scholarly journals Stable negative differential resistance in porphyrin based σ–π–σ monolayers grafted on silicon

RSC Advances ◽  
2015 ◽  
Vol 5 (62) ◽  
pp. 50234-50244 ◽  
Author(s):  
Kavita Garg ◽  
Chiranjib Majumder ◽  
Shiv Kumar Gupta ◽  
Dinesh Kumar Aswal ◽  
Sandip Kumar Nayak ◽  
...  
Keyword(s):  
Negative Differential Resistance ◽  
Room Temperature ◽  
Differential Resistance ◽  
Porphyrin Moiety ◽  
Peak To Valley Ratio

Two Si–porphyrin hybrid monolayers showed room temperature negative differential resistance (NDR) property. The monolayer with a fluorophenyl porphyrin moiety showed a better peak-to-valley ratio due to compact packing.

scholarly journals Negative Differential Resistance Behavior in Delta-Doped AlInP Structure Grown by MOCVD

2002 ◽  
Vol 25 (3) ◽  
pp. 245-248
Author(s):  
K. F. Yarn
Keyword(s):  
Schottky Diode ◽  
Negative Differential Resistance ◽  
Room Temperature ◽  
Thermionic Emission ◽  
Differential Resistance ◽  
Tunneling Effect ◽  
Peak Current Density ◽  
Interband Tunneling ◽  
First Time ◽  
Peak To Valley Ratio

An AlInP delta-doped schottky diode exhibiting negative differential resistance (NDR) behavior is demonstrated for the first time. The NDR characteristics with a peak to valley ratio of 5.5 and peak current density of1KA/cm2were achieved at room temperature. In addition, the maximum available power is estimated up to5W/cm2. The mechanism for such performance is phenomenologically analyzed by the combination of resonant interband tunneling (RIT) and thermionic emission processes associated with tunneling effect on the metal-semiconductor (MS) interface.

Room Temperature Negative Differential Resistance in Nanoscale Molecular

1999 ◽  
Vol 582 ◽  
Author(s):  
J. Chen ◽  
W. Wang ◽  
M. A. Reed ◽  
A. M. Rawlett ◽  
D. W. Price ◽  
...  
Keyword(s):  
Low Temperature ◽  
Negative Differential Resistance ◽  
Room Temperature ◽  
Active Component ◽  
Differential Resistance ◽  
Molecular Devices ◽  
Self Assembled Monolayer ◽  
Redox Center ◽  
Current Voltage ◽  
Peak To Valley Ratio

ABSTRACTMolecular devices utilizing active self-assembled monolayer (SAM) (containing nitroamine (2′-amino-4-ethynylphenyl-4′-ethynylphenyl-5′-nitro-1-benzenethiolate) and nitro (4-ethynylphenyl-4′-ethynylphenyl-2′-nitro-1-benzenethiolate) redox center) as the active component are reported. Current-voltage measurements of the devices exhibited negative differential resistance at room temperature and an on-off peak-to-valley ratio in excess of 1000:1 at low temperature.

Tunable Negative Differential Resistance in van der Waals Heterostructures at Room Temperature by Tailoring the Interface

ACS Nano ◽  
2019 ◽  
Vol 13 (7) ◽  
pp. 8193-8201 ◽  
Author(s):  
Sidi Fan ◽  
Quoc An Vu ◽  
Sanghyub Lee ◽  
Thanh Luan Phan ◽  
Gyeongtak Han ◽  
...  
Keyword(s):  
Negative Differential Resistance ◽  
Room Temperature ◽  
Van Der Waals ◽  
Differential Resistance ◽  
Van Der Waals Heterostructures

Room temperature negative differential resistance in molecular nanowires

2002 ◽  
Vol 12 (10) ◽  
pp. 2927-2930 ◽  
Author(s):  
Irena Kratochvilova ◽  
Milan Kocirik ◽  
Adriana Zambova ◽  
Jeremiah Mbindyo ◽  
Thomas E. Mallouk ◽  
...  
Keyword(s):  
Negative Differential Resistance ◽  
Room Temperature ◽  
Differential Resistance
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