Self-assembled nc-Si-QD/a-SiC thin films from planar ICP-CVD plasma without H2-dilution: a combination of wide optical gap, high conductivity and preferred 〈220〉 crystallographic orientation, uniquely appropriate for nc-Si solar cells

RSC Advances ◽  
2016 ◽  
Vol 6 (5) ◽  
pp. 3860-3869 ◽  
Author(s):  
Debajyoti Das ◽  
Debjit Kar
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Crystallographic Orientation ◽  
High Conductivity ◽  
Rapid Synthesis ◽  
Optical Gap ◽  
Si Solar Cells ◽  
Self Assembled

Spontaneous miniaturization and rapid synthesis of self-assembled nc-Si-QDs of 〈220〉 orientation in high crystalline nc-Si-QD/a-SiC thin films of high conductivity and wide optical gap is obtained in ICP-CVD, from (SiH4 + CH4)-plasma, without H2-dilution.

scholarly journals Recent Advances in and New Perspectives on Crystalline Silicon Solar Cells with Carrier-Selective Passivation Contacts

Crystals ◽  
2018 ◽  
Vol 8 (11) ◽  
pp. 430 ◽  
Author(s):  
Cao Yu ◽  
Shengzhi Xu ◽  
Jianxi Yao ◽  
Shuwei Han
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
High Efficiency ◽  
Crystalline Silicon ◽  
Global Market ◽  
Crystalline Silicon Solar Cells ◽  
Novel Device ◽  
Si Solar Cells ◽  
Passivation Layers ◽  
Conversion Efficiencies

Crystalline silicon (c-Si) is the dominating photovoltaic technology today, with a global market share of about 90%. Therefore, it is crucial for further improving the performance of c-Si solar cells and reducing their cost. Since 2014, continuous breakthroughs have been achieved in the conversion efficiencies of c-Si solar cells, with a current record of 26.6%. The great efficiency boosts originate not only from the materials, including Si wafers, emitters, passivation layers, and other functional thin films, but also from novel device structures and an understanding of the physics of solar cells. Among these achievements, the carrier-selective passivation contacts are undoubtedly crucial. Current carrier-selective passivation contacts can be realized either by silicon-based thin films or by elemental and/or compound thin films with extreme work functions. The current research and development status, as well as the future trends of these passivation contact materials, structures, and corresponding high-efficiency c-Si solar cells will be summarized.

scholarly journals Low-Temperature, Chemically Grown Titanium Oxide Thin Films with a High Hole Tunneling Rate for Si Solar Cells

Energies ◽  
2016 ◽  
Vol 9 (6) ◽  
pp. 402 ◽  
Author(s):  
Yu-Tsu Lee ◽  
Fang-Ru Lin ◽  
Ting-Chun Lin ◽  
Chien-Hsun Chen ◽  
Zingway Pei
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Low Temperature ◽  
Titanium Oxide ◽  
Tunneling Rate ◽  
Oxide Thin Films ◽  
Si Solar Cells

Comparison of AZO, GZO, and AGZO Thin Films TCOs Applied for a-Si Solar Cells

2012 ◽  
Vol 159 (6) ◽  
pp. H599-H604 ◽  
Author(s):  
Y. C. Lin ◽  
T. Y. Chen ◽  
L. C. Wang ◽  
S. Y. Lien
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Si Solar Cells
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