Solution-deposited pure selenide CIGSe solar cells from elemental Cu, In, Ga, and Se

2015 ◽  
Vol 3 (38) ◽  
pp. 19263-19267 ◽  
Author(s):  
Dandan Zhao ◽  
Qingwen Tian ◽  
Zhengji Zhou ◽  
Gang Wang ◽  
Yuena Meng ◽  
...  

A novel, robust and low-toxicity solution route to deposit CIGSe thin films for solar cell applications is proposed. The solvent of 1,2-ethanedithiol and 1,2-ethylenediamine is employed for the first time to simultaneously dissolve elemental Cu, In, Ga, and Se. With this solution-processed CIGSe thin film solar cell, an efficiency of 9.5% was achieved.

RSC Advances ◽  
2016 ◽  
Vol 6 (44) ◽  
pp. 37621-37627 ◽  
Author(s):  
Dhruba B. Khadka ◽  
SeongYeon Kim ◽  
JunHo Kim

We report a promising fabrication approach for the synthesis of Ge-alloyed Cu2Zn(GexSn1−x)Se4 (CZGTSe) thin films using molecular precursors by spray pyrolysis to obtain band gap tuned kesterite solar cells.


2020 ◽  
Vol 8 (40) ◽  
pp. 14066-14074
Author(s):  
Yuxiang Wang ◽  
Xinan Shi ◽  
Gang Wang ◽  
Junye Tong ◽  
Daocheng Pan

An all-inorganic BiI3 thin film solar cell with a structure of ITO/V2O5/BiI3/ZnO/Ag is fabricated.


2021 ◽  
Vol 114 ◽  
pp. 110947
Author(s):  
Eka Cahya Prima ◽  
Lydia Helena Wong ◽  
Ahmad Ibrahim ◽  
Nugraha ◽  
Brian Yuliarto

2021 ◽  
Author(s):  
Muhammad Aamir Shafi ◽  
Amal Bouich ◽  
Laiq Khan ◽  
Hanif Ullah ◽  
Julia Mari Guaita ◽  
...  

Abstract Electrochemical deposition was used to create a quaternary CZTS (Cu2ZnSnS4) kesterite thin layer. An aqueous solution of CZTS was used to deposit a thin layer over Indium Tin Oxide. The effects of deposition time (variation) on CZTS thin films under ambient conditions were investigated in this study. Several available characterization systems were used to study the samples as they were produced. The polycrystalline description of the layer is inveterate by X-ray diffraction (XRD). The SEM as well as AFM study show that deposition time improved surface morphology and topography of CZTS thin films which increase several nm in grain size. Furthermore, depending upon the deposition duration, the optical study reveals an acceptable bandgap in a range of 1.44 to 1.71 eV. Characteristics of high-quality CZTS absorber layers for solar cell applications are discovered to be affected by deposition time variation. To check the effect of this bandgap variation (1.44 to 1.71 eV) on the performance of a CZTS based thin film solar cell, a simulation software SCAPS-1D is being used.


Author(s):  
F. Bonnín-Ripoll ◽  
Ya. B. Martynov ◽  
R. G. Nazmitdinov ◽  
G. Cardona ◽  
R. Pujol-Nadal

A thorough optical + electrical + Lambertian scattering analysis determines the optimal thickness of a perovskite thin-film solar cell revealing its high efficiency with inorganic HTMs.


2018 ◽  
Vol 8 (7) ◽  
pp. 1195 ◽  
Author(s):  
Yanru Chen ◽  
Xianglin Mei ◽  
Xiaolin Liu ◽  
Bin Wu ◽  
Junfeng Yang ◽  
...  

