scholarly journals Engineering the Electronic Properties of Two-Dimensional Transition Metal Dichalcogenides by Introducing Mirror Twin Boundaries

2017 ◽  
Vol 3 (6) ◽  
pp. 1600468 ◽  
Author(s):  
Hannu-Pekka Komsa ◽  
Arkady V. Krasheninnikov
2020 ◽  
Vol 10 ◽  
pp. 184798042095509
Author(s):  
Ankit Kumar Verma ◽  
Federico Raffone ◽  
Giancarlo Cicero

Two-dimensional transition metal dichalcogenides have gained great attention because of their peculiar physical properties that make them interesting for a wide range of applications. Lately, alloying between different transition metal dichalcogenides has been proposed as an approach to control two-dimensional phase stability and to obtain compounds with tailored characteristics. In this theoretical study, we predict the phase diagram and the electronic properties of Mo xTi1− xS2 at varying stoichiometry and show how the material is metallic, when titanium is the predominant species, while it behaves as a p-doped semiconductor, when approaching pure MoS2 composition. Correspondingly, the thermodynamically most stable phase switches from the tetragonal to the hexagonal one. Further, we present an example which shows how the proposed alloys can be used to obtain new vertical two-dimensional heterostructures achieving effective electron/hole separation.


Nanoscale ◽  
2022 ◽  
Author(s):  
Tao Wang ◽  
Xiaoxing Tan ◽  
Yadong Wei ◽  
Hao Jin

The electronic properties of layered two-dimensional (2D) transition-metal dichalcogenides (TMDs) van der Waals (vdW) heterostructures are strongly dependent on their layer number (N). However, it requires extremely large computational resources...


RSC Advances ◽  
2015 ◽  
Vol 5 (23) ◽  
pp. 17572-17581 ◽  
Author(s):  
Hongsheng Liu ◽  
Nannan Han ◽  
Jijun Zhao

Monolayer transition metal dichalcogenides (TMDs) stand out in two-dimensional (2D) materials due to their potential applications in future microelectronic and optoelectronic devices.


2020 ◽  
Vol 19 (8) ◽  
pp. 867-873 ◽  
Author(s):  
Xuezeng Tian ◽  
Dennis S. Kim ◽  
Shize Yang ◽  
Christopher J. Ciccarino ◽  
Yongji Gong ◽  
...  

2017 ◽  
Vol 19 (1) ◽  
pp. 663-672 ◽  
Author(s):  
Wei Wei ◽  
Ying Dai ◽  
Baibiao Huang

In 2D in-plane heterostructures of MoSe2/MoS2, MoS2/MoSe2, WSe2/MoS2 as well as MoS2/WSe2, intrinsic compressive or tensile strain is introduced due to lattice mismatch between two constituents, which significantly modifies the electronic properties, i.e., the straintronics.


ACS Nano ◽  
2021 ◽  
Author(s):  
Miao Zhang ◽  
Martina Lihter ◽  
Tzu-Heng Chen ◽  
Michal Macha ◽  
Archith Rayabharam ◽  
...  

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