Boronate ester post-functionalization of PPEs: versatile building blocks for poly(2,2′-(1-(4-(1,2-di(thiophen-2-yl)vinyl)phenyl)-2-(2,5-dioctylphenyl)ethene-1,2-diyl)dithiophene) and application in field effect transistors

2015 ◽  
Vol 3 (39) ◽  
pp. 10074-10078 ◽  
Author(s):  
Junwei Yang ◽  
Moyun Chen ◽  
Ji Ma ◽  
Wei Huang ◽  
Haoyun Zhu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Building Blocks ◽  
Boronate Esters ◽  
Boronate Ester ◽  
Post Functionalization

Novel boronate esters synthesized by the post-functionalization of PPEs and oligomers can provide an versatile platform for analogues.

Solution-processed and High-performance Ionic-paper Gated Field-effect Transistors from Two-dimensional Layered Semiconductor Nanosheets for High Thermal Resolution

2022 ◽  
Author(s):  
Guokeng Liu ◽  
Chunyang Jin ◽  
Binlai Hu ◽  
Lihua Zhang ◽  
Guozheng Zeng ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Building Blocks ◽  
Two Dimensional ◽  
Layered Semiconductor ◽  
Solution Processed ◽  
Scalable Production

The remarkable properties of layered semiconductor nanosheets (LSNs), such as scalable production, bandgap tunability and mechanical flexibility have promoted them as promising building blocks for nanoelectronics and bioelectronics. However, it...

Twisted olefinic building blocks for low bandgap polymers in solar cells and ambipolar field-effect transistors

2015 ◽  
Vol 54 (7) ◽  
pp. 889-899 ◽  
Author(s):  
Chien-Yang Chiu ◽  
Hengbin Wang ◽  
Hung Phan ◽  
Kazuya Shiratori ◽  
Thuc-Quyen Nguyen ◽  
...  
Keyword(s):  
Solar Cells ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Building Blocks ◽  
Low Bandgap

Synthesis, Characterization, and Field-Effect Transistors Properties of Novel Copolymers Incorporating Nonplanar Biindeno[2,1-b]thiophenylidene Building Blocks

2015 ◽  
Vol 48 (8) ◽  
pp. 2444-2453 ◽  
Author(s):  
Chao Li ◽  
Zupan Mao ◽  
Huajie Chen ◽  
Liping Zheng ◽  
Jianyao Huang ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Building Blocks

Naphtho[2,1-b:3,4-b′]bisthieno[3,2-b][1]benzothiophene-based semiconductors for organic field-effect transistors

2015 ◽  
Vol 3 (31) ◽  
pp. 8024-8029 ◽  
Author(s):  
Zhaoguang Li ◽  
Ji Zhang ◽  
Kai Zhang ◽  
Weifeng Zhang ◽  
Lei Guo ◽  
...  
Keyword(s):  
Organic Semiconductors ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Hole Mobility ◽  
Building Blocks ◽  
Organic Field Effect Transistors ◽  
Next Generation

Naphtho[2,1-b:3,4-b′]bisthieno[3,2-b][1]benzothiophene derivatives exhibiting a hole mobility of up to 0.25 cm2 V−1 s−1 show promise as useful building blocks to construct next-generation high performance organic semiconductors.

Lactone-fused electron-deficient building blocks for n-type polymer field-effect transistors: synthesis, properties, and impact of alkyl substitution positions

2016 ◽  
Vol 7 (12) ◽  
pp. 2264-2271 ◽  
Author(s):  
Xiao-Ye Wang ◽  
Meng-Wen Zhang ◽  
Fang-Dong Zhuang ◽  
Jie-Yu Wang ◽  
Jian Pei
Keyword(s):  
Conjugated Polymers ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Building Blocks ◽  
Design Concept ◽  
Polymer Semiconductors ◽  
Alkyl Substitution ◽  
Synthesis Properties

Dilactone-based Pechmann dyes were incorporated into conjugated polymers for n-type field-effect transistors, providing a new design concept of electron-deficient building blocks for polymer semiconductors.

scholarly journals ELECTRICAL TRANSPORT PROPERTIES AND FIELD EFFECT TRANSISTORS OF CARBON NANOTUBES

NANO ◽  
2006 ◽  
Vol 01 (01) ◽  
pp. 1-13 ◽  
Author(s):  
HONGJIE DAI ◽  
ALI JAVEY ◽  
ERIC POP ◽  
DAVID MANN ◽  
WOONG KIM ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Carbon Nanotube ◽  
Transport Properties ◽  
Electrical Transport ◽  
Field Effect ◽  
Ohmic Contacts ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Building Blocks ◽  
Electrical Transport Properties

