scholarly journals Laser fabrication of crystalline silicon nanoresonators from an amorphous film for low-loss all-dielectric nanophotonics

Nanoscale ◽  
2016 ◽  
Vol 8 (9) ◽  
pp. 5043-5048 ◽  
Author(s):  
P. A. Dmitriev ◽  
S. V. Makarov ◽  
V. A. Milichko ◽  
I. S. Mukhin ◽  
A. S. Gudovskikh ◽  
...  
Keyword(s):  
Crystalline Silicon ◽  
Amorphous Film ◽  
Low Loss ◽  
Laser Fabrication

scholarly journals Ultrafast laser fabrication of low-loss waveguides in chalcogenide glass with 065  dB/cm loss

2012 ◽  
Vol 37 (9) ◽  
pp. 1418 ◽  
Author(s):  
Ben McMillen ◽  
Botao Zhang ◽  
Kevin P. Chen ◽  
Antonio Benayas ◽  
Daniel Jaque
Keyword(s):  
Chalcogenide Glass ◽  
Ultrafast Laser ◽  
Low Loss ◽  
Laser Fabrication

Carrier Transport and Photogeneration in Amorphous Silicon / Crystalline Silicon Heterojunctions with i/n and p/n Interfaces

2000 ◽  
Vol 609 ◽  
Author(s):  
Yu. Vygranenko ◽  
M. Fernandes ◽  
C. Nunes Carvalho ◽  
G. Lavareda ◽  
P. Louro ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Carrier Transport ◽  
Crystalline Silicon ◽  
Collection Efficiency ◽  
Spectral Response ◽  
Chemical Vapour ◽  
Amorphous Film ◽  
Amorphous Layer ◽  
Hydrogen Treatment ◽  
Internal Gain

ABSTRACTAmorphous hydrogenated silicon films deposited by Plasma Enhanced Chemical Vapour Deposition (PE-CVD) using standard rf-glow discharge at 13.56 MHz were used to produce amorphous silicon heterostructures. Junction properties were studied from current-voltage (IV), capacitance-voltage (C-V) and spectral response measurements. The photosensitivity of these structures was investigated for different amorphous film thicknesses and different applied bias voltages. It was shown that the output device characteristics could be improved by plasma hydrogen treatment before the deposition of the amorphous layer. The results show that ITO/a-Si:H/c-Si structures present high internal gain in the visible infra-red region and high collection efficiency in the blue range. They can be used as visible/near-IR photodiodes or for current amplifications proposes.

Mechanical Spectroscopy of Silicon as a Low Loss Material for High Precision Mechanical and Optical Experiments

2012 ◽  
Vol 184 ◽  
pp. 443-448 ◽  
Author(s):  
C. Schwarz ◽  
D. Heinert ◽  
K. Haughian ◽  
G. Hofmann ◽  
J. Komma ◽  
...  
Keyword(s):  
Low Temperatures ◽  
Crystalline Silicon ◽  
Bulk Sample ◽  
Mechanical Spectroscopy ◽  
Low Loss ◽  
Mechanical Loss ◽  
Element Analysis ◽  
Silicon Bulk ◽  
Orientation Dependency ◽  
Elastic Loss

The paper summarises systematic studies of the mechanical loss of crystalline silicon at low temperatures from 300 to 5 K. Thermo-elastic loss is discussed as a main contribution in thin samples. A numerical method based on a finite element analysis is presented to determine the thermo-elastic loss of arbitrarily shaped samples. Additionally, mechanical loss associated with oxygen is investigated in Czochralski grown silicon bulk samples. The process has the activation energy of about 168 meV. An orientation dependency of the loss is observed. The lowest loss reported in this paper was achieved with a cylindrical bulk sample having a diameter of 110 mm and a length of 200 mm at around 5 K and a resonant frequency of about 22.3 kHz.

Seed-Induced Crystallization of Amorphous Silicon for the Formation of Large-Grain Poly-Crystalline Silicon

2010 ◽  
Author(s):  
Jason Trask ◽  
Lin Cui ◽  
Andrew J. Wagner ◽  
K. Andre Mkhoyan ◽  
Uwe Kortshagen
Keyword(s):  
Amorphous Silicon ◽  
Crystalline Silicon ◽  
Amorphous Film ◽  
Average Crystallite Size ◽  
Dark Conductivity ◽  
Film Deposition ◽  
Grain Structure ◽  
Crystallization Time ◽  
Silicon Thin Films ◽  
Initial Seed

A new method for reducing crystallization time of hydrogenated amorphous silicon thin films and more successfully controlling grain structure has been studied through seeding of the bulk matrix with nanocrystallites during film deposition. Films were deposited by a system in which crystallites and amorphous film were synthesized in separate RF-powered plasmas. Average crystallite size was confirmed to be 20 to 50 nm via TEM imaging. Several films with various initial crystallite population densities were produced, and their crystallization kinetics were studied via Raman spectroscopy throughout a staged annealing process. Seeded films consistently displayed a characteristic crystallization time less than the incubation time of unseeded control films. Furthermore, films with larger initial seed densities exhibited earlier crystallization onset. A separate study also was performed in which the dark conductivity was compared between films re-crystallized from various initial seed densities.

