Self-sacrifice Te template synthesis of new phase PbmSb2nTem+3n nanorods via Pb2+/Sb3+ synergistic effect

RSC Advances ◽  
2015 ◽  
Vol 5 (127) ◽  
pp. 105379-105392 ◽  
Author(s):  
Ziming Su ◽  
Qun Wang ◽  
Jianhuan Li ◽  
Guangjun Zhang
Keyword(s):  
Synergistic Effect ◽  
Band Gap ◽  
Template Synthesis ◽  
Quantum Confinement ◽  
Quantum Confinement Effect ◽  
Confinement Effect ◽  
New Phase ◽  
Topotactic Transformation ◽  
Gap Values

New phase PbmSb2nTem+3n nanorods were synthesized using Te self-sacrifice template via Pb2+/Sb3+ synergistic effect topotactic transformation, which showed bigger band gap values due to the quantum confinement effect.

scholarly journals Augmented band gap tunability in indium-doped zinc sulfide nanocrystals

Nanoscale ◽  
2019 ◽  
Vol 11 (7) ◽  
pp. 3154-3163 ◽  
Author(s):  
Enrico Della Gaspera ◽  
Joseph Griggs ◽  
Taimur Ahmed ◽  
Sumeet Walia ◽  
Edwin L. H. Mayes ◽  
...  
Keyword(s):  
Band Gap ◽  
Zinc Sulfide ◽  
Quantum Confinement ◽  
Quantum Confinement Effect ◽  
Confinement Effect ◽  
Indium Doping ◽  
Zns Nanocrystals ◽  
Sulfide Nanocrystals

Indium doping in ZnS nanocrystals heavily affects the band gap beyond quantum confinement effect with unprecedented tunability in the UVA/UVB range.

Determination of band gap in polycrystalline Si/Ge thin film multilayers

2006 ◽  
Vol 21 (3) ◽  
pp. 623-631 ◽  
Author(s):  
S. Tripathi ◽  
R. Brajpuriya ◽  
C. Mukharjee ◽  
S.M. Chaudhari
Keyword(s):  
Thin Film ◽  
Particle Size ◽  
Band Gap ◽  
Quantum Confinement ◽  
Near Infrared ◽  
Quantum Confinement Effect ◽  
Multilayer Structures ◽  
Absorption Measurements ◽  
Gap Values

The valence band (VB) photoemission supported by ultraviolet–visible–near infrared spectroscopy techniques were used to determine the band gap values of polycrystalline Si and Ge single layers as well as of Si/Ge multilayer structures. The band gap values obtained from VB photoemission measurements for these structures were found to be much larger than their corresponding bulks and to match well with those determined from standard optical absorption measurements. In each case, the VB offset values were obtained by considering the corresponding VB maximum as a reference. The increase in band gap in case of thin single layers of Si and Ge with respect to bulks were interpreted in terms of quantum confinement effect, while in case of multilayer sample, the effect of various factors such as (i) intermixing leading to the formation of SiGe alloy, (ii) roughness at the interface, (iii) particle size, and (iv) strain seem to play an important role in the observed change in band gap.

Properties of Nanostructure Formed on SiO2/Si Interface by Laser Radiation

2007 ◽  
Vol 131-133 ◽  
pp. 559-562 ◽  
Author(s):  
Arthur Medvid ◽  
Igor Dmitruk ◽  
Pavels Onufrijevs ◽  
Iryna Pundyk
Keyword(s):  
Optical Properties ◽  
Laser Radiation ◽  
Band Gap ◽  
Quantum Confinement ◽  
Quantum Confinement Effect ◽  
Confinement Effect ◽  
Visible Range ◽  
Pulsed Nd:Yag Laser ◽  
Self Organized ◽  
Graded Band Gap

The aim of this work is to study optical properties of Si nanohills formed on the SiO2/Si interface by the pulsed Nd:YAG laser radiation. Nanohills which are self-organized on the surface of Si, are characterized by strong photoluminescence in the visible range of spectra with long wing in the red part of spectra. This peculiarity is explained by Quantum confinement effect in nanohillsnanowires with graded diameter. We have found a new method for graded band gap semiconductor formation using an elementary semiconductor. Graded change of band gap arises due to Quantum confinement effect.

Tunable Quantum Confinement Effect on Non-volatile Thin Film Polymer Memory Device

2008 ◽  
Author(s):  
Augustin J. Hong ◽  
Kang L. Wang ◽  
Wei Lek Kwan ◽  
Yang Yang ◽  
Dayanara Parra ◽  
...  
Keyword(s):  
Thin Film ◽  
Quantum Confinement ◽  
Quantum Confinement Effect ◽  
Memory Device ◽  
Confinement Effect ◽  
Film Polymer ◽  
Polymer Memory
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