p-Type transition-metal doping of large-area MoS2thin films grown by chemical vapor deposition

Nanoscale ◽  
2017 ◽  
Vol 9 (10) ◽  
pp. 3576-3584 ◽  
Author(s):  
E. Z. Xu ◽  
H. M. Liu ◽  
K. Park ◽  
Z. Li ◽  
Y. Losovyj ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Transition Metal ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Transition Metal Doping ◽  
Large Area ◽  
Metal Doping ◽  
Type Transition ◽  
P Type

Large-area synthesis of transition metal dichalcogenides via CVD and solution-based approaches and their device applications

Nanoscale ◽  
2021 ◽  
Author(s):  
Anh Tuan Hoang ◽  
Kairui Qu ◽  
Xiang Chen ◽  
Jong-Hyun Ahn
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Transition Metal ◽  
Vapor Deposition ◽  
Transition Metal Dichalcogenides ◽  
Chemical Vapor ◽  
Large Area ◽  
Wafer Scale ◽  
Metal Dichalcogenides ◽  
Device Applications

This article reviews the latest advances in the synthesis of wafer-scale thin films using chemical vapor deposition and solution-based methods and various device applications.

scholarly journals Correction: Controlled p-type substitutional doping in large-area monolayer WSe2 crystals grown by chemical vapor deposition

Nanoscale ◽  
2019 ◽  
Vol 11 (1) ◽  
pp. 365-365
Author(s):  
Sushil Kumar Pandey ◽  
Hussain Alsalman ◽  
Javad G. Azadani ◽  
Nezhueyotl Izquierdo ◽  
Tony Low ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Large Area ◽  
Substitutional Doping ◽  
P Type

Correction for ‘Controlled p-type substitutional doping in large-area monolayer WSe2 crystals grown by chemical vapor deposition’ by Stephen A. Campbell et al., Nanoscale, 2018, 10, 21374–21385.

Controlled p-type substitutional doping in large-area monolayer WSe2 crystals grown by chemical vapor deposition

Nanoscale ◽  
2018 ◽  
Vol 10 (45) ◽  
pp. 21374-21385 ◽  
Author(s):  
Sushil Kumar Pandey ◽  
Hussain Alsalman ◽  
Javad G. Azadani ◽  
Nezhueyotl Izquierdo ◽  
Tony Low ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Crystal Lattice ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Large Area ◽  
Tungsten Diselenide ◽  
2D Material ◽  
Substitutional Doping ◽  
P Type ◽  
Controlled Doping

Controlled doping of the p-type 2D material tungsten diselenide, done with niobium substitution for tungsten on the crystal lattice, can tune 2D transistor characteristics.

P-type Doping in Large-Area Monolayer MoS2 by Chemical Vapor Deposition

2020 ◽  
Vol 12 (5) ◽  
pp. 6276-6282 ◽  
Author(s):  
Mengge Li ◽  
Jiadong Yao ◽  
Xiaoxiang Wu ◽  
Shucheng Zhang ◽  
Boran Xing ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Monolayer Mos2 ◽  
Large Area ◽  
P Type

scholarly journals Thermodynamics Controlled Sharp Transformation from InP to GaP Nanowires via Introducing Trace Amount of Gallium

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Zhenzhen Tian ◽  
Xiaoming Yuan ◽  
Ziran Zhang ◽  
Wuao Jia ◽  
Jian Zhou ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Driving Force ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Nanowire Growth ◽  
Calphad Approach ◽  
Deposition Method ◽  
Large Area ◽  
Growth Phenomenon

AbstractGrowth of high-quality III–V nanowires at a low cost for optoelectronic and electronic applications is a long-term pursuit of research. Still, controlled synthesis of III–V nanowires using chemical vapor deposition method is challenge and lack theory guidance. Here, we show the growth of InP and GaP nanowires in a large area with a high density using a vacuum chemical vapor deposition method. It is revealed that high growth temperature is required to avoid oxide formation and increase the crystal purity of InP nanowires. Introduction of a small amount of Ga into the reactor leads to the formation of GaP nanowires instead of ternary InGaP nanowires. Thermodynamic calculation within the calculation of phase diagrams (CALPHAD) approach is applied to explain this novel growth phenomenon. Composition and driving force calculations of the solidification process demonstrate that only 1 at.% of Ga in the catalyst is enough to tune the nanowire formation from InP to GaP, since GaP nucleation shows a much larger driving force. The combined thermodynamic studies together with III–V nanowire growth studies provide an excellent example to guide the nanowire growth.

scholarly journals Practical Route for the Low-Temperature Growth of Large-Area Bilayer Graphene on Polycrystalline Nickel by Cold-Wall Chemical Vapor Deposition

ACS Omega ◽  
2021 ◽  
Author(s):  
Muhammad Aniq Shazni Mohammad Haniff ◽  
Nur Hamizah Zainal Ariffin ◽  
Poh Choon Ooi ◽  
Mohd Farhanulhakim Mohd Razip Wee ◽  
Mohd Ambri Mohamed ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Bilayer Graphene ◽  
Cold Wall ◽  
Polycrystalline Nickel ◽  
Large Area ◽  
Temperature Growth ◽  
Low Temperature Growth
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