Large-area high-quality graphene on Ge(001)/Si(001) substrates

Nanoscale ◽  
2016 ◽  
Vol 8 (21) ◽  
pp. 11241-11247 ◽  
Author(s):  
I. Pasternak ◽  
P. Dabrowski ◽  
P. Ciepielewski ◽  
V. Kolkovsky ◽  
Z. Klusek ◽  
...  

Various experimental data revealing large-area high-quality graphene films grown by the CVD method on Ge(001)/Si(001) substrates are presented.

Science ◽  
2009 ◽  
Vol 324 (5932) ◽  
pp. 1312-1314 ◽  
Author(s):  
X. Li ◽  
W. Cai ◽  
J. An ◽  
S. Kim ◽  
J. Nah ◽  
...  

MRS Advances ◽  
2017 ◽  
Vol 2 (60) ◽  
pp. 3749-3754
Author(s):  
Maria Kim ◽  
Changfeng Li ◽  
Jannatul Susoma ◽  
Juha Riikonen ◽  
Harri Lipsanen

ABSTRACTNext-generation electronic devices are expected to demonstrate greater utility, efficiency and durability. Meanwhile, plastics such as polyethylene terephthalate (PET), polyethylene naphthalate (PEN) and variety of poly(para-xylylene) polymers enable transformational advantages to device shape, flexibility, weight, transparency and recyclability. Exhibiting a combination of outstanding mechanical, electrical, optical, and chemical properties of graphene with the plastic substrates could propose ideal material for the future flexible electronics. Chemical vapor deposition (CVD) allows cost-effective fabrication of a high-quality large-area graphene films, however, the critical issue is clean and noninvasive transfer of the films onto a desired substrate. The water-based delamination of CVD grown graphene on Cu can be considered as a “green” transfer process utilizing only hot deionized water. We investigated a method requiring only two essential steps: coating of 6-inch monolayer CVD graphene with transparent and flexible polymer, and Cu delamination in hot water. Proposed method is inexpensive, reproducible, environmentally friendly, waste-free and suitable for large-scale, high quality graphene. The transfer process demonstrated films with enhanced charge carrier mobility, high uniformity, free of mechanical defects, and sheet resistance as low as ∼50 Ω/sq with 96.5 % transparency at 550 nm wavelength.


RSC Advances ◽  
2018 ◽  
Vol 8 (35) ◽  
pp. 19846-19851 ◽  
Author(s):  
Dongyun Sun ◽  
Wei Wang ◽  
Zhaoping Liu

Graphene films grown by the chemical vapor deposition (CVD) method have attracted intensive attention due to their native advantages of both high quality and large quantity for commercial applications.


2018 ◽  
Vol 6 (45) ◽  
pp. 22437-22464 ◽  
Author(s):  
Afzal Khan ◽  
Mohammad Rezwan Habib ◽  
Rishi Ranjan Kumar ◽  
Sk Masiul Islam ◽  
V. Arivazhagan ◽  
...  

Metal-catalyzed chemical vapor deposition (CVD) growth of graphene is one of the most important techniques to produce high quality and large area graphene films.


Carbon ◽  
2013 ◽  
Vol 56 ◽  
pp. 271-278 ◽  
Author(s):  
Xu-Dong Chen ◽  
Zhi-Bo Liu ◽  
Chao-Yi Zheng ◽  
Fei Xing ◽  
Xiao-Qing Yan ◽  
...  

Nanomaterials ◽  
2021 ◽  
Vol 11 (9) ◽  
pp. 2423
Author(s):  
Jeonghwan Bae ◽  
Youngdong Yoo

Monolayer MoS2 can be used for various applications such as flexible optoelectronics and electronics due to its exceptional optical and electronic properties. For these applications, large-area synthesis of high-quality monolayer MoS2 is highly desirable. However, the conventional chemical vapor deposition (CVD) method using MoO3 and S powder has shown limitations in synthesizing high-quality monolayer MoS2 over a large area on a substrate. In this study, we present a novel carbon cloth-assisted CVD method for large-area uniform synthesis of high-quality monolayer MoS2. While the conventional CVD method produces thick MoS2 films in the center of the substrate and forms MoS2 monolayers at the edge of the thick MoS2 films, our carbon cloth-assisted CVD method uniformly grows high-quality monolayer MoS2 in the center of the substrate. The as-synthesized monolayer MoS2 was characterized in detail by Raman/photoluminescence spectroscopy, atomic force microscopy, and transmission electron microscopy. We reveal the growth process of monolayer MoS2 initiated from MoS2 seeds by synthesizing monolayer MoS2 with varying reaction times. In addition, we show that the CVD method employing carbon powder also produces uniform monolayer MoS2 without forming thick MoS2 films in the center of the substrate. This confirms that the large-area growth of monolayer MoS2 using the carbon cloth-assisted CVD method is mainly due to reducing properties of the carbon material, rather than the effect of covering the carbon cloth. Furthermore, we demonstrate that our carbon cloth-assisted CVD method is generally applicable to large-area uniform synthesis of other monolayer transition metal dichalcogenides, including monolayer WS2.


2010 ◽  
Vol 46 (9) ◽  
pp. 1422 ◽  
Author(s):  
Shishir Kumar ◽  
Niall McEvoy ◽  
Tarek Lutz ◽  
Gareth P. Keeley ◽  
Valeria Nicolosi ◽  
...  

Micromachines ◽  
2021 ◽  
Vol 12 (2) ◽  
pp. 137
Author(s):  
Ying Chen

2D WS2 is a promising candidate for the next generation nanoelectronics, spintronics, valleytronics, and optoelectronics. However, the uncontrollably large-area growth of WS2 nanosheets and their unsatisfactory performance of the photodetectors based on WS2 hindered its applications. Here, we proposed a CVD method using tungstic acid as the precursors to grow WS2 flakes. After being characterized by AFM, Raman, PL, and TEM, we found the as-grown WS2 flakes were high-quality structures. Then the photodetectors based on the as-grown WS2 were fabricated, which exhibited high responsivity (7.3 A W−1), a fast response rate (a response time of 5 ms and a recovery time of 7 ms), prefect external quantum efficiency (EQE) (1814%), and remarkable detectivity (D*) (3.4 × 1012 Jones). Our works provided a new CVD method to grow some high-quality WS2 nanosheets.


2005 ◽  
Vol 16 (10) ◽  
pp. 2072-2076 ◽  
Author(s):  
Fu Zhou ◽  
Huagui Zheng ◽  
Xuemei Zhao ◽  
Qixun Guo ◽  
Xiaomin Ni ◽  
...  

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