scholarly journals Effects of helium annealing in low-temperature and solution-processed amorphous indium-gallium-zinc-oxide thin-film transistors

AIP Advances ◽  
2019 ◽  
Vol 9 (4) ◽  
pp. 045228 ◽  
Author(s):  
Jeongmin Kim ◽  
Ikjun Jang ◽  
Jaewook Jeong
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Zinc Oxide Thin Film ◽  
Solution Processed ◽  
Indium Gallium

scholarly journals Correction: A selectively processible instant glue passivation layer for indium gallium zinc oxide thin-film transistors fabricated at low temperature

2018 ◽  
Vol 6 (38) ◽  
pp. 10376-10376
Author(s):  
Hyukjoon Yoo ◽  
Young Jun Tak ◽  
Won-Gi Kim ◽  
Yeong-gyu Kim ◽  
Hyun Jae Kim
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Passivation Layer ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Zinc Oxide Thin Film ◽  
Indium Gallium

Correction for ‘A selectively processible instant glue passivation layer for indium gallium zinc oxide thin-film transistors fabricated at low temperature’ by Hyukjoon Yoo et al., J. Mater. Chem. C, 2018, 6, 6187–6193.

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