Tetrathiafulvalene-based nanocrystals: site-selective formation, device fabrication, and electrical properties

2015 ◽  
Vol 3 (34) ◽  
pp. 8986-8991 ◽  
Author(s):  
Hiroyuki Hasegawa
Keyword(s):  
Electrical Properties ◽  
Device Fabrication ◽  
Site Selective ◽  
Selective Formation

A tetrathiafulvalene (TTF)-based nanocrystal was selectively synthesized only in the gap between two electrodes using a nanoscale electrocrystallization. A two-terminal TTF-based device and an FET could be readily obtained via an eco-friendly nanofabrication process.

Templating nanotraffic light – dynamic tricoloured blinking silver nanoclusters on a graphene oxide film

2018 ◽  
Vol 6 (17) ◽  
pp. 4641-4648 ◽  
Author(s):  
S. X. Lim ◽  
Y. Z. Lee ◽  
N. Gao ◽  
J. Lu ◽  
Q. Xu ◽  
...  
Keyword(s):  
Thin Film ◽  
Silver Nanoparticles ◽  
Graphene Oxide ◽  
Oxide Film ◽  
Silver Nanoclusters ◽  
Site Selective ◽  
Selective Formation

Laser initiated site selective formation of dynamic tri-colour blinking silver nanoparticles on a transparent, flexible GO thin film.

Processing and Characterization of MOS Capacitors Fabricated on 2°-Off Axis 4H-SiC Epilayers

2016 ◽  
Vol 858 ◽  
pp. 663-666
Author(s):  
Marilena Vivona ◽  
Patrick Fiorenza ◽  
Tomasz Sledziewski ◽  
Alexandra Gkanatsiou ◽  
Michael Krieger ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Interface State ◽  
State Density ◽  
Metal Oxide Semiconductor ◽  
Interface State Density ◽  
Device Fabrication ◽  
Oxide Semiconductor ◽  
Mos Capacitors ◽  
Oxide Breakdown

In this work, the electrical properties of SiO2/SiC interfaces onto a 2°-off axis 4H-SiC layer were studied and validated through the processing and characterization of metal-oxide-semiconductor (MOS) capacitors. The electrical analyses on the MOS capacitors gave an interface state density in the low 1×1012 eV-1cm-2 range, which results comparable to the standard 4°-off-axis 4H-SiC, currently used for device fabrication. From Fowler-Nordheim analysis and breakdown measurements, a barrier height of 2.9 eV and an oxide breakdown of 10.3 MV/cm were determined. The results demonstrate the maturity of the 2°-off axis material and pave the way for the fabrication of 4H-SiC MOSFET devices on this misorientation angle.

scholarly journals Site-selective Formation of Polymer Ultrathin Films using the Ink-jet Method onto Patterned Fluoroalkylsilane Monolayer Substrate

Hyomen Kagaku ◽  
2006 ◽  
Vol 27 (2) ◽  
pp. 108-115 ◽  
Author(s):  
Masamichi MORITA ◽  
Shigekazu YASUTAKE ◽  
Hirotaka ISHIZUKA ◽  
Jun FUKAI ◽  
Atsushi TAKAHARA
Keyword(s):  
Ultrathin Films ◽  
Ink Jet ◽  
Site Selective ◽  
Selective Formation

Building Addressable Libraries: Site-Selective Formation of anN-Acyliminium Ion Intermediate

2008 ◽  
Vol 10 (12) ◽  
pp. 2501-2504 ◽  
Author(s):  
David Kesselring ◽  
Karl Maurer ◽  
Kevin D. Moeller
Keyword(s):  
Site Selective ◽  
Selective Formation

Site Selective Formation of Thymine Glycol-Containing Oligodeoxynucleotides by Oxidation with Osmium Tetroxide and Bipyridine-Tethered Oligonucleotide

2000 ◽  
Vol 122 (26) ◽  
pp. 6309-6310 ◽  
Author(s):  
Kazuhiko Nakatani ◽  
Shinya Hagihara ◽  
Shinsuke Sando ◽  
Hiroshi Miyazaki ◽  
Kazuhito Tanabe ◽  
...  
Keyword(s):  
Osmium Tetroxide ◽  
Thymine Glycol ◽  
Site Selective ◽  
Selective Formation

Corrigendum to “Site-selective formation of N-arylmethylimidazoles and C-arylimines in the reaction of 4,5-diamino-2,1,3-benzothiadiazole with aromatic aldehydes”

Tetrahedron ◽  
2004 ◽  
Vol 60 (44) ◽  
pp. 10117
Author(s):  
Akihito Saitoh ◽  
Keiji Okinaka ◽  
Koichi Suzuki ◽  
Akihiro Seno ◽  
Maki Kasahara ◽  
...  
Keyword(s):  
Aromatic Aldehydes ◽  
Site Selective ◽  
Selective Formation
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