Lactone-fused electron-deficient building blocks for n-type polymer field-effect transistors: synthesis, properties, and impact of alkyl substitution positions

2016 ◽  
Vol 7 (12) ◽  
pp. 2264-2271 ◽  
Author(s):  
Xiao-Ye Wang ◽  
Meng-Wen Zhang ◽  
Fang-Dong Zhuang ◽  
Jie-Yu Wang ◽  
Jian Pei

Dilactone-based Pechmann dyes were incorporated into conjugated polymers for n-type field-effect transistors, providing a new design concept of electron-deficient building blocks for polymer semiconductors.

2014 ◽  
Vol 26 (6) ◽  
pp. 2147-2154 ◽  
Author(s):  
Seungjib Yum ◽  
Tae Kyu An ◽  
Xiaowei Wang ◽  
Wonho Lee ◽  
Mohammad Afsar Uddin ◽  
...  

2015 ◽  
Vol 3 (39) ◽  
pp. 10074-10078 ◽  
Author(s):  
Junwei Yang ◽  
Moyun Chen ◽  
Ji Ma ◽  
Wei Huang ◽  
Haoyun Zhu ◽  
...  

Novel boronate esters synthesized by the post-functionalization of PPEs and oligomers can provide an versatile platform for analogues.


2021 ◽  
Author(s):  
Yan-Cheng Lin ◽  
Megumi Matsuda ◽  
Kei-ichiro Sato ◽  
Chun-Kai Chen ◽  
Wei-Chen Yang ◽  
...  

The development of conjugated polymers through the statistical terpolymerization of conjugation break spacers (CBSs) has received great attention because of their synergistic potential in enhancing fracture strain and tensile strength....


Author(s):  
Guokeng Liu ◽  
Chunyang Jin ◽  
Binlai Hu ◽  
Lihua Zhang ◽  
Guozheng Zeng ◽  
...  

The remarkable properties of layered semiconductor nanosheets (LSNs), such as scalable production, bandgap tunability and mechanical flexibility have promoted them as promising building blocks for nanoelectronics and bioelectronics. However, it...


2001 ◽  
Vol 665 ◽  
Author(s):  
A. Ullmann ◽  
J. Ficker ◽  
W. Fix ◽  
H. Rost ◽  
W. Clemens ◽  
...  

ABSTRACTIntegrated plastic circuits (IPCs) will become an integral component of future low cost electronics. For low cost processes IPCs have to be made of all-polymer Transistors. We present our recent results on fabrication of Organic Field-Effect Transistors (OFETs) and integrated inverters. Top-gate transistors were fabricated using polymer semiconductors and insulators. The source-drain structures were defined by standard lithography of Au on a flexible plastic film, and on top of these electrodes, poly(3-alkylthiophene) (P3AT) as semiconductor, and poly(4-hydroxystyrene) (PHS) as insulator were homogeneously deposited by spin-coating. The gate electrodes consist of metal contacts. With this simple set-up, the transistors exhibit excellent electric performance with a high source-drain current at source - drain and gate voltages below 30V. The characteristics show very good saturation behaviour for low biases and are comparable to results published for precursor pentacene. With this setup we obtain a mobility of 0.2cm2/Vs for P3AT. Furthermore, we discuss organic integrated inverters exhibiting logic capability. All devices show shelf-lives of several months without encapsulation.


2010 ◽  
Author(s):  
Ralph Rieger ◽  
Dirk Beckmann ◽  
Alexey Mavrinskiy ◽  
Wojciech Pisula ◽  
Marcel Kastler ◽  
...  

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