Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1−xN thin films at low temperatures
2014 ◽
Vol 2
(12)
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pp. 2123-2136
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Keyword(s):
The authors report on the use of hollow cathode plasma for low-temperature plasma-assisted atomic layer deposition (PA-ALD) of crystalline AlN, GaN and AlxGa1−xN thin films with low impurity concentrations.
Keyword(s):
2015 ◽
Vol 12
(4-5)
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pp. 394-398
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Keyword(s):
2010 ◽
Vol 157
(7)
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pp. P66
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2019 ◽
Vol 45
(6)
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pp. 7407-7412
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Keyword(s):
2018 ◽
Vol 6
(24)
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pp. 6471-6482
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