scholarly journals Optimization of a Solution-Processed SiO2 Gate Insulator by Plasma Treatment for Zinc Oxide Thin Film Transistors

2016 ◽  
Vol 8 (3) ◽  
pp. 2061-2070 ◽  
Author(s):  
Yesul Jeong ◽  
Christopher Pearson ◽  
Hyun-Gwan Kim ◽  
Man-Young Park ◽  
Hongdoo Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Plasma Treatment ◽  
Thin Film Transistors ◽  
Gate Insulator ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Solution Processed

scholarly journals Solution-processed SiO2 gate insulator formed at low temperature for zinc oxide thin-film transistors

RSC Advances ◽  
2015 ◽  
Vol 5 (45) ◽  
pp. 36083-36087 ◽  
Author(s):  
Yesul Jeong ◽  
Christopher Pearson ◽  
Hyun-Gwan Kim ◽  
Man-Young Park ◽  
Hongdoo Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Carrier Mobility ◽  
Gate Insulator ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Solution Processed

A ZnO transistor with carrier mobility of 3 cm2 V−1 s−1 using a SiO2 insulator formed at low-temperature (180 °C) from solution-processed perhydropolysilazane.

Zinc oxide thin film transistors using MgO–Bi1.5Zn1.0Nb1.5O7 composite gate insulator on glass substrate

2010 ◽  
Vol 518 (10) ◽  
pp. 2843-2846 ◽  
Author(s):  
Nam Gyu Cho ◽  
Dong Hun Kim ◽  
Ho-Gi Kim ◽  
Jae-Min Hong ◽  
Il-Doo Kim
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Glass Substrate ◽  
Thin Film Transistors ◽  
Gate Insulator ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film

Solution-processed indium-zinc-oxide thin-film transistors based on anodized aluminum oxide gate insulator modified with zirconium oxide

RSC Advances ◽  
2015 ◽  
Vol 5 (63) ◽  
pp. 51440-51445 ◽  
Author(s):  
Yuzhi Li ◽  
Linfeng Lan ◽  
Peng Xiao ◽  
Zhenguo Lin ◽  
Sheng Sun ◽  
...  
Keyword(s):  
Thin Film ◽  
Zirconium Oxide ◽  
Thin Film Transistors ◽  
Gate Insulator ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Anodized Aluminum ◽  
Anodized Aluminum Oxide ◽  
Solution Processed ◽  
Indium Zinc Oxide

Enhanced performance of solution-processed IZO-TFTs with ZrOx interlayer due to Al diffusion suppression.

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