Room Temperature Negative Differential Resistance in Nanoscale Molecular

1999 ◽  
Vol 582 ◽  
Author(s):  
J. Chen ◽  
W. Wang ◽  
M. A. Reed ◽  
A. M. Rawlett ◽  
D. W. Price ◽  
...  
Keyword(s):  
Low Temperature ◽  
Negative Differential Resistance ◽  
Room Temperature ◽  
Active Component ◽  
Differential Resistance ◽  
Molecular Devices ◽  
Self Assembled Monolayer ◽  
Redox Center ◽  
Current Voltage ◽  
Peak To Valley Ratio

ABSTRACTMolecular devices utilizing active self-assembled monolayer (SAM) (containing nitroamine (2′-amino-4-ethynylphenyl-4′-ethynylphenyl-5′-nitro-1-benzenethiolate) and nitro (4-ethynylphenyl-4′-ethynylphenyl-2′-nitro-1-benzenethiolate) redox center) as the active component are reported. Current-voltage measurements of the devices exhibited negative differential resistance at room temperature and an on-off peak-to-valley ratio in excess of 1000:1 at low temperature.

Effects of different tailoring graphene electrodes on the rectification and negative differential resistance of molecular devices

2018 ◽  
Vol 32 (29) ◽  
pp. 1850323
Author(s):  
Ting Ting Zhang ◽  
Cai Juan Xia ◽  
Bo Qun Zhang ◽  
Xiao Feng Lu ◽  
Yang Liu ◽  
...  
Keyword(s):  
Electronic Transport ◽  
Negative Differential Resistance ◽  
Density Functional ◽  
Graphene Nanoribbons ◽  
Differential Resistance ◽  
Voltage Characteristic ◽  
Molecular Devices ◽  
Current Voltage Characteristic ◽  
Functional Theory ◽  
Current Voltage

The electronic transport properties of oligo p-phenylenevinylene (OPV) molecule sandwiched with symmetrical or asymmetric tailoring graphene nanoribbons (GNRs) electrodes are investigated by nonequilibrium Green’s function in combination with density functional theory. The results show that different tailored GNRs electrodes can modulate the current–voltage characteristic of molecular devices. The rectifying behavior can be observed with respect to electrodes, and the maximum rectification ratio can reach to 14.2 in the asymmetric AC–ZZ GNRs and ZZ–AC–ZZ GNRs electrodes system. In addition, the obvious negative differential resistance can be observed in the symmetrical AC-ZZ GNRs system.

scholarly journals Negative Differential Resistance Behavior in Delta-Doped AlInP Structure Grown by MOCVD

2002 ◽  
Vol 25 (3) ◽  
pp. 245-248
Author(s):  
K. F. Yarn
Keyword(s):  
Schottky Diode ◽  
Negative Differential Resistance ◽  
Room Temperature ◽  
Thermionic Emission ◽  
Differential Resistance ◽  
Tunneling Effect ◽  
Peak Current Density ◽  
Interband Tunneling ◽  
First Time ◽  
Peak To Valley Ratio

An AlInP delta-doped schottky diode exhibiting negative differential resistance (NDR) behavior is demonstrated for the first time. The NDR characteristics with a peak to valley ratio of 5.5 and peak current density of1KA/cm2were achieved at room temperature. In addition, the maximum available power is estimated up to5W/cm2. The mechanism for such performance is phenomenologically analyzed by the combination of resonant interband tunneling (RIT) and thermionic emission processes associated with tunneling effect on the metal-semiconductor (MS) interface.

Tuning the electronic and quantum transport properties of nitrogenated holey graphene nanoribbons

2017 ◽  
Vol 5 (45) ◽  
pp. 11856-11866 ◽  
Author(s):  
Aldilene Saraiva-Souza ◽  
Manuel Smeu ◽  
José Gadelha da Silva Filho ◽  
Eduardo Costa Girão ◽  
Hong Guo
Keyword(s):  
Transport Properties ◽  
Quantum Transport ◽  
Negative Differential Resistance ◽  
Graphene Nanoribbons ◽  
Differential Resistance ◽  
Linear Current ◽  
Current Voltage ◽  
Non Linear ◽  
Current Voltage Characteristics ◽  
Peak To Valley Ratio

Strong negative differential resistance (NDR) behavior with a remarkable current peak-to-valley ratio for armchair C2N-hNRs and non-linear current–voltage characteristics for zigzag C2N-hNRs.

scholarly journals Stable negative differential resistance in porphyrin based σ–π–σ monolayers grafted on silicon