This paper presents a review on our recent work on carbon nanotube field effect transistors, including the development of ohmic contacts, high-κ gate dielectric integration, chemical functionalization for conformal dielectric deposition and pushing the performance limit of nanotube FETs by channel length scaling. Due to the importance of high current operations of electronic devices, we also review the high field electrical transport properties of nanotubes on substrates and in freely suspended forms. Owing to their unique properties originating from their crystalline 1D structure and the strong covalent carbon–carbon bonding configuration, carbon nanotubes are highly promising as building blocks for future electronics. They are found to perform favorably in terms of ON-state current density as compared to the existing silicon technology, owing to their superb electron transport properties and compatibility with high-κ gate dielectrics. Future directions and challenges for carbon nanotube-based electronics are also discussed.

scholarly journals Characterizing the conformational free-energy landscape of RNA using single-molecule field-effect transistors

2022 ◽  
Author(s):  
Sukjin Steve Jang ◽  
Sarah Dubnik ◽  
Jason Hon ◽  
Colin Nuckolls ◽  
Ruben L Gonzalez
Keyword(s):  
Free Energy ◽  
Single Molecule ◽  
Time Resolution ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Energy Landscape ◽  
Building Blocks ◽  
High Time ◽  
Free Energy Landscape ◽  
High Time Resolution

We have developed and used high-time-resolution, single-molecule field-effect transistors (smFETs) to characterize the con-formational free-energy landscape of RNA stem-loops. Stem-loops are some of the most common RNA structural motifs and serve as building blocks for the formation of more complex RNA structures. Given their prevalence and integral role in RNA folding, the kinetics of stem-loop (un)folding has been extensively characterized using both experimental and computational approaches. Interestingly, these studies have reported vastly disparate timescales of (un)folding, which has been recently in-terpreted as evidence that (un)folding of even simple stem-loops occurs on a highly rugged conformational energy landscape. Because smFETs do not rely on fluorophore reporters of conformation or on the application of mechanical (un)folding forces, they provide a unique and complementary approach that has allowed us to directly monitor tens of thousands of (un)folding events of individual stem-loops at a 200 μs time resolution. Our results show that under our experimental conditions, stem-loops fold and unfold over a 1-200 ms timescale during which they transition between ensembles of unfolded and folded conformations, the latter of which is composed of at least two sub-populations. The 1-200 ms timescale of (un)folding we observe here indicates that smFETs report on complete (un)folding trajectories in which relatively extended unfolded con-formations of the RNA spend long periods of time wandering the free-energy landscape before sampling one of several mis-folded conformations or, alternatively, the natively folded conformation. Our findings demonstrate how the combination of single-molecule sensitivity and high time resolution makes smFETs unique and powerful tools for characterizing the con-formational free-energy landscape of RNA and highlight the extremely rugged landscape on which even the simplest RNA structural elements fold.

scholarly journals Metal Oxide Nanowires as Building Blocks for Optoelectronic Devices

2020 ◽  
Author(s):  
Andreea Costas ◽  
Nicoleta Preda ◽  
Camelia Florica ◽  
Ionut Enculescu
Keyword(s):  
Metal Oxide ◽  
Metal Oxides ◽  
Band Gap ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Optoelectronic Devices ◽  
Building Blocks ◽  
Oxide Nanowires ◽  
Metal Oxide Nanowires ◽  
Type Semiconductor

Metal oxide nanowires have become the new building blocks for the next generation optoelectronic devices due to their specific features such as quantum confinement and high aspect ratio. Thus, they can be integrated as active components in diodes, field effect transistors, photodetectors, sensors, solar cells and so on. ZnO, a n-type semiconductor with a direct wide band gap (3.3 eV) and CuO, a p-type semiconductor with a narrow band gap (1.2–1.5 eV), are two metal oxides which were recently in the spotlight of the researchers for applications in the optoelectronic devices area. Therefore, in this chapter we focused on ZnO and CuO nanowires, the metal oxides nanowire arrays being prepared by straightforward wet and dry methods. Further, in order to emphasize their intrinsic transport properties, lithographic and thin films deposition techniques were used to integrate single ZnO and CuO nanowires into diodes and field effect transistors.

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