Rational bridging affording luminogen with AIE features and high field effect mobility

2015 ◽  
Vol 3 (19) ◽  
pp. 4903-4909 ◽  
Author(s):  
Lifang Zhao ◽  
Yiliu Lin ◽  
Tong Liu ◽  
Hongxiang Li ◽  
Yu Xiong ◽  
...  
Keyword(s):  
Field Effect ◽  
High Field ◽  
High Mobility ◽  
Field Effect Mobility ◽  
Ethylene Group ◽  
Oled Performance

Rational bridging of triphenylamine units by an ethylene group generates 4TPAE with efficient solid emission, high mobility and excellent OLED performance.

Effect of High Temperature Forming Gas Annealing on Electrical Properties of 4H-SiC Lateral MOSFETs with Lanthanum Silicate and ALD SiO2 Gate Dielectric

2018 ◽  
Vol 924 ◽  
pp. 482-485
Author(s):  
Min Seok Kang ◽  
Kevin Lawless ◽  
Bong Mook Lee ◽  
Veena Misra
Keyword(s):  
Threshold Voltage ◽  
Interfacial Layer ◽  
Field Effect ◽  
Lanthanum Oxide ◽  
Gate Dielectric ◽  
High Mobility ◽  
High Threshold ◽  
Field Effect Mobility ◽  
The Impact ◽  
Lanthanum Silicate

We investigated the impact of an initial lanthanum oxide (La2O3) thickness and forming gas annealing (FGA) conditions on the MOSFET performance. The FGA has been shown to dramatically improve the threshold voltage (VT) stability of 4H-SiC MOSFETs. The FGA process leads to low VTshift and high field effect mobility due to reduction of the interface states density as well as traps by passivating the dangling bonds and active traps in the Lanthanum Silicate dielectrics. By optimizing the La2O3interfacial layer thickness and FGA condition, SiC MOSFETs with high threshold voltage and high mobility while maintaining minimal VTshift are realized.

scholarly journals Side-chain modulation of dithienofluorene-based copolymers to achieve high field-effect mobilities

2017 ◽  
Vol 8 (4) ◽  
pp. 2942-2951 ◽  
Author(s):  
Chia-Hao Lee ◽  
Yu-Ying Lai ◽  
Jhih-Yang Hsu ◽  
Po-Kai Huang ◽  
Yen-Ju Cheng
Keyword(s):  
Field Effect ◽  
High Field ◽  
Side Chain ◽  
Field Effect Mobility

A new polymerPDTFDPP20based on dithieno[3,2-b:6,7-b′]fluorene (DTF) unit was developed. This polymer with a face-on orientation has achieved a high field-effect mobility up to 5 cm2V−1s−1.

scholarly journals Unexpectedly high field-effect mobility of a soluble, low molecular weight oligoquaterthiophene fraction with low polydispersity

2008 ◽  
Vol 95 (1) ◽  
pp. 67-72 ◽  
Author(s):  
Patrick Pingel ◽  
Achmad Zen ◽  
Dieter Neher ◽  
Ingo Lieberwirth ◽  
Gerhard Wegner ◽  
...  
Keyword(s):  
Molecular Weight ◽  
Field Effect ◽  
High Field ◽  
Low Molecular Weight ◽  
Field Effect Mobility

High Mobility a-Si:H TFT Fabricated by Hot Wire Chemical Vapor Deposition

2010 ◽  
Vol 1245 ◽  
Author(s):  
Chun-Yuan Hsueh ◽  
Chieh-Hung Yang ◽  
Si-Chen Lee
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Field Effect ◽  
High Mobility ◽  
Chemical Vapor ◽  
Field Effect Mobility ◽  
Hot Wire ◽  
Low Threshold ◽  
Hydrogenated Amorphous ◽  
Very High

AbstractThe hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) having a very high field-effect mobility of 1.76 cm2/V-s and a low threshold voltage of 2.43 V have been fabricated successfully using the hot wire chemical vapor deposition (HWCVD).

High field-effect mobility in n-channel Si face 4H-SiC MOSFETs with gate oxide grown on aluminum ion-implanted material

2005 ◽  
Vol 26 (2) ◽  
pp. 96-98 ◽  
Author(s):  
G. Gudjonsson ◽  
H.O. Olafsson ◽  
F. Allerstam ◽  
P.-A. Nilsson ◽  
E.O. Sveinbjornsson ◽  
...  
Keyword(s):  
Field Effect ◽  
High Field ◽  
Gate Oxide ◽  
Field Effect Mobility ◽  
Aluminum Ion ◽  
Ion Implanted

Compressive Stressed P-Channel Polycrystalline-Silicon Thin-Film Transistors for High Field-Effect Mobility

2015 ◽  
Vol 36 (8) ◽  
pp. 793-795 ◽  
Author(s):  
Jae Hyo Park ◽  
Ki Hwan Seok ◽  
Hyung Yoon Kim ◽  
Sol Kyu Lee ◽  
Hee Jae Chae ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Field Effect ◽  
High Field ◽  
Field Effect Mobility ◽  
Silicon Thin Film
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