Solution-processed SiO2 gate insulator formed at low temperature for zinc oxide thin-film transistors
Keyword(s):
A ZnO transistor with carrier mobility of 3 cm2 V−1 s−1 using a SiO2 insulator formed at low-temperature (180 °C) from solution-processed perhydropolysilazane.
Keyword(s):
2016 ◽
Vol 8
(3)
◽
pp. 2061-2070
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Keyword(s):
Solution-Processed Zinc Oxide Thin-Film Transistors With a Low-Temperature Polymer Passivation Layer
2012 ◽
Vol 33
(10)
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pp. 1420-1422
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Keyword(s):
Keyword(s):
2016 ◽
Vol 16
(8)
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pp. 8692-8695
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2016 ◽
Vol 16
(12)
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pp. 12871-12874
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Keyword(s):
2014 ◽
Vol 53
(4S)
◽
pp. 04EF07
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2014 ◽
Vol 43
(11)
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pp. 4241-4245
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Keyword(s):
2019 ◽
Vol 37
(3)
◽
pp. 032201