Resistive switching of alkanethiolated nanoparticle monolayers patterned by electron-beam exposure

2016 ◽  
Vol 18 (33) ◽  
pp. 22783-22788 ◽  
Author(s):  
Patrick A. Reissner ◽  
Yuriy Fedoryshyn ◽  
Jean-Nicolas Tisserant ◽  
Andreas Stemmer
Keyword(s):  
Electron Beam ◽  
Gold Nanoparticle ◽  
Resistive Switching ◽  
Nanoscale Structures

Nanoscale structures are fabricated by the direct electron-beam exposure of 10 nm gold nanoparticle monolayers and development in an emulsion. We observe resistive switching in these structures of up to five orders of magnitude.

scholarly journals Electron-Beam-Induced Current and Cathodoluminescence Study of Dislocations in SrTiO3

Crystals ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 736
Author(s):  
Wei Yi ◽  
Jun Chen ◽  
Takashi Sekiguchi
Keyword(s):  
Electron Beam ◽  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Energy Levels ◽  
Induced Current ◽  
Temperature Dependent ◽  
Recombination Activity ◽  
Defect Energy ◽  
Electron Beam Induced Current ◽  
Cathodoluminescence Study

Electron-beam-induced current (EBIC) and cathodoluminescence (CL) have been applied to investigate the electrical and optical behaviors of dislocations in SrTiO3. The electrical recombination activity and defect energy levels of dislocations have been deduced from the temperature-dependent EBIC measurement. Dislocations contributed to resistive switching were clarified by bias-dependent EBIC. The distribution of oxygen vacancies around dislocations has been obtained by CL mapping. The correlation between switching, dislocation and oxygen vacancies was discussed.

scholarly journals Electron-beam-irradiated rhenium disulfide memristors with low variability for neuromorphic computing

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Sifan Li ◽  
Bochang Li ◽  
Xuewei Feng ◽  
Li Chen ◽  
Yesheng Li ◽  
...  
Keyword(s):  
Electron Beam ◽  
Resistive Switching ◽  
Neuromorphic Computing ◽  
Reset Voltage ◽  
Voltage Variation ◽  
Artificial Synapse ◽  
Metal Insulator Metal ◽  
Temporal And Spatial ◽  
Transition Voltage

AbstractState-of-the-art memristors are mostly formed by vertical metal–insulator–metal (MIM) structure, which rely on the formation of conductive filaments for resistive switching (RS). However, owing to the stochastic formation of filament, the set/reset voltage of vertical MIM memristors is difficult to control, which results in poor temporal and spatial switching uniformity. Here, a two-terminal lateral memristor based on electron-beam-irradiated rhenium disulfide (ReS2) is realized, which unveils a resistive switching mechanism based on Schottky barrier height (SBH) modulation. The devices exhibit a forming-free, stable gradual RS characteristic, and simultaneously achieve a small transition voltage variation during positive and negative sweeps (6.3%/5.3%). The RS is attributed to the motion of sulfur vacancies induced by voltage bias in the device, which modulates the ReS2/metal SBH. The gradual SBH modulation stabilizes the temporal variation in contrast to the abrupt RS in MIM-based memristors. Moreover, the emulation of long-term synaptic plasticity of biological synapses is demonstrated using the device, manifesting its potential as artificial synapse for energy-efficient neuromorphic computing applications.

In-Situ Electrical Addressing of One-Dimensional Gold Nanoparticle Assemblies

2008 ◽  
Vol 8 (1) ◽  
pp. 461-465 ◽  
Author(s):  
Kerstin Blech ◽  
Michael Noyong ◽  
Frederic Juillerat ◽  
Tomonobu Nakayama ◽  
Heinrich Hofmann ◽  
...  
Keyword(s):  
Gold Nanoparticle ◽  
Extreme Ultraviolet ◽  
Measuring Method ◽  
Interference Lithography ◽  
One Dimensional ◽  
Nanoscale Structures ◽  
Low Dimensional ◽  
Nanoparticle Chains ◽  
Scanning Electron

Substrates with 1-dimensional nanosize grooves were prepared using extreme-ultraviolet interference lithography (EUV-IL), wherein gold nanoparticles were self-assembled to form 1-dimensional structures. To measure the electrical properties of gold nanoparticle chains we introduce a novel in-situ measuring method based on nanomanipulator system in a scanning electron microscope. This method comprises enormous versatility for the precisely electrical addressing of low-dimensional nanoscale structures and may even be applied to routinely addressing of structures in the sub-10 nm range.

scholarly journals Pattern generation for direct-write three-dimensional nanoscale structures via focused electron beam induced deposition

2018 ◽  
Vol 9 ◽  
pp. 2581-2598 ◽  
Author(s):  
Lukas Keller ◽  
Michael Huth
Keyword(s):  
Electron Beam ◽  
3D Structure ◽  
Three Dimensional ◽  
Pattern Generation ◽  
Proximity Effects ◽  
Writing Strategies ◽  
Direct Write ◽  
Nanoscale Structures ◽  
Geometrical Description ◽  
Electron Beam Induced Deposition

