo ◽  
Zihang Liu ◽  
Zhenzhen Feng ◽  
Tiantian Jia ◽  
Shashwat Anand ◽  
...  
Keyword(s):  
Solid Solution ◽  
Electrical Properties ◽  
Thermoelectric Properties ◽  
Thermoelectric Performance ◽  
Effective Strategy ◽  
Ordered Structure

Forming ordered structure instead of solid solution is an effective strategy to maintain the excellent electrical properties and achieve high thermoelectric properties in the double HH compounds.

Effects of Nb doping on thermoelectric properties of Zn4Sb3 at high temperatures

2009 ◽  
Vol 24 (2) ◽  
pp. 430-435 ◽  
Author(s):  
D. Li ◽  
H.H. Hng ◽  
J. Ma ◽  
X.Y. Qin
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
High Temperatures ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Thermoelectric Performance ◽  
Temperature Range ◽  
A Value ◽  
Nb Doping ◽  
Thermal Conductivities

The thermoelectric properties of Nb-doped Zn4Sb3 compounds, (Zn1–xNbx)4Sb3 (x = 0, 0.005, and 0.01), were investigated at temperatures ranging from 300 to 685 K. The results showed that by substituting Zn with Nb, the thermal conductivities of all the Nb-doped compounds were lower than that of the pristine β-Zn4Sb3. Among the compounds studied, the lightly substituted (Zn0.995Nb0.005)4Sb3 compound exhibited the best thermoelectric performance due to the improvement in both its electrical resistivity and thermal conductivity. Its figure of merit, ZT, was greater than the undoped Zn4Sb3 compound for the temperature range investigated. In particular, the ZT of (Zn0.995Nb0.005)4Sb3 reached a value of 1.1 at 680 K, which was 69% greater than that of the undoped Zn4Sb3 obtained in this study.

Significantly optimized thermoelectric properties in high-symmetry cubic Cu7PSe6 compounds via entropy engineering

2018 ◽  
Vol 6 (15) ◽  
pp. 6493-6502 ◽  
Author(s):  
Rui Chen ◽  
Pengfei Qiu ◽  
Binbin Jiang ◽  
Ping Hu ◽  
Yiming Zhang ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Configurational Entropy ◽  
Thermoelectric Performance ◽  
High Symmetry ◽  
Type Compound

Via introducing Te into the argyrodite-type compound Cu7PSe6, the configurational entropy is increased yielding the significantly enhanced thermoelectric performance.

Ultra-low thermal conductivity and high thermoelectric performance realized in a Cu3SbSe4 based system

2021 ◽  
Vol 5 (1) ◽  
pp. 324-332
Author(s):  
J. M. Li ◽  
H. W. Ming ◽  
B. L. Zhang ◽  
C. J. Song ◽  
L. Wang ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Thermoelectric Properties ◽  
Thermoelectric Performance ◽  
Low Thermal Conductivity ◽  
Sn Doping ◽  
Temperature Range ◽  
System P

Cu3SbSe4-Based materials were fabricated through Sn-doping and AgSb0.98Ge0.02Se2 incorporation and their thermoelectric properties were investigated in the temperature range from 300 K to 675 K.

scholarly journals Benchmark characterization of the thermoelectric properties of individual single-crystalline CdS nanowires by a H-type sensor

RSC Advances ◽  
2017 ◽  
Vol 7 (41) ◽  
pp. 25298-25304 ◽  
Author(s):  
Haidong Wang ◽  
Dingshan Zheng ◽  
Xing Zhang ◽  
Hiroshi Takamatsu ◽  
Weida Hu
Keyword(s):  
Thermoelectric Properties ◽  
Thermoelectric Performance ◽  
Single Crystalline ◽  
Cds Nanowires ◽  
First Time

A precision H-type sensor method has been developed to measure the thermoelectric performance of individual single-crystalline CdS nanowires for the first time.

Influence of GeP precipitates on the thermoelectric properties of P-type GeTe and Ge0.9−xPxSb0.1Te compounds

CrystEngComm ◽  
2018 ◽  
Vol 20 (41) ◽  
pp. 6449-6457 ◽  
Author(s):  
J. Rajeev Gandhi ◽  
Raja Nehru ◽  
Sheng-Ming Chen ◽  
Raman Sankar ◽  
Khasim Saheb Bayikadi ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Point Defects ◽  
Secondary Phase ◽  
Rich Phase ◽  
System P ◽  
Scattering Effects ◽  
P Type

The incorporation of P in GST forms the secondary GeP rich phase. The presence of secondary phase and point defects (Sb and P) enhanced the additional scattering effects in the system.

scholarly journals Silver vacancy concentration engineering leading to the ultralow lattice thermal conductivity and improved thermoelectric performance of Ag1-xInTe2

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Yaqiong Zhong ◽  
Yong Luo ◽  
Xie Li ◽  
Jiaolin Cui
Keyword(s):  
Crystal Structure ◽  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Point Defects ◽  
Lattice Thermal Conductivity ◽  
Vacancy Concentration ◽  
Antisite Defect ◽  
Thermoelectric Performance ◽  
Callaway Model

AbstractAgInTe2 compound has not received enough recognition in thermoelectrics, possibly due to the fact that the presence of Te vacancy (VTe) and antisite defect of In at Ag site (InAg) degrades its electrical conductivity. In this work, we prepared the Ag1-xInTe2 compounds with substoichiometric amounts of Ag and observed an ultralow lattice thermal conductivity (κL = 0.1 Wm−1K−1) for the sample at x = 0.15 and 814 K. This leads to more than 2-fold enhancement in the ZT value (ZT = 0.62) compared to the pristine AgInTe2. In addition, we have traced the origin of the untralow κL using the Callaway model. The results attained in this work suggest that the engineering of the silver vacancy (VAg) concentration is still an effective way to manipulate the thermoelectric performance of AgInTe2, realized by the increased point defects and modified crystal structure distortion as the VAg concentration increases.

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