scholarly journals Tuning of photocatalytic reduction by conduction band engineering of semiconductor quantum dots with experimental evaluation of the band edge potential

2016 ◽  
Vol 52 (36) ◽  
pp. 6185-6188 ◽  
Author(s):  
Takafumi Suzuki ◽  
Hiroto Watanabe ◽  
Yuya Oaki ◽  
Hiroaki Imai
Keyword(s):  
Quantum Dots ◽  
Conduction Band ◽  
Experimental Evaluation ◽  
Size Control ◽  
Semiconductor Quantum Dots ◽  
Photocatalytic Reduction ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Band Engineering

The conduction band edge (CBE) of WO3 quantum dots (QDs) was determined experimentally and engineered by size control to around one nanometer.

Modification of the conduction band edge energy via hybridization in quantum dots

2012 ◽  
Vol 101 (19) ◽  
pp. 193104 ◽  
Author(s):  
Joshua T. Wright ◽  
Robert W. Meulenberg
Keyword(s):  
Quantum Dots ◽  
Conduction Band ◽  
Band Edge ◽  
Conduction Band Edge

Silicon quantum dot sensors for an explosive taggant, 2,3-dimethyl-2,3-dinitrobutane (DMNB)

2016 ◽  
Vol 52 (53) ◽  
pp. 8207-8210 ◽  
Author(s):  
Jin Soo Kim ◽  
Bomin Cho ◽  
Soo Gyeong Cho ◽  
Honglae Sohn
Keyword(s):  
Quantum Dots ◽  
Electron Transfer ◽  
Quantum Dot ◽  
Cadmium Selenide ◽  
Conduction Band ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Cdse Qds ◽  
Silicon Quantum Dot ◽  
Pl Quenching

Conduction band edge dependent photoluminescence (PL) quenching by electron transfer was observed. PL from silicon quantum dots (Si QDs) was quenched by 2,3-dimethyl-2,3-dinitrobutane (DMNB), however PL from cadmium selenide (CdSe QDs) was not quenched by DMNB.

scholarly journals Conduction Band Edge Energy Profile Probed by Hall Offset Voltage in InGaZnO Thin Films

Micromachines ◽  
2020 ◽  
Vol 11 (9) ◽  
pp. 822
Author(s):  
Hyo-Jun Joo ◽  
Dae-Hwan Kim ◽  
Hyun-Seok Cha ◽  
Sang-Hun Song
Keyword(s):  
Magnetic Field ◽  
Electron Density ◽  
Conduction Band ◽  
Electron System ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Offset Voltage ◽  
Three Samples ◽  
Dimensional Electron System ◽  
Longitudinal Distance

We measured and analyzed the Hall offset voltages in InGaZnO thin-film transistors. The Hall offset voltages were found to decrease monotonously as the electron densities increased. We attributed the magnitude of the offset voltage to the misalignment in the longitudinal distance between the probing points and the electron density to Fermi energy of the two-dimensional electron system, which was verified by the coincidence of the Hall voltage with the perpendicular magnetic field in the tilted magnetic field. From these results, we deduced the combined conduction band edge energy profiles from the Hall offset voltages with the electron density variations for three samples with different threshold voltages. The extracted combined conduction band edge varied by a few tens of meV over a longitudinal distance of a few tenths of µm. This result is in good agreement with the value obtained from the analysis of percolation conduction.

Size-Dependent Valence and Conduction Band-Edge Energies of Semiconductor Nanocrystals

ACS Nano ◽  
2011 ◽  
Vol 5 (7) ◽  
pp. 5888-5902 ◽  
Author(s):  
Jacek Jasieniak ◽  
Marco Califano ◽  
Scott E. Watkins
Keyword(s):  
Conduction Band ◽  
Semiconductor Nanocrystals ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Size Dependent

scholarly journals Photocatalytic properties of a new Z-scheme system BaTiO3/In2S3 with a core–shell structure

RSC Advances ◽  
2019 ◽  
Vol 9 (20) ◽  
pp. 11377-11384 ◽  
Author(s):  
Kaili Wei ◽  
Baolai Wang ◽  
Jiamin Hu ◽  
Fuming Chen ◽  
Qing Hao ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Valence Band ◽  
Conduction Band ◽  
Shell Structure ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Core Shell ◽  
Valence Band Edge ◽  
Core Shell Structure ◽  
Positive Valence

It's highly desired to design an effective Z-scheme photocatalyst with excellent charge transfer and separation, a more negative conduction band edge (ECB) than O2/·O2− (−0.33 eV) and a more positive valence band edge (EVB) than ·OH/OH− (+2.27 eV).

ALD Deposited Al2 O3 Films on 6H-SiC(0001) after Annealing in Hydrogen Atmosphere

2005 ◽  
Vol 483-485 ◽  
pp. 559-562 ◽  
Author(s):  
Kun Yuan Gao ◽  
Thomas Seyller ◽  
Konstantin V. Emtsev ◽  
Lothar Ley ◽  
Florin Ciobanu ◽  
...  
Keyword(s):  
Conduction Band ◽  
Photoelectron Spectroscopy ◽  
Depth Profiling ◽  
Atomic Layer ◽  
Hydrogen Atmosphere ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Strong Increase ◽  
Admittance Spectroscopy ◽  
Spectroscopy Measurement

Atomic Layer Deposited Al2O3 films on hydrogen-terminated 6H-SiC(0001) were annealed in hydrogen atmosphere and characterized by admittance spectroscopy measurement and photoelectron spectroscopy (PES). The resultant density of interface trap (Dit) from admittance spectroscopy measurement is reduced near mid gap, but increases strongly towards the conduction band edge. Systematic PES measurements show that hydrogen annealing introduces Si4+ as a new component besides Si0 and Si+. Using different electron escape depths for photon electrons, depth profiling of Si in its different oxidation states was performed. The result indicates the formation of a top SiO2 layer and a rougher interfacial layer containing more Si+ and Si4+ which could be responsible for the strong increase of Dit just below the conduction band edge.

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