Few-Layer Tin Sulfide: A New Black-Phosphorus-Analogue 2D Material with a Sizeable Band Gap, Odd–Even Quantum Confinement Effect, and High Carrier Mobility

2016 ◽  
Vol 120 (39) ◽  
pp. 22663-22669 ◽  
Author(s):  
Chao Xin ◽  
Jiaxin Zheng ◽  
Yantao Su ◽  
Shuankui Li ◽  
Bingkai Zhang ◽  
...  
Keyword(s):  
Band Gap ◽  
Quantum Confinement ◽  
Carrier Mobility ◽  
Quantum Confinement Effect ◽  
Black Phosphorus ◽  
Confinement Effect ◽  
Tin Sulfide ◽  
2D Material ◽  
High Carrier Mobility ◽  
High Carrier

Recent advances in doping engineering of black phosphorus

2020 ◽  
Vol 8 (11) ◽  
pp. 5421-5441 ◽  
Author(s):  
Haiguo Hu ◽  
Zhe Shi ◽  
Karim Khan ◽  
Rui Cao ◽  
Weiyuan Liang ◽  
...  
Keyword(s):  
Carrier Mobility ◽  
Black Phosphorus ◽  
Two Dimensional ◽  
Anisotropic Structure ◽  
Direct Bandgap ◽  
2D Material ◽  
Recent Advances ◽  
In Doping ◽  
High Carrier Mobility ◽  
High Carrier

Black phosphorus (BP), as a typical layered two-dimensional (2D) material, has attracted tremendous attention due to its high carrier mobility, unique in-plane anisotropic structure and tunable direct bandgap.

Germanene/GaGeTe heterostructure: a promising electric-field induced data storage device with high carrier mobility

2020 ◽  
Vol 22 (9) ◽  
pp. 5163-5169 ◽  
Author(s):  
Fu-Bao Zheng ◽  
Liang Zhang ◽  
Jin Zhang ◽  
Pei-ji Wang ◽  
Chang-Wen Zhang
Keyword(s):  
Electric Field ◽  
Band Gap ◽  
Data Storage ◽  
Carrier Mobility ◽  
Electronic Devices ◽  
Storage Device ◽  
New Type ◽  
High Carrier Mobility ◽  
High Carrier ◽  
Opening Up

Opening up a band gap without lowering high carrier mobility in germanene and finding suitable substrate materials to form van der Waals heterostructures have recently emerged as an intriguing way of designing a new type of electronic devices.

scholarly journals Augmented band gap tunability in indium-doped zinc sulfide nanocrystals

Nanoscale ◽  
2019 ◽  
Vol 11 (7) ◽  
pp. 3154-3163 ◽  
Author(s):  
Enrico Della Gaspera ◽  
Joseph Griggs ◽  
Taimur Ahmed ◽  
Sumeet Walia ◽  
Edwin L. H. Mayes ◽  
...  
Keyword(s):  
Band Gap ◽  
Zinc Sulfide ◽  
Quantum Confinement ◽  
Quantum Confinement Effect ◽  
Confinement Effect ◽  
Indium Doping ◽  
Zns Nanocrystals ◽  
Sulfide Nanocrystals

Indium doping in ZnS nanocrystals heavily affects the band gap beyond quantum confinement effect with unprecedented tunability in the UVA/UVB range.

Valley-selective circular dichroism and high carrier mobility of graphene-like BC6N

Nanoscale ◽  
2018 ◽  
Vol 10 (27) ◽  
pp. 13179-13186 ◽  
Author(s):  
Xiaobiao Liu ◽  
Xikui Ma ◽  
Han Gao ◽  
Xiaoming Zhang ◽  
Haoqiang Ai ◽  
...  
Keyword(s):  
Circular Dichroism ◽  
Band Gap ◽  
Carrier Mobility ◽  
Direct Band Gap ◽  
Black Phosphorene ◽  
Direct Band ◽  
High Carrier Mobility ◽  
High Carrier ◽  
Circular Dichroïsm

Graphene-like borocarbonitride (g-BC6N) has a direct-band gap of 1.833 eV, high carrier mobility comparable to that of black phosphorene and a pair of inequivalent valleys with opposite Berry curvatures in K and K′ points.

Novel two-dimensional semiconductor SnP3: high stability, tunable bandgaps and high carrier mobility explored using first-principles calculations

2018 ◽  
Vol 6 (25) ◽  
pp. 11890-11897 ◽  
Author(s):  
Songsong Sun ◽  
Fanchen Meng ◽  
Hongyan Wang ◽  
Hui Wang ◽  
Yuxiang Ni
Keyword(s):  
First Principles ◽  
Carrier Mobility ◽  
High Stability ◽  
Two Dimensional ◽  
First Principles Calculations ◽  
2D Material ◽  
High Carrier Mobility ◽  
High Carrier

A novel semiconducting 2D material based on monolayer and bilayer SnP3 is proposed using first-principles calculations.

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