RSC Advances ◽  
2015 ◽  
Vol 5 (62) ◽  
pp. 50234-50244 ◽  
Author(s):  
Kavita Garg ◽  
Chiranjib Majumder ◽  
Shiv Kumar Gupta ◽  
Dinesh Kumar Aswal ◽  
Sandip Kumar Nayak ◽  
...  
Keyword(s):  
Negative Differential Resistance ◽  
Room Temperature ◽  
Differential Resistance ◽  
Porphyrin Moiety ◽  
Peak To Valley Ratio

Two Si–porphyrin hybrid monolayers showed room temperature negative differential resistance (NDR) property. The monolayer with a fluorophenyl porphyrin moiety showed a better peak-to-valley ratio due to compact packing.

Effect of length and negative differential resistance behavior in conjugated molecular wire tetrathiafulvalene devices

2015 ◽  
Vol 29 (20) ◽  
pp. 1550106 ◽  
Author(s):  
Xiaojiao Zhang ◽  
Keqiu Chen ◽  
Mengqiu Long ◽  
Jun He ◽  
Yongli Gao
Keyword(s):  
Electronic Transport ◽  
Negative Differential Resistance ◽  
Density Functional ◽  
Differential Resistance ◽  
Molecular Devices ◽  
Molecular Wire ◽  
Length Effect ◽  
Functional Theory ◽  
Current Voltage ◽  
The Density Functional Theory

The electronic transport properties of molecular devices constructed by conjugated molecular wire tetrathiafulvalene (TTF) have been studied by applying nonequilibrium Green’s functions in combination with the density-functional theory. Two molecular junctions with different wire lengths have been considered. The results show that the current–voltage curves of TTF devices can be modulated by the length of the molecular wire and negative differential resistance behaviors are observed in these systems. The mechanisms have been proposed for the length effect and negative differential resistance behavior.

Room temperature negative differential resistance in DNA-based molecular devices

2009 ◽  
Vol 94 (4) ◽  
pp. 043105 ◽  
Author(s):  
Peng-Chung Jangjian ◽  
Tzeng-Feng Liu ◽  
Mei-Yi Li ◽  
Ming-Shih Tsai ◽  
Chia-Ching Chang
Keyword(s):  
Negative Differential Resistance ◽  
Room Temperature ◽  
Differential Resistance ◽  
Molecular Devices

Experimental Studies of New GaAs Metal/Insulator/p-n+Switches Using Low Temperature Oxide

2002 ◽  
Vol 25 (3) ◽  
pp. 233-237
Author(s):  
K. F. Yarn
Keyword(s):  
Low Temperature ◽  
Negative Differential Resistance ◽  
Doping Concentration ◽  
Experimental Studies ◽  
Differential Resistance ◽  
Switching Behavior ◽  
Metal Insulator ◽  
Turn On ◽  
Temperature Oxide ◽  
Phase Chemical

First observation of switching behavior is reported in GaAs metal-insulator-p-n+structure, where the thin insulator is grown at low temperature by a liquid phase chemical-enhanced oxide (LPECO) with a thickness of 100 Å. A significant S-shaped negative differential resistance (NDR) is shown to occur that originates from the regenerative feedback in a tunnel metal/insulator/semiconductor (MIS) interface andp-n+junction. The influence of epitaxial doping concentration on the switching and holding voltages is investigated. The switching voltages are found to be decreased when increasing the epitaxial doping concentration, while the holding voltages are almost kept constant. A high turn-off/turn-on resistance ratio up to105has been obtained.

Molecular Scale Electronics

1999 ◽  
Vol 582 ◽  
Author(s):  
A. M. Rawlett ◽  
E. T. Mickelson ◽  
W. A. Reinerth ◽  
L. Jones ◽  
M. Kozaki ◽  
...  
Keyword(s):  
Negative Differential Resistance ◽  
Electronic Devices ◽  
Differential Resistance ◽  
Conjugated Oligomers ◽  
Molecular Electronic ◽  
Self Assembled Monolayer ◽  
Monolayer Formation ◽  
Molecular Scale ◽  
Rigid Rod ◽  
Design And Testing

ABSTRACTThis paper reports on some of the recent advances in the development and testing of molecular-scale electronic devices, devices that may ultimately be the basis of a molecular-based computer. These advances include: the synthesis of molecules which will perform specific electronic functions, self-assembled monolayer formation of rigid-rod conjugated oligomers, novel methodologies for the design and testing of molecular electronic devices, and the observance of negative differential resistance (NDR) through a molecule.

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