scholarly journals Identification of a positive-Seebeck-coefficient exohedral fullerene

Nanoscale ◽  
2016 ◽  
Vol 8 (28) ◽  
pp. 13597-13602 ◽  
Author(s):  
Nasser Almutlaq ◽  
Qusiy Al-Galiby ◽  
Steven Bailey ◽  
Colin J. Lambert

If fullerene-based thermoelectricity is to become a viable technology, then fullerenes exhibiting both positive and negative Seebeck coefficients are needed.

2013 ◽  
Vol 12 (06) ◽  
pp. 1350057 ◽  
Author(s):  
HSIU-YA TASI ◽  
CHAOYUAN ZHU

Dielectric constants and Seebeck coefficients for semiconductor materials are studied by thermodynamic method plus ab initio quantum density functional theory (DFT). A single molecule which is formed in semiconductor material is treated in gas phase with molecular boundary condition and then electronic polarizability is directly calculated through Mulliken and atomic polar tensor (APT) density charges in the presence of the external electric field. This electronic polarizability can be converted to dielectric constant for solid material through the Clausius–Mossotti formula. Seebeck coefficient is first simulated in gas phase by thermodynamic method and then its value divided by its dielectric constant is regarded as Seebeck coefficient for solid materials. Furthermore, unit cell of semiconductor material is calculated with periodic boundary condition and its solid structure properties such as lattice constant and band gap are obtained. In this way, proper DFT function and basis set are selected to simulate electronic polarizability directly and Seebeck coefficient through chemical potential. Three semiconductor materials Mg 2 Si , β- FeSi 2 and SiGe are extensively tested by DFT method with B3LYP, BLYP and M05 functionals, and dielectric constants simulated by the present method are in good agreement with experimental values. Seebeck coefficients simulated by the present method are in reasonable good agreement with experiments and temperature dependence of Seebeck coefficients basically follows experimental results as well. The present method works much better than the conventional energy band structure theory for Seebeck coefficients of three semiconductors mentioned above. Simulation with periodic boundary condition can be generalized directly to treat with doped semiconductor in near future.


2019 ◽  
Vol 7 (9) ◽  
pp. 2646-2652 ◽  
Author(s):  
Khak Ho Lim ◽  
Ka Wai Wong ◽  
Yu Liu ◽  
Yu Zhang ◽  
Doris Cadavid ◽  
...  

The introduction of nonmetal nanoinclusions within Ag2Se results in an interphase band bending that promotes electron filtering and increase Seebeck coefficient. Similar loading of metal nanoinclusions provided an opposite effect-modulating free carrier concentration, as characterized by superior electrical conductivities and lower Seebeck coefficients.


2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Jyun-Min Lin ◽  
Ying-Chung Chen ◽  
Chi-Pi Lin

Bismuth telluride-based compounds are known to be the best thermoelectric materials within room temperature region, which exhibit potential applications in cooler or power generation. In this paper, thermal evaporation processes were adopted to fabricate the n-type Bi2Te3thin films on SiO2/Si substrates. The influence of thermal annealing on the microstructures and thermoelectric properties of Bi2Te3thin films was investigated in temperature range 100–250°C. The crystalline structures and morphologies were characterized by X-ray diffraction and field emission scanning electron microscope analyses. The Seebeck coefficients, electrical conductivity, and power factor were measured at room temperature. The experimental results showed that both the Seebeck coefficient and power factor were enhanced as the annealing temperature increased. When the annealing temperature increased to 250°C for 30 min, the Seebeck coefficient and power factor of n-type Bi2Te3-based thin films were found to be about −132.02 μV/K and 6.05 μW/cm·K2, respectively.