Photocarrier Radiometric Lifetime Measurements of Intrinsic Amorphous-Crystalline Silicon Heterostructure

2006 ◽  
Vol 910 ◽  
Author(s):  
Keith R Leong ◽  
Andreas Mandelis ◽  
Nazir P Kherani ◽  
Stefan Zukotynski
Keyword(s):  
Silicon Surface ◽  
Surface Passivation ◽  
Crystalline Silicon ◽  
Amorphous Film ◽  
Surface Cleaning ◽  
Native Oxide ◽  
Transport Parameters ◽  
Lifetime Measurements ◽  
Dc Saddle Field ◽  
Silicon Heterostructures

AbstractIntrinsic hydrogenated amorphous silicon films were deposited by the DC saddle field system on crystalline silicon wafers. The substrate temperature of the amorphous film, crystalline silicon surface cleaning schemes, and the native oxide etchant were varied. The transport parameters of the amorphous-crystalline silicon heterostructures were evaluated by Photocarrier Radiometric (PCR) lifetime measurements. PCR bulk lifetime estimates were obtained using the quinhydrone in methanol solution to passivate the crystalline silicon surface. We present the effectiveness of the PCR system in evaluating different surface passivation schemes.

Photoinitiator-free laser fabrication of ultra-compact, low-loss waveguides in polydimethylsiloxane

2018 ◽  
Author(s):  
Ye Pu ◽  
Giulia Panusa ◽  
Jieping Wang ◽  
Demetri Psaltis ◽  
Christophe Moser
Keyword(s):  
Low Loss ◽  
Laser Fabrication

In situ crystallization of amorphous silicon

1992 ◽  
Vol 50 (2) ◽  
pp. 1346-1347
Author(s):  
J.L. Batstone
Keyword(s):  
Phase Transformation ◽  
Amorphous Silicon ◽  
Crystalline Silicon ◽  
Amorphous Film ◽  
State Transformation ◽  
Solid State Transformation ◽  
Plan View ◽  
The Difference ◽  
Si Films

The solid state transformation of amorphous silicon (a-Si) to crystalline silicon (c-Si) is a first order phase transformation which is driven by the difference in free energy between the amorphous and crystalline phases. The crystallization occurs at temperatures of 500-700°C which are readily accessible with commercial specimen heating stages for the transmission electron microscope (TEM). In this paper we study the a-c phase transformation dynamically by utilizing the powerful technique of in-situ TEM to monitor the nucleation and growth kinetics of thin films of Si. The propagation of a moving a-c interface is presented and an activation energy for crystal growth is obtained.400Å of a-Si was prepared by electron beam deposition of Si at room temperature on amorphous Si3,N4 “window” substrates which required no additional sample preparation for TEM. The samples were examined in a plan view orientation to minimize surface effects on the crystallization process. The a-Si films were annealed by in-situ heating in a Gatan single-tilt hot stage which has a temperature accuracy of ±25°C. Crystallization occurred at ∼700°C with the formation of small crystallites which grew to consume the entire amorphous film. Fig. 1 shows a partially transformed region of a-Si after annealing at 710°C for 6 mins.

Low-Loss Images in a Stem/Tem Microscope

1976 ◽  
Vol 34 ◽  
pp. 496-497 ◽  
Author(s):  
David C. Joy ◽  
Dennis M. Maher
Keyword(s):  
High Resolution ◽  
Surface Topography ◽  
Beam Direction ◽  
Low Loss ◽  
Specimen Holder ◽  
Glancing Angle ◽  
High Resolution Images ◽  
Set Up ◽  
Conventional Manner ◽  
Objective Type

High-resolution images of the surface topography of solid specimens can be obtained using the low-loss technique of Wells. If the specimen is placed inside a lens of the condenser/objective type, then it has been shown that the lens itself can be used to collect and filter the low-loss electrons. Since the probeforming lenses in TEM instruments fitted with scanning attachments are of this type, low-loss imaging should be possible.High-resolution, low-loss images have been obtained in a JEOL JEM 100B fitted with a scanning attachment and a thermal, fieldemission gun. No modifications were made to the instrument, but a wedge-shaped, specimen holder was made to fit the side-entry, goniometer stage. Thus the specimen is oriented initially at a glancing angle of about 30° to the beam direction. The instrument is set up in the conventional manner for STEM operation with all the lenses, including the projector, excited.

Edge Penetration Effects in the Low-Loss Electron Image in the SEM

1988 ◽  
Vol 46 ◽  
pp. 202-203
Author(s):  
Oliver C. Wells
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Beam Energy ◽  
Secondary Electron ◽  
Sharp Edge ◽  
Beam Diameter ◽  
Low Loss ◽  
Additional Information ◽  
Electron Image ◽  
Scanning Electron

The low-loss electron (LLE) image in the scanning electron microscope (SEM) is useful for the study of uncoated photoresist and some other poorly conducting specimens because it is less sensitive to specimen charging than is the secondary electron (SE) image. A second advantage can arise from a significant reduction in the width of the “penetration fringe” close to a sharp edge. Although both of these problems can also be solved by operating with a beam energy of about 1 keV, the LLE image has the advantage that it permits the use of a higher beam energy and therefore (for a given SEM) a smaller beam diameter. It is an additional attraction of the LLE image that it can be obtained simultaneously with the SE image, and this gives additional information in many cases. This paper shows the reduction in penetration effects given by the use of the LLE image.

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