The CdTe nanocrystal (NC) is an outstanding, low-cost photovoltaic material for highly efficient solution-processed thin-film solar cells. Currently, most CdTe NC thin-film solar cells are based on CdSe, ZnO, or CdS buffer layers. In this study, a wide bandgap and Cd-free ZnSe NC is introduced for the first time as the buffer layer for all solution-processed CdTe/ZnSe NC hetero-junction thin-film solar cells with a configuration of ITO/ZnO/ZnSe/CdTe/MoOx/Au. The dependence of the thickness of the ZnSe NC film, the annealing temperature and the chemical treatment on the performance of NC solar cells are investigated and discussed in detail. We further develop a ligand-exchanging strategy that involves 1,2-ethanedithiol (EDT) during the fabrication of ZnSe NC film. An improved power conversion efficiency (PCE) of 3.58% is obtained, which is increased by 16.6% when compared to a device without the EDT treatment. We believe that using ZnSe NC as the buffer layer holds the potential for developing high-efficiency, low cost, and stable CdTe NC-based solar cells.


RSC Advances ◽  
2016 ◽  
Vol 6 (8) ◽  
pp. 6562-6570 ◽  
Author(s):  
Fang Qin Zeng ◽  
Yan Qing Lai ◽  
Zi Li Han ◽  
Boon K. Ng ◽  
Zhi An Zhang ◽  
...  

A CZTSSe thin film solar cell was fabricated by a sol–gel method with an efficiency of 8.08%.


RSC Advances ◽  
2014 ◽  
Vol 4 (18) ◽  
pp. 9118-9125 ◽  
Author(s):  
Si-Nae Park ◽  
Shi-Joon Sung ◽  
Dae-Ho Son ◽  
Dae-Hwan Kim ◽  
Mungunshagai Gansukh ◽  
...  

Effective adding/removal of organic chemicals to/from CZTS precursor thin films for preparing uniform CZTS thin films with optimal photovoltaic properties was achieved by pre-annealing of CZTS precursors containing thiourea.


2021 ◽  
Author(s):  
Khalil ElKhamisy ◽  
Salah Elagooz ◽  
El-Sayed El-Rabaie ◽  
Hamdy Abdelhamid

Abstract Thin film Si solar cell and surface plasmon polaritons (SPPs) effects on solar cell efficiency, series resistance and shunt resistance are studied and analyzed in this work. The different surface plasmon polaritons (SPPs) shapes and their effects on the optical, electrical properties and therefore on the efficiency of thin film solar cell are studied in this work. This study is introduced using 3D numerical simulation results. The semiconductor and electromagnetic models are incorporated for studying the electrical and optical behaviors of the thin film solar cells, respectively. A 14.76% efficiency is obtained for triangle’ SPPs of about 1.07% of efficiency improvement compared to solar cell of SPPs free. The solar cell electrical parameters also are extracted in this work based on a single diode equivalent model. The series resistance is enhanced for solar cells of equilateral triangle SPP by 3% compared to the non-applied SPPs.


2020 ◽  
Vol 17 (4) ◽  
pp. 527-533
Author(s):  
Mohsen Sajadnia ◽  
Sajjad Dehghani ◽  
Zahra Noraeepoor ◽  
Mohammad Hossein Sheikhi

Purpose The purpose of this study is to design and optimize copper indium gallium selenide (CIGS) thin film solar cells. Design/methodology/approach A novel bi-layer CIGS thin film solar cell based on SnS is designed. To improve the performance of the CIGS based thin film solar cell a tin sulfide (SnS) layer is added to the structure, as back surface field and second absorbing layer. Defect recombination centers have a significant effect on the performance of CIGS solar cells by changing recombination rate and charge density. Therefore, performance of the proposed structure is investigated in two stages successively, considering typical and maximum reported trap density for both CIGS and SnS. To achieve valid results, the authors use previously reported experimental parameters in the simulations. Findings First by considering the typical reported trap density for both SnS and CIGS, high efficiency of 36%, was obtained. Afterward maximum reported trap densities of 1 × 1019 and 5.6 × 1015 cm−3 were considered for SnS and CIGS, respectively. The efficiency of the optimized cell is 27.17% which is achieved in CIGS and SnS thicknesses of cell are 0.3 and 0.1 µm, respectively. Therefore, even in this case, the obtained efficiency is well greater than previous structures while the absorbing layer thickness is low. Originality/value Having results similar to practical CIGS solar cells, the impact of the defects of SnS and CIGS layers was investigated. It was found that affixing SnS between CIGS and Mo layers causes a significant improvement in the efficiency of CIGS thin-film solar cell.


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