2019 ◽  
Vol 72 (9) ◽  
pp. 709 ◽  
Author(s):  
Abuzar Taheri ◽  
Douglas R. MacFarlane ◽  
Cristina Pozo-Gonzalo ◽  
Jennifer M. Pringle

The conversion of thermal energy to electricity using thermoelectrochemical cells (thermocells) is a developing approach to harvesting waste heat. The performance of a thermocell is highly dependent on the solvent used in the electrolyte, but the interplay of the various solvent effects is not yet well understood. Here, using the redox couples [Co(bpy)3][BF4]2/3 (bpy=2,2′-bipyridyl) and (Et4N)3/(NH4)4Fe(CN)6, which have been designed to allow dissolution in different solvent systems (aqueous, non-aqueous, and mixed solvent), the effect of solvent on the Seebeck coefficient (Se) and cell performance was studied. The highest Se for a cobalt-based redox couple measured thus far is reported. Different trends in the Seebeck coefficients of the two redox couples as a function of the ratio of organic solvent to water were observed. The cobalt redox couple produced a more positive Se in organic solvent than in water, whereas addition of water to organic solvent resulted in a more negative Se for Fe(CN)6 3−/4−. UV-vis and IR investigations of the redox couples indicate that Se is affected by changes in solvent–ligand interactions in the different solvent systems.


2015 ◽  
Vol 1760 ◽  
Author(s):  
Yoshisato Kimura ◽  
Yaw-Wang Chai ◽  
Toshinori Oniki ◽  
Takahiko Itagaki ◽  
Shinya Otani

ABSTRACTHalf-Heusler MNiSn (M=Ti, Zr, Hf) compounds are well-known, excellent n-type thermoelectric materials. The n-type Seebeck coefficients of ZrNiSn are reduced because of the precipitation of the metallic Heusler ZrNi2Sn phase. An excellent n-type Seebeck coefficient can be converted to p-type based on the vacancy site occupation by the solute Co atoms in the half-Heusler TiNiSn phase as well as ZrNiSn. The Heusler phase precipitates, including their precursor nano-structure in the half-Heusler matrix and the vacancy site occupation of the half-Heusler phase, are regarded as lattice defects based on the crystallographically and thermodynamically close relationship between half-Heusler and Heusler phases.


Author(s):  
B S Yilbas

Laser short-pulse heating of a lead—silicon—gold-layered structure is considered and non-equilibrium equation in the lattice and electron subsystems is formulated using the electron kinetic theory approach. The Seebeck coefficient in the metallic and silicon layers is also formulated. Electron and lattice site temperature rise in the subsystems and the Seebeck coefficients are computed for time exponentially decaying pulse. The study is extended to include the influence of the first layer (lead layer) thickness on temperature rise and the Seebeck coefficients. It is found that the lattice site temperature across the interface of the lead and silicon layers increases sharply. The Seebeck coefficient predicted in the silicon layer is higher than in the metallic layers in the structure.


2003 ◽  
Vol 793 ◽  
Author(s):  
C.-K. Huang ◽  
J.A. Herman ◽  
N. Myung ◽  
J. R. Lim ◽  
J.-P. Fleurial

ABSTRACTAt JPL, it is our desire to fabricate thermoelectric micro-devices for power generation and cooling applications using an electrochemical deposition (ECD) technique. We believe that the performance of our current micro-device developed is limited by the properties of the ECD materials. Therefore, the objective of this study is to develop ECD methods for obtaining n-type Bi2Te3 and p-type Bi2-xSbxTe3 thermoelectric materials with near bulk properties, as well as optimizing morphology and transport properties. The films of Bi2Te3 and Bi2-xSbxTe3 were initially obtained under various ECD conditions. Seebeck coefficients and transport properties were then measured along the direction parallel to the substrates before and after annealing at 250°C for 2hrs. From the data obtained, ECD n-Bi2Te3 material can achieve a high Seebeck coefficient (-189 μV/K) when it is deposited at –200 mV vs. SCE. The in-plane resistivity, in-plane mobility, and carrier concentration are 3.0 mohm-cm, 31 cm2 V−1 S−1, and 6.79 × 1019 cm−3, respectively. As for the p-type Bi2-xSbxTe3, it is possible to achieve a high Seebeck coefficient (+295 μV/K) when it is deposited at 0.3 mA/cm2. The in-plane resistivity, in-plane mobility, and carrier concentration are 9.8374 mohm-cm, 66.58 cm2 V−1 S−1, and 9.54 × 1018 cm−3, respectively. From the results of our preliminary study, we have found the conditions for depositing high quality Bi2Te3 and Bi2-xSbxTe3 materials with thermoelectric properties comparable to those of their state-of-the-art bulk samples.


