Straintronics in two-dimensional in-plane heterostructures of transition-metal dichalcogenides
2017 ◽
Vol 19
(1)
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pp. 663-672
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Keyword(s):
In 2D in-plane heterostructures of MoSe2/MoS2, MoS2/MoSe2, WSe2/MoS2 as well as MoS2/WSe2, intrinsic compressive or tensile strain is introduced due to lattice mismatch between two constituents, which significantly modifies the electronic properties, i.e., the straintronics.
2017 ◽
Vol 3
(6)
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pp. 1600468
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2007 ◽
pp. 1-29
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