scholarly journals Solution-processed SiO2 gate insulator formed at low temperature for zinc oxide thin-film transistors

RSC Advances ◽  
2015 ◽  
Vol 5 (45) ◽  
pp. 36083-36087 ◽  
Author(s):  
Yesul Jeong ◽  
Christopher Pearson ◽  
Hyun-Gwan Kim ◽  
Man-Young Park ◽  
Hongdoo Kim ◽  
...  

A ZnO transistor with carrier mobility of 3 cm2 V−1 s−1 using a SiO2 insulator formed at low-temperature (180 °C) from solution-processed perhydropolysilazane.

2017 ◽  
Vol 641 ◽  
pp. 19-23 ◽  
Author(s):  
Soo-Yeun Han ◽  
Manh-Cuong Nguyen ◽  
An Hoang Thuy Nguyen ◽  
Jae- Won Choi ◽  
Jung-Youn Kim ◽  
...  

2016 ◽  
Vol 8 (3) ◽  
pp. 2061-2070 ◽  
Author(s):  
Yesul Jeong ◽  
Christopher Pearson ◽  
Hyun-Gwan Kim ◽  
Man-Young Park ◽  
Hongdoo Kim ◽  
...  

2012 ◽  
Vol 33 (10) ◽  
pp. 1420-1422 ◽  
Author(s):  
Xiaoli Xu ◽  
Linrun Feng ◽  
Shasha He ◽  
Yizheng Jin ◽  
Xiaojun Guo

2014 ◽  
Vol 43 (11) ◽  
pp. 4241-4245 ◽  
Author(s):  
Yesul Jeong ◽  
Christopher Pearson ◽  
Yong Uk Lee ◽  
Lee Winchester ◽  
Jaeeun Hwang ◽  
...  

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