Exfoliated β-Ga2O3 nano-belt field-effect transistors for air-stable high power and high temperature electronics

2016 ◽  
Vol 18 (23) ◽  
pp. 15760-15764 ◽  
Author(s):  
Janghyuk Kim ◽  
Sooyeoun Oh ◽  
Michael A. Mastro ◽  
Jihyun Kim
Keyword(s):  
High Temperature ◽  
High Power ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Temperature Electronics

Exfoliated β-Ga2O3 nano-belt field-effect transistors for air-stable high power and high temperature electronics have been demonstrated.

Junction Field Effect Transistors For High-Temperature Or High-Power Electronics

1997 ◽  
Vol 483 ◽  
Author(s):  
J. C. Zolperw
Keyword(s):  
High Temperature ◽  
High Power ◽  
Field Effect ◽  
Elevated Temperatures ◽  
Field Effect Transistors ◽  
Current Gain ◽  
Semiconductor Interface ◽  
Transistor Channel ◽  
Semiconductor Junction ◽  
Junction Field Effect Transistors

AbstractJunction field effect transistors (JFETs) are attractive for high-temperature or highpower operation since they rely on a buried semiconductor junction, and not a metal semiconductor interface as in a metal semiconductor (MESFET) or heterojunction field effect transistor (HFET), for modulating the transistor channel. This is important since a metal/semiconductor interface often degrades at elevated temperatures, either due to the ambient temperature or to Joule heating at high current levels, while a buried semiconductor junction can withstand higher temperatures. In fact, for proper design, the JFET becomes limited by thermal carrier generation in the semiconductor and not metallurgical degradation of the gate electrode.In this talk an overview is given of JFET technology based on GaAs, SiC, and GaN. While impressive room temperature, high-frequency, results have been reported for GaAs JFET's with unit current gain cut-off frequencies up to 50 GHz, more work is needed to limit substrate conduction for optimum operation at 300 °C and above. For SiC JFETs, well behaved transistor operation has been maintained up to 600 °C, however, increased frequency performance is needed. More recently, a GaN JFET has also been demonstrated that is promising for similarly high temperature operation but is presently limited by buffer conduction. Future directions for each of these technologies, and potential extension to high power switching devices such as thyristors, will be presented at the conference.

10 kV, 87 mΩcm2 Normally-Off 4H-SiC Vertical Junction Field-Effect Transistors

2006 ◽  
Vol 527-529 ◽  
pp. 1187-1190 ◽  
Author(s):  
Yu Zhu Li ◽  
Petre Alexandrov ◽  
Jian Hui Zhang ◽  
Larry X. Li ◽  
Jian Hui Zhao
Keyword(s):  
High Temperature ◽  
High Power ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Current Density ◽  
Gate Oxide ◽  
High Current ◽  
Oxide Reliability ◽  
Blocking Voltage ◽  
Junction Field Effect Transistors

SiC JFET, compared with SiC MOSFET, is attractive for high power, high temperature applications because it is free of gate oxide reliability issues. Trenched-and-Implanted VJFET (TIVJFET) does not require epi-regrowth and is capable of high current density. In this work we demonstrate two trenched-and-implanted normally-off 4H-SiC vertical junction field-effect transistors (TI-VJFET), based on 120μm, 4.9×1014cm-3 and 100μm, 6×1014cm-3 drift layers. The corresponding devices showed blocking voltage (VB) of 11.1kV and specific on-resistance (RSP_ON) of 124m7cm2, and VB of 10kV and RSP_ON of 87m7cm2. A record-high value for VB 2/RSP_ON of 1149MW/cm2 was achieved for normally-off SiC FETs.

High-temperature modeling and characterization of 6H silicon carbide metal-oxide-semiconductor field-effect transistors

2005 ◽  
Vol 97 (4) ◽  
pp. 046106 ◽  
Author(s):  
Stephen K. Powell ◽  
Neil Goldsman ◽  
Aivars Lelis ◽  
James M. McGarrity ◽  
Flynn B. McLean
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Temperature Modeling

Extended High-Temperature Operation of Silicon Carbide CMOS Circuits for Venus Surface Application

2016 ◽  
Vol 13 (4) ◽  
pp. 143-154 ◽  
Author(s):  
Jim Holmes ◽  
A. Matthew Francis ◽  
Ian Getreu ◽  
Matthew Barlow ◽  
Affan Abbasi ◽  
...  
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
Integrated Circuit ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Logic Synthesis ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Timing Models ◽  
High Temperature Operation

In the last decade, significant effort has been expended toward the development of reliable, high-temperature integrated circuits. Designs based on a variety of active semiconductor devices including junction field-effect transistors and metal-oxide-semiconductor (MOS) field-effect transistors have been pursued and demonstrated. More recently, advances in low-power complementary MOS (CMOS) devices have enabled the development of highly integrated digital, analog, and mixed-signal integrated circuits. The results of elevated temperature testing (as high as 500°C) of several building block circuits for extended periods (up to 100 h) are presented. These designs, created using the Raytheon UK's HiTSiC® CMOS process, present the densest, lowest-power integrated circuit technology capable of operating at extreme temperatures for any period. Based on these results, Venus nominal temperature (470°C) transistor models and gate-level timing models were created using parasitic extracted simulations. The complete CMOS digital gate library is suitable for logic synthesis and lays the foundation for complex integrated circuits, such as a microcontroller. A 16-bit microcontroller, based on the OpenMSP 16-bit core, is demonstrated through physical design and simulation in SiC-CMOS, with an eye for Venus as well as terrestrial applications.

High-power AlGaN∕InGaN∕AlGaN∕GaN recessed gate heterostructure field-effect transistors

2005 ◽  
Vol 86 (14) ◽  
pp. 143512 ◽  
Author(s):  
R. S. Qhalid Fareed ◽  
X. Hu ◽  
A. Tarakji ◽  
J. Deng ◽  
R. Gaska ◽  
...  
Keyword(s):  
High Power ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Heterostructure Field Effect Transistors ◽  
Recessed Gate
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