Fabrication of three-dimensional (3D) nanoarchitectures by focused electron beam induced deposition (FEBID) has matured to a level that highly complex and functional deposits are becoming available for nanomagnetics and plasmonics. However, the generation of suitable pattern files that control the electron beam’s movement, and thereby reliably map the desired target 3D structure from a purely geometrical description to a shape-conforming 3D deposit, is nontrivial. To address this issue we developed several writing strategies and associated algorithms implemented in C++. Our pattern file generator handles different proximity effects and corrects for height-dependent precursor coverage. Several examples of successful 3D nanoarchitectures using different precursors are presented that validate the effectiveness of the implementation.

Densely integrated array of chemiresistor vapor sensors with electron-beam patterned monolayer-protected gold nanoparticle interface films

Lab on a Chip ◽  
2010 ◽  
Vol 10 (22) ◽  
pp. 3058 ◽  
Author(s):  
E. Covington ◽  
F. I. Bohrer ◽  
C. Xu ◽  
E. T. Zellers ◽  
Ç. Kurdak
Keyword(s):  
Electron Beam ◽  
Gold Nanoparticle ◽  
Vapor Sensors

Electron and Focused Ion Beams in Thermal Science and Engineering

2008 ◽  
Author(s):  
Tae-Youl Choi ◽  
Dimos Poulikakos
Keyword(s):  
Electron Beam ◽  
Heavy Ions ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
High Energy ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
Deposition Method ◽  
Science And Engineering ◽  
Nanoscale Structures

Focused-ion-beam (FIB) is a useful tool for defining nanoscale structures. High energy heavy ions inherently exhibit destructive nature. A less destructive tool has been devised by using electron beam. FIB is mainly considered as an etching tool, while electron beam can be used for deposition purpose. In this paper, both etching and deposition method are demonstrated for applications in thermal science. Thermal conductivity of nanostructures (such as carbon nanotubes) was measured by using the FIB (and electron beam) nanolithography technique. Boiling characteristics was studied in a submicron heater that could be fabricated by using FIB.

Computer model of a plasma layer formed by an electron beam

2021 ◽  
Author(s):  
D.V. Kolodko ◽  
I.A. Sorokin ◽  
V.P. Tarakanov
Keyword(s):  
Magnetic Field ◽  
Electron Beam ◽  
Longitudinal Magnetic Field ◽  
Plasma Layer ◽  
Chemical Reactor ◽  
Practical Significance ◽  
Beam Instability ◽  
Nanoscale Structures ◽  
Beam Plasma ◽  
Is Development

The problem of this work is development of scientific foundations of technological plasma processes for defect-free synthesis and processing of nanoscale structures for use in nanoelectronics. The goal of this work is development of a method for numerical calculation of the parameters of the ion flow to the sample for the real geometry of the beam-plasma installation. Results. We have created a numerical model for the development of a beam-plasma discharge by an electron beam in the absence of a buffer plasma and a longitudinal magnetic field. It is shown that the KARAT code allows us to solve the problem of developing beam instability in the absence of a buffer plasma. It was also shown that beam instability develops without a longitudinal magnetic field. The electric field created by the instability does not affect the peripheral plasma. The experimental verification of the numerical modeling results is carried out. The plasma concentration and electron temperature distributions obtained in the model are in qualitative agreement with the experimental ones. Practical significance. The model allows us to select the optimal modes of a plasma-chemical reactor based on a beamplasma discharge for the implementation of processes of defect-free ion-plasma treatment and synthesis of nanoscale structures.

Fabrication of a Photomask Containing Ultra-Fine Patterns of less than 100 nm through the Process Optimization of Electron Beam Lithography

2020 ◽  
Vol 25 (3) ◽  
pp. 1-7
Author(s):  
Sang-Chul Jeon
Keyword(s):  
Electron Beam ◽  
Proximity Effect ◽  
Electron Beam Lithography ◽  
Electron Beams ◽  
Correction Method ◽  
Processing Technique ◽  
Tolerance Range ◽  
Nanoscale Structures ◽  
Innovative Methods ◽  
Pattern Resolution

This study aims to develop an electronic beam lithography processing technique with the best pattern resolution among top-down machining methods and apply it to manufacture nanoscale structures. When electron beams enter a substrate with highly dense patterns, a pattern distortion occurs due to the electron beam proximity effect caused by the scattering of electron beams reaching the pattern region under the substrate. A silicon nanomold of line width 50 nm was produced and the pattern uniformity was satisfied within the tolerance range through a proper correction of the electron beam proximity effect. In addition, a photo mask with ultra-fine patterns of diameter less than 100 nm was manufactured for use in the semiconductor exposure process using the correction method of the electron beam proximity effect and innovative methods involving liftoff processes.

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