2021 ◽  
Author(s):  
Yutian Wu ◽  
Chen Chen ◽  
Chengjun Wang ◽  
Peter Groche

The measurement of thermoelectric current is a new and effective method for inline wear detection in sheet metal forming. The measuring principle is based on the Seebeck effect, whose characteristic value, the Seebeck coefficient depends on the material composition. In the previous research of the authors, a boundary value of the thermoelectric value that separates the mild and severe wear was identified. Due to the large deviation of the Seebeck coefficient of the material used in sheet metal forming, it is worth discussing the influence of the Seebeck coefficient of the sheet metal material on the effectiveness and boundary value of the thermoelectric current for wear detection. In this paper, the measuring principle is first illustrated using an equation based on thermoelectricity. The Seebeck coefficients of the tools and sheet metals are then determined by a specifically designed device. At the same time, the wear tests for different materials are used to determine the boundary values for different tribological systems. Finally, the obtained Seebeck coefficient and boundary values are compared. From the results it can be concluded that the value of the measured Seebeck coefficients have a discernible effect on the boundary values, which provides a useful insight for inline wear diagnosis for practical applications.


2022 ◽  
Vol 6 (1) ◽  
pp. 25
Author(s):  
Oliver Voigt ◽  
Beate Krause ◽  
Petra Pötschke ◽  
Michael T. Müller ◽  
Sven Wießner

The thermoelectric behavior of polypropylene (PP) based nanocomposites containing single walled carbon nanotubes (SWCNTs) and five kinds of ionic liquids (Ils) dependent on composite composition and electron beam irradiation (EB) was studied. Therefore, several samples were melt-mixed in a micro compounder, while five Ils with sufficiently different anions and/or cations were incorporated into the PP/SWCNT composites followed by an EB treatment for selected composites. Extensive investigations were carried out considering the electrical, thermal, mechanical, rheological, morphological and, most significantly, thermoelectric properties. It was found that it is possible to prepare n-type melt-mixed polymer composites from p-type commercial SWCNTs with relatively high Seebeck coefficients when adding four of the selected Ils. The highest Seebeck coefficients achieved in this study were +49.3 µV/K (PP/2 wt.% SWCNT) for p-type composites and −27.6 µV/K (PP/2 wt.% SWCNT/4 wt.% IL type AMIM Cl) for n-type composites. Generally, the type of IL is decisive whether p- or n-type thermoelectric behavior is achieved. After IL addition higher volume conductivity could be reached. Electron beam treatment of PP/SWCNT leads to increased values of the Seebeck coefficient, whereas the EB treated sample with IL (AMIM Cl) shows a less negative Seebeck coefficient value.


Materials ◽  
2019 ◽  
Vol 12 (3) ◽  
pp. 497 ◽  
Author(s):  
Nikola Kanas ◽  
Sathya Singh ◽  
Magnus Rotan ◽  
Temesgen Desissa ◽  
Tor Grande ◽  
...  

High-temperature instability of the Ca3Co4−yO9+δ and CaMnO3−δ direct p-n junction causing the formation of Ca3Co2−xMnxO6 has motivated the investigation of the thermoelectric performance of this intermediate phase. Here, the thermoelectric properties comprising Seebeck coefficient, electrical conductivity, and thermal conductivity of Ca3Co2−xMnxO6 with x = 0.05, 0.2, 0.5, 0.75, and 1 are reported. Powders of the materials were synthesized by the solid-state method, followed by conventional sintering. The material Ca3CoMnO6 (x = 1) demonstrated a large positive Seebeck coefficient of 668 μV/K at 900 °C, but very low electrical conductivity. Materials with compositions with x < 1 had lower Seebeck coefficients and higher electrical conductivity, consistent with small polaron hopping with an activation energy for mobility of 44 ± 6 kJ/mol and where both the concentration and mobility of hole charge carriers were proportional to 1−x. The conductivity reached about 11 S·cm−1 at 900 °C for x = 0.05. The material Ca3Co1.8Mn0.2O6 (x = 0.2) yielded a maximum zT of 0.021 at 900 °C. While this value in itself is not high, the thermodynamic stability and self-assembly of Ca3Co2−xMnxO6 layers between Ca3Co4−yO9+δ and CaMnO3−δ open for new geometries and designs of oxide-based thermoelectric generators.


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