Opto-electronic properties of P-doped nc-Si–QD/a-SiC:H thin films as foundation layer for all-Si solar cells in superstrate configuration

2016 ◽  
Vol 120 (2) ◽  
pp. 025102 ◽  
Author(s):  
Debjit Kar ◽  
Debajyoti Das
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Electronic Properties ◽  
Si Solar Cells

scholarly journals Post-Annealing Effect on Optical and Electronic Properties of Thermally Evaporated MoOX Thin Films as Hole-Selective Contacts for p-Si Solar Cells

2021 ◽  
Author(s):  
Yuanwei Jiang ◽  
Shuangying Cao ◽  
Linfeng Lu ◽  
Guanlin Du ◽  
Yinyue Lin ◽  
...  
Keyword(s):  
Solar Cells ◽  
Work Function ◽  
Electronic Properties ◽  
Crystalline Silicon ◽  
Annealing Treatment ◽  
Crystalline Silicon Solar Cells ◽  
Post Annealing ◽  
Si Solar Cells ◽  
Optical And Electronic Properties ◽  
Large Work

Abstract Owing to its large work function, MoOX has been widely used for hole-selective contact in both thin film and crystalline silicon solar cells. In this work, thermally evaporated MoOX films are employed on the rear sides of p-type crystalline silicon (p-Si) solar cells, where the optical and electronic properties of the MoOX films as well as the corresponding device performances are investigated as a function of post-annealing treatment. The MoOX film annealed at 100oC shows the highest work function and proves the best hole selectivity based on the results of energy band simulation and contact resistivity measurements. The full rear p-Si/MoOX/Ag contacted solar cells demonstrate the best performance with an efficiency of 19.19%, which is the result of the combined influence of MoOX’s hole selectivity and passivation ability.

scholarly journals Recent Advances in and New Perspectives on Crystalline Silicon Solar Cells with Carrier-Selective Passivation Contacts

Crystals ◽  
2018 ◽  
Vol 8 (11) ◽  
pp. 430 ◽  
Author(s):  
Cao Yu ◽  
Shengzhi Xu ◽  
Jianxi Yao ◽  
Shuwei Han
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
High Efficiency ◽  
Crystalline Silicon ◽  
Global Market ◽  
Crystalline Silicon Solar Cells ◽  
Novel Device ◽  
Si Solar Cells ◽  
Passivation Layers ◽  
Conversion Efficiencies

Crystalline silicon (c-Si) is the dominating photovoltaic technology today, with a global market share of about 90%. Therefore, it is crucial for further improving the performance of c-Si solar cells and reducing their cost. Since 2014, continuous breakthroughs have been achieved in the conversion efficiencies of c-Si solar cells, with a current record of 26.6%. The great efficiency boosts originate not only from the materials, including Si wafers, emitters, passivation layers, and other functional thin films, but also from novel device structures and an understanding of the physics of solar cells. Among these achievements, the carrier-selective passivation contacts are undoubtedly crucial. Current carrier-selective passivation contacts can be realized either by silicon-based thin films or by elemental and/or compound thin films with extreme work functions. The current research and development status, as well as the future trends of these passivation contact materials, structures, and corresponding high-efficiency c-Si solar cells will be summarized.

scholarly journals Low-Temperature, Chemically Grown Titanium Oxide Thin Films with a High Hole Tunneling Rate for Si Solar Cells

Energies ◽  
2016 ◽  
Vol 9 (6) ◽  
pp. 402 ◽  
Author(s):  
Yu-Tsu Lee ◽  
Fang-Ru Lin ◽  
Ting-Chun Lin ◽  
Chien-Hsun Chen ◽  
Zingway Pei
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Low Temperature ◽  
Titanium Oxide ◽  
Tunneling Rate ◽  
Oxide Thin Films ◽  
Si Solar Cells

The Effect of the Doping Profile in Aluminum Back-Surface-Field on the Electronic Properties of c-Si Solar Cells

2010 ◽  
Vol 654-656 ◽  
pp. 1690-1693
Author(s):  
Ji Cheng Zhou ◽  
Yong Min Chen
Keyword(s):  
Solar Cells ◽  
Electronic Properties ◽  
Doping Profile ◽  
Back Surface ◽  
Optimum Thickness ◽  
Atomic Concentration ◽  
Si Solar Cells ◽  
Surface Field ◽  
Maximum Value ◽  
Heavily Doped

The electronic properties of the solar cells were greatly influenced by the aluminum atomic concentration in Al-BSF region under that the Al-BSF is doped heavily. The effects of the dopincg profile in heavily-doped Al-BSF on electronic properties of n+pp+ monocrystalline solar cells were investigated by PC1D. The results show that the electronic properties of solar cells are almost independent of the doping profile of the Al-BSF, but are more or less affected by the BSF profile if the solar cell back surface is passivated well with the BSRV less than ~105cm/s. When the sheet resistance is about between 5 and 30Ω/□, the conversion efficiency can reach the maximum value. And the optimum thickness of Al-BSF is about between 10~15μm.

Sign in / Sign up

Export Citation Format